JP2000038573A5 - - Google Patents
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- Publication number
- JP2000038573A5 JP2000038573A5 JP1999115158A JP11515899A JP2000038573A5 JP 2000038573 A5 JP2000038573 A5 JP 2000038573A5 JP 1999115158 A JP1999115158 A JP 1999115158A JP 11515899 A JP11515899 A JP 11515899A JP 2000038573 A5 JP2000038573 A5 JP 2000038573A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- metal film
- semiconductor device
- slurry
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005498 polishing Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 9
- 239000002002 slurry Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11515899A JP2000038573A (ja) | 1998-05-19 | 1999-04-22 | 半導体装置用金属膜研磨スラリ― |
| US09/313,356 US6475407B2 (en) | 1998-05-19 | 1999-05-18 | Composition for polishing metal on semiconductor wafer and method of using same |
| TW088108083A TWI238849B (en) | 1998-05-19 | 1999-05-18 | Composition for polishing metal on semiconductor wafer and method of using same |
| KR1019990017816A KR100328308B1 (ko) | 1998-05-19 | 1999-05-18 | 반도체 웨이퍼 상의 금속을 연마하기 위한 조성물 및 그의 이용방법 |
| US09/672,776 US6770218B1 (en) | 1998-05-19 | 2000-09-29 | Composition for polishing metal on semiconductor wafer and method of using same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13693498 | 1998-05-19 | ||
| JP10-136934 | 1998-05-19 | ||
| JP11515899A JP2000038573A (ja) | 1998-05-19 | 1999-04-22 | 半導体装置用金属膜研磨スラリ― |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000038573A JP2000038573A (ja) | 2000-02-08 |
| JP2000038573A5 true JP2000038573A5 (enExample) | 2006-07-13 |
Family
ID=26453731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11515899A Withdrawn JP2000038573A (ja) | 1998-05-19 | 1999-04-22 | 半導体装置用金属膜研磨スラリ― |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2000038573A (enExample) |
| KR (1) | KR100328308B1 (enExample) |
| TW (1) | TWI238849B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4557105B2 (ja) * | 1999-05-28 | 2010-10-06 | 日産化学工業株式会社 | 研磨用組成物 |
| KR100799965B1 (ko) * | 2000-07-08 | 2008-02-01 | 에포크 머티리얼 컴퍼니, 리미티드 | 화학-기계적 연마제 조성물 및 연마 방법 |
| KR100535074B1 (ko) * | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정 |
| US20030003747A1 (en) * | 2001-06-29 | 2003-01-02 | Jae Hong Kim | Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same |
| KR100447975B1 (ko) * | 2001-12-28 | 2004-09-10 | 주식회사 하이닉스반도체 | 씨엠피용 슬러리, 그 제조방법 및 이를 이용한 씨엠피 처리방법 |
| KR100444308B1 (ko) | 2001-12-29 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
| KR100638317B1 (ko) * | 2004-07-28 | 2006-10-25 | 주식회사 케이씨텍 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
| KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
| EP2322322B2 (en) * | 2008-06-13 | 2022-10-05 | Fujimi Incorporated | Aluminum oxide particle and polishing composition containing the same |
| CN102869478A (zh) * | 2010-04-28 | 2013-01-09 | 日本百考基株式会社 | 蓝宝石研磨用浆液和蓝宝石的研磨方法 |
-
1999
- 1999-04-22 JP JP11515899A patent/JP2000038573A/ja not_active Withdrawn
- 1999-05-18 KR KR1019990017816A patent/KR100328308B1/ko not_active Expired - Fee Related
- 1999-05-18 TW TW088108083A patent/TWI238849B/zh not_active IP Right Cessation
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