JP2003503862A5 - - Google Patents

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Publication number
JP2003503862A5
JP2003503862A5 JP2001507608A JP2001507608A JP2003503862A5 JP 2003503862 A5 JP2003503862 A5 JP 2003503862A5 JP 2001507608 A JP2001507608 A JP 2001507608A JP 2001507608 A JP2001507608 A JP 2001507608A JP 2003503862 A5 JP2003503862 A5 JP 2003503862A5
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JP
Japan
Prior art keywords
slurry
particles
range
less
surface area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001507608A
Other languages
English (en)
Japanese (ja)
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JP2003503862A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2000/017046 external-priority patent/WO2001002134A1/en
Publication of JP2003503862A publication Critical patent/JP2003503862A/ja
Publication of JP2003503862A5 publication Critical patent/JP2003503862A5/ja
Pending legal-status Critical Current

Links

JP2001507608A 1999-07-03 2000-06-21 改良された金属用化学機械研磨スラリー Pending JP2003503862A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14232699P 1999-07-03 1999-07-03
US60/142,326 1999-07-03
PCT/US2000/017046 WO2001002134A1 (en) 1999-07-03 2000-06-21 Improved chemical mechanical polishing slurries for metal

Publications (2)

Publication Number Publication Date
JP2003503862A JP2003503862A (ja) 2003-01-28
JP2003503862A5 true JP2003503862A5 (enExample) 2005-08-04

Family

ID=22499420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001507608A Pending JP2003503862A (ja) 1999-07-03 2000-06-21 改良された金属用化学機械研磨スラリー

Country Status (6)

Country Link
US (1) US6447373B1 (enExample)
EP (1) EP1177068A4 (enExample)
JP (1) JP2003503862A (enExample)
KR (1) KR20020035826A (enExample)
TW (1) TW452523B (enExample)
WO (1) WO2001002134A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692546B2 (en) 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6821897B2 (en) 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7132058B2 (en) 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7578997B2 (en) 2002-04-30 2009-08-25 Kimberly-Clark Worldwide, Inc. Metal ion modified high surface area materials for odor removal and control
US7976855B2 (en) * 2002-04-30 2011-07-12 Kimberly-Clark Worldwide, Inc. Metal ion modified high surface area materials for odor removal and control
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
WO2004053456A2 (en) * 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
US7427361B2 (en) 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
US20060075075A1 (en) * 2004-10-01 2006-04-06 Malinen Jouni I Method and system to contextually initiate synchronization services on mobile terminals in an enterprise environment
DE102004055113A1 (de) * 2004-11-15 2006-05-18 Kissel & Wolf Gmbh Verfahren zur Hydrophilierung von Siebdruckschablonenträgern sowie Verfahren zur Entfernung von Schablonenmaterial von einem Siebdruckschablonenträger und Entschichtungsflüssigkeit hierfür
US7708904B2 (en) 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US8353740B2 (en) * 2005-09-09 2013-01-15 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
EP1943320B1 (en) * 2005-10-25 2009-04-15 Freescale Semiconductor, Inc. Method for testing a slurry used to form a semiconductor device
US7691287B2 (en) 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
KR101809762B1 (ko) 2009-11-13 2017-12-15 바스프 에스이 무기 입자 및 중합체 입자를 포함하는 화학적 기계적 연마 (ｃｍｐ) 조성물
US10287457B2 (en) * 2012-11-02 2019-05-14 Lawrence Livermore National Security, Llc Polishing slurry preventing agglomeration of charged colloids without loss of surface activity
US9358659B2 (en) 2013-03-04 2016-06-07 Cabot Microelectronics Corporation Composition and method for polishing glass
KR102261822B1 (ko) * 2019-05-23 2021-06-08 에스케이씨솔믹스 주식회사 결함 발생이 감소된 cmp 슬러리 조성물 및 이의 제조방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5078801A (en) * 1990-08-14 1992-01-07 Intel Corporation Post-polish cleaning of oxidized substrates by reverse colloidation
JP2832270B2 (ja) * 1993-05-18 1998-12-09 三井金属鉱業株式会社 ガラス研磨用研磨材
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5603739A (en) * 1995-06-09 1997-02-18 Diamond Scientific, Inc. Abrasive suspension system
DE69628947D1 (de) * 1995-10-20 2003-08-07 Minnesota Mining & Mfg Anorganische phosphate enthaltende schleifartikel
US5904159A (en) * 1995-11-10 1999-05-18 Tokuyama Corporation Polishing slurries and a process for the production thereof
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5773364A (en) 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US6110396A (en) 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
US6093649A (en) * 1998-08-07 2000-07-25 Rodel Holdings, Inc. Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto
TW419518B (en) * 1998-02-20 2001-01-21 Ind Tech Res Inst Non-Newtonian-fluid-behaviored formulation
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
US6162268A (en) * 1999-05-03 2000-12-19 Praxair S. T. Technology, Inc. Polishing slurry

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