JP2000022105A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2000022105A
JP2000022105A JP10183692A JP18369298A JP2000022105A JP 2000022105 A JP2000022105 A JP 2000022105A JP 10183692 A JP10183692 A JP 10183692A JP 18369298 A JP18369298 A JP 18369298A JP 2000022105 A JP2000022105 A JP 2000022105A
Authority
JP
Japan
Prior art keywords
film
forming
dielectric
dielectric film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10183692A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000022105A5 (enExample
Inventor
Shinobu Takehiro
忍 竹廣
正樹 ▲吉▼丸
Masaki Yoshimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP10183692A priority Critical patent/JP2000022105A/ja
Priority to US09/291,306 priority patent/US6403441B1/en
Publication of JP2000022105A publication Critical patent/JP2000022105A/ja
Publication of JP2000022105A5 publication Critical patent/JP2000022105A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Semiconductor Memories (AREA)
JP10183692A 1998-06-30 1998-06-30 半導体装置の製造方法 Pending JP2000022105A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10183692A JP2000022105A (ja) 1998-06-30 1998-06-30 半導体装置の製造方法
US09/291,306 US6403441B1 (en) 1998-06-30 1999-04-15 Method for fabricating storage capacitor using high dielectric constant material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10183692A JP2000022105A (ja) 1998-06-30 1998-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2000022105A true JP2000022105A (ja) 2000-01-21
JP2000022105A5 JP2000022105A5 (enExample) 2005-09-29

Family

ID=16140279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10183692A Pending JP2000022105A (ja) 1998-06-30 1998-06-30 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6403441B1 (enExample)
JP (1) JP2000022105A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001066834A3 (en) * 2000-03-07 2002-02-28 Symetrix Corp Chemical vapor deposition process for fabricating layered superlattice materials
US6762090B2 (en) 2001-09-13 2004-07-13 Hynix Semiconductor Inc. Method for fabricating a capacitor
JP2007273892A (ja) * 2006-03-31 2007-10-18 Fujitsu Ltd 薄膜キャパシタおよびこれを有する半導体装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349255A (ja) * 1999-06-03 2000-12-15 Oki Electric Ind Co Ltd 半導体記憶装置およびその製造方法
KR100389913B1 (ko) * 1999-12-23 2003-07-04 삼성전자주식회사 공정조건을 변화시키면서 화학기상 증착법으로 루테늄막을형성하는 방법 및 그에 의해 형성된 루테늄막
US6617206B1 (en) * 2000-06-07 2003-09-09 Micron Technology, Inc. Method of forming a capacitor structure
KR100396879B1 (ko) * 2000-08-11 2003-09-02 삼성전자주식회사 동일 물질로 이루어진 이중막을 포함하는 다중막으로캡슐화된 캐패시터를 구비한 반도체 메모리 소자 및 그의제조 방법
KR100360413B1 (ko) * 2000-12-19 2002-11-13 삼성전자 주식회사 2단계 열처리에 의한 반도체 메모리 소자의 커패시터 제조방법
US6730575B2 (en) * 2001-08-30 2004-05-04 Micron Technology, Inc. Methods of forming perovskite-type material and capacitor dielectric having perovskite-type crystalline structure
US7211199B2 (en) * 2002-03-15 2007-05-01 The Trustees Of The University Of Pennsylvania Magnetically-and electrically-induced variable resistance materials and method for preparing same
KR102794032B1 (ko) 2019-12-13 2025-04-11 삼성전자주식회사 커패시터 구조물 및 이를 포함하는 반도체 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972059A (en) * 1973-12-28 1976-07-27 International Business Machines Corporation Dielectric diode, fabrication thereof, and charge store memory therewith
JP2658819B2 (ja) 1993-09-13 1997-09-30 日本電気株式会社 薄膜キャパシタ
JPH0982915A (ja) 1995-09-18 1997-03-28 Toshiba Corp 半導体装置の製造方法
US5612560A (en) * 1995-10-31 1997-03-18 Northern Telecom Limited Electrode structure for ferroelectric capacitors for integrated circuits
JPH09246490A (ja) 1996-03-11 1997-09-19 Toshiba Corp 半導体装置及びその製造方法
KR100215861B1 (ko) * 1996-03-13 1999-08-16 구본준 유전체 박막 제조방법 및 이를 이용한 반도체 장치제조방법
US5807774A (en) 1996-12-06 1998-09-15 Sharp Kabushiki Kaisha Simple method of fabricating ferroelectric capacitors
US6078072A (en) * 1997-10-01 2000-06-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitor
US6010744A (en) * 1997-12-23 2000-01-04 Advanced Technology Materials, Inc. Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001066834A3 (en) * 2000-03-07 2002-02-28 Symetrix Corp Chemical vapor deposition process for fabricating layered superlattice materials
US6762090B2 (en) 2001-09-13 2004-07-13 Hynix Semiconductor Inc. Method for fabricating a capacitor
JP2007273892A (ja) * 2006-03-31 2007-10-18 Fujitsu Ltd 薄膜キャパシタおよびこれを有する半導体装置

Also Published As

Publication number Publication date
US6403441B1 (en) 2002-06-11

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