JP2003503862A - 改良された金属用化学機械研磨スラリー - Google Patents
改良された金属用化学機械研磨スラリーInfo
- Publication number
- JP2003503862A JP2003503862A JP2001507608A JP2001507608A JP2003503862A JP 2003503862 A JP2003503862 A JP 2003503862A JP 2001507608 A JP2001507608 A JP 2001507608A JP 2001507608 A JP2001507608 A JP 2001507608A JP 2003503862 A JP2003503862 A JP 2003503862A
- Authority
- JP
- Japan
- Prior art keywords
- slurry
- particles
- polishing
- less
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 165
- 238000005498 polishing Methods 0.000 title claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 title claims abstract description 31
- 239000000126 substance Substances 0.000 title claims abstract description 16
- 150000002739 metals Chemical class 0.000 title claims description 8
- 239000002245 particle Substances 0.000 claims abstract description 181
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 230000002776 aggregation Effects 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 32
- 239000004094 surface-active agent Substances 0.000 claims description 24
- 238000005411 Van der Waals force Methods 0.000 claims description 23
- 238000005054 agglomeration Methods 0.000 claims description 23
- 239000012736 aqueous medium Substances 0.000 claims description 21
- 238000009826 distribution Methods 0.000 claims description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 230000001590 oxidative effect Effects 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000003068 static effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- -1 siloxanes Chemical class 0.000 claims description 5
- 230000002829 reductive effect Effects 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 2
- 150000002978 peroxides Chemical class 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- 150000004714 phosphonium salts Chemical class 0.000 claims description 2
- 159000000001 potassium salts Chemical class 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 239000002280 amphoteric surfactant Substances 0.000 claims 2
- 239000003945 anionic surfactant Substances 0.000 claims 2
- 239000003093 cationic surfactant Substances 0.000 claims 2
- 239000002736 nonionic surfactant Substances 0.000 claims 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical class [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- 150000002170 ethers Chemical class 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 125000005375 organosiloxane group Chemical group 0.000 claims 1
- 238000007415 particle size distribution analysis Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000003756 stirring Methods 0.000 abstract description 3
- 238000004220 aggregation Methods 0.000 description 24
- 150000004706 metal oxides Chemical class 0.000 description 19
- 238000004132 cross linking Methods 0.000 description 16
- 230000003993 interaction Effects 0.000 description 16
- 229910044991 metal oxide Inorganic materials 0.000 description 16
- 241000894007 species Species 0.000 description 9
- 238000005381 potential energy Methods 0.000 description 7
- 238000000527 sonication Methods 0.000 description 7
- 238000013019 agitation Methods 0.000 description 6
- 239000008139 complexing agent Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 229910021485 fumed silica Inorganic materials 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229920000867 polyelectrolyte Polymers 0.000 description 5
- 239000011164 primary particle Substances 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 229910001111 Fine metal Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001246 colloidal dispersion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005520 electrodynamics Effects 0.000 description 2
- 239000003995 emulsifying agent Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000002609 medium Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 230000005653 Brownian motion process Effects 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100130497 Drosophila melanogaster Mical gene Proteins 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 241001497337 Euscorpius gamma Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101100345589 Mus musculus Mical1 gene Proteins 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005537 brownian motion Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 150000007517 lewis acids Chemical group 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001141 propulsive effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14232699P | 1999-07-03 | 1999-07-03 | |
| US60/142,326 | 1999-07-03 | ||
| PCT/US2000/017046 WO2001002134A1 (en) | 1999-07-03 | 2000-06-21 | Improved chemical mechanical polishing slurries for metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003503862A true JP2003503862A (ja) | 2003-01-28 |
| JP2003503862A5 JP2003503862A5 (enExample) | 2005-08-04 |
Family
ID=22499420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001507608A Pending JP2003503862A (ja) | 1999-07-03 | 2000-06-21 | 改良された金属用化学機械研磨スラリー |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6447373B1 (enExample) |
| EP (1) | EP1177068A4 (enExample) |
| JP (1) | JP2003503862A (enExample) |
| KR (1) | KR20020035826A (enExample) |
| TW (1) | TW452523B (enExample) |
| WO (1) | WO2001002134A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013511144A (ja) * | 2009-11-13 | 2013-03-28 | ビーエーエスエフ ソシエタス・ヨーロピア | 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6692546B2 (en) | 2001-08-14 | 2004-02-17 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| US7029373B2 (en) | 2001-08-14 | 2006-04-18 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for metal and associated materials and method of using same |
| US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| US7132058B2 (en) | 2002-01-24 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tungsten polishing solution |
| US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US7578997B2 (en) * | 2002-04-30 | 2009-08-25 | Kimberly-Clark Worldwide, Inc. | Metal ion modified high surface area materials for odor removal and control |
| US7976855B2 (en) * | 2002-04-30 | 2011-07-12 | Kimberly-Clark Worldwide, Inc. | Metal ion modified high surface area materials for odor removal and control |
| US6936543B2 (en) * | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
| WO2004053456A2 (en) * | 2002-12-09 | 2004-06-24 | Corning Incorporated | Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials |
| US20050045852A1 (en) * | 2003-08-29 | 2005-03-03 | Ameen Joseph G. | Particle-free polishing fluid for nickel-based coating planarization |
| US7427361B2 (en) | 2003-10-10 | 2008-09-23 | Dupont Air Products Nanomaterials Llc | Particulate or particle-bound chelating agents |
| US20060075075A1 (en) * | 2004-10-01 | 2006-04-06 | Malinen Jouni I | Method and system to contextually initiate synchronization services on mobile terminals in an enterprise environment |
| DE102004055113A1 (de) * | 2004-11-15 | 2006-05-18 | Kissel & Wolf Gmbh | Verfahren zur Hydrophilierung von Siebdruckschablonenträgern sowie Verfahren zur Entfernung von Schablonenmaterial von einem Siebdruckschablonenträger und Entschichtungsflüssigkeit hierfür |
| US7708904B2 (en) | 2005-09-09 | 2010-05-04 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
| US8353740B2 (en) | 2005-09-09 | 2013-01-15 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
| EP1943320B1 (en) * | 2005-10-25 | 2009-04-15 | Freescale Semiconductor, Inc. | Method for testing a slurry used to form a semiconductor device |
| US7691287B2 (en) | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
| WO2014070461A1 (en) * | 2012-11-02 | 2014-05-08 | Lawrence Livermore National Security, Llc | Method for preventing agglomeration of charged colloids without loss of surface activity |
| US9358659B2 (en) | 2013-03-04 | 2016-06-07 | Cabot Microelectronics Corporation | Composition and method for polishing glass |
| KR102261822B1 (ko) * | 2019-05-23 | 2021-06-08 | 에스케이씨솔믹스 주식회사 | 결함 발생이 감소된 cmp 슬러리 조성물 및 이의 제조방법 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5078801A (en) * | 1990-08-14 | 1992-01-07 | Intel Corporation | Post-polish cleaning of oxidized substrates by reverse colloidation |
| JP2832270B2 (ja) * | 1993-05-18 | 1998-12-09 | 三井金属鉱業株式会社 | ガラス研磨用研磨材 |
| US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5603739A (en) | 1995-06-09 | 1997-02-18 | Diamond Scientific, Inc. | Abrasive suspension system |
| EP0961670B1 (en) * | 1995-10-20 | 2003-07-02 | Minnesota Mining And Manufacturing Company | Abrasive article containing an inorganic phosphate |
| EP0773270B1 (en) * | 1995-11-10 | 2001-01-24 | Tokuyama Corporation | Polishing slurries and a process for the production thereof |
| EP0786504A3 (en) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
| US5692950A (en) | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
| US5773364A (en) * | 1996-10-21 | 1998-06-30 | Motorola, Inc. | Method for using ammonium salt slurries for chemical mechanical polishing (CMP) |
| US6110396A (en) | 1996-11-27 | 2000-08-29 | International Business Machines Corporation | Dual-valent rare earth additives to polishing slurries |
| US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6022400A (en) * | 1997-05-22 | 2000-02-08 | Nippon Steel Corporation | Polishing abrasive grains, polishing agent and polishing method |
| US6093649A (en) * | 1998-08-07 | 2000-07-25 | Rodel Holdings, Inc. | Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto |
| TW419518B (en) | 1998-02-20 | 2001-01-21 | Ind Tech Res Inst | Non-Newtonian-fluid-behaviored formulation |
| US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
| US6270395B1 (en) * | 1998-09-24 | 2001-08-07 | Alliedsignal, Inc. | Oxidizing polishing slurries for low dielectric constant materials |
| US6162268A (en) * | 1999-05-03 | 2000-12-19 | Praxair S. T. Technology, Inc. | Polishing slurry |
-
2000
- 2000-06-21 EP EP00943003A patent/EP1177068A4/en not_active Withdrawn
- 2000-06-21 KR KR1020027000019A patent/KR20020035826A/ko not_active Withdrawn
- 2000-06-21 WO PCT/US2000/017046 patent/WO2001002134A1/en not_active Ceased
- 2000-06-21 JP JP2001507608A patent/JP2003503862A/ja active Pending
- 2000-06-21 US US09/598,377 patent/US6447373B1/en not_active Expired - Fee Related
- 2000-06-26 TW TW089112525A patent/TW452523B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013511144A (ja) * | 2009-11-13 | 2013-03-28 | ビーエーエスエフ ソシエタス・ヨーロピア | 無機粒子及びポリマー粒子を含む化学的機械研磨（ｃｍｐ）組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1177068A4 (en) | 2004-06-16 |
| WO2001002134A1 (en) | 2001-01-11 |
| EP1177068A1 (en) | 2002-02-06 |
| KR20020035826A (ko) | 2002-05-15 |
| US6447373B1 (en) | 2002-09-10 |
| TW452523B (en) | 2001-09-01 |
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