JP2000039727A5 - - Google Patents
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- Publication number
- JP2000039727A5 JP2000039727A5 JP1999197523A JP19752399A JP2000039727A5 JP 2000039727 A5 JP2000039727 A5 JP 2000039727A5 JP 1999197523 A JP1999197523 A JP 1999197523A JP 19752399 A JP19752399 A JP 19752399A JP 2000039727 A5 JP2000039727 A5 JP 2000039727A5
- Authority
- JP
- Japan
- Prior art keywords
- weight
- stripper composition
- compound
- photoresist according
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- -1 sulfoxide compound Chemical class 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 5
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980027782A KR100288769B1 (ko) | 1998-07-10 | 1998-07-10 | 포토레지스트용스트리퍼조성물 |
| KR1998P27782 | 1998-07-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000039727A JP2000039727A (ja) | 2000-02-08 |
| JP2000039727A5 true JP2000039727A5 (enExample) | 2006-08-24 |
| JP4358935B2 JP4358935B2 (ja) | 2009-11-04 |
Family
ID=19543684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19752399A Expired - Fee Related JP4358935B2 (ja) | 1998-07-10 | 1999-07-12 | フォトレジスト用ストリッパー組成物 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6211127B1 (enExample) |
| JP (1) | JP4358935B2 (enExample) |
| KR (1) | KR100288769B1 (enExample) |
| TW (1) | TW439013B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4224651B2 (ja) * | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
| JP2000284506A (ja) * | 1999-03-31 | 2000-10-13 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
| US6506684B1 (en) * | 2000-05-24 | 2003-01-14 | Lsi Logic Corporation | Anti-corrosion system |
| KR100363271B1 (ko) * | 2000-06-12 | 2002-12-05 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
| KR20010113396A (ko) * | 2000-06-19 | 2001-12-28 | 주식회사 동진쎄미켐 | 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물 |
| KR100779037B1 (ko) * | 2001-09-26 | 2007-11-27 | 주식회사 동진쎄미켐 | 티에프티 엘시디용 칼라 레지스트 박리액 조성물 |
| KR100733197B1 (ko) * | 2001-12-18 | 2007-06-27 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
| KR100745892B1 (ko) * | 2001-12-14 | 2007-08-02 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
| KR100745891B1 (ko) * | 2001-12-14 | 2007-08-02 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
| CN100334508C (zh) * | 2003-01-10 | 2007-08-29 | 吉埈仍 | 光刻胶脱膜组成物及使用该组成物的模型形成方法 |
| KR100663624B1 (ko) * | 2004-04-29 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조방법 |
| KR101403515B1 (ko) * | 2006-06-22 | 2014-06-09 | 주식회사 동진쎄미켐 | 포토레지스트 제거용 조성물 |
| EP2247672B1 (en) * | 2008-02-29 | 2013-06-05 | Avantor Performance Materials, Inc. | Microelectronic substrate cleaning compositions |
| US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
| US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| JP6165442B2 (ja) * | 2009-07-30 | 2017-07-19 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 |
| US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
| EP4179056A2 (en) * | 2020-07-13 | 2023-05-17 | AdvanSix Resins & Chemicals LLC | Branched amino acid surfactants for electronics products |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4617251A (en) * | 1985-04-11 | 1986-10-14 | Olin Hunt Specialty Products, Inc. | Stripping composition and method of using the same |
| US5988186A (en) * | 1991-01-25 | 1999-11-23 | Ashland, Inc. | Aqueous stripping and cleaning compositions |
| US5480585A (en) * | 1992-04-02 | 1996-01-02 | Nagase Electronic Chemicals, Ltd. | Stripping liquid compositions |
| JP3761592B2 (ja) * | 1994-04-05 | 2006-03-29 | キャロル・タッチ・インターナショナル・リミテッド | 樹脂部材の結合構造 |
| US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
| US5567574A (en) * | 1995-01-10 | 1996-10-22 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for photoresist and method of removing |
| US5554312A (en) * | 1995-01-13 | 1996-09-10 | Ashland | Photoresist stripping composition |
| US5731243A (en) * | 1995-09-05 | 1998-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cleaning residue on a semiconductor wafer bonding pad |
| JP2911792B2 (ja) * | 1995-09-29 | 1999-06-23 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
-
1998
- 1998-07-10 KR KR1019980027782A patent/KR100288769B1/ko not_active Expired - Fee Related
-
1999
- 1999-03-26 TW TW088104832A patent/TW439013B/zh not_active IP Right Cessation
- 1999-06-11 US US09/330,206 patent/US6211127B1/en not_active Expired - Lifetime
- 1999-07-12 JP JP19752399A patent/JP4358935B2/ja not_active Expired - Fee Related
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