ITTO20021119A1 - Dispositivo mos e procedimento di fabbricazione di - Google Patents
Dispositivo mos e procedimento di fabbricazione diInfo
- Publication number
- ITTO20021119A1 ITTO20021119A1 IT001119A ITTO20021119A ITTO20021119A1 IT TO20021119 A1 ITTO20021119 A1 IT TO20021119A1 IT 001119 A IT001119 A IT 001119A IT TO20021119 A ITTO20021119 A IT TO20021119A IT TO20021119 A1 ITTO20021119 A1 IT TO20021119A1
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing procedure
- mos device
- mos
- procedure
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT001119A ITTO20021119A1 (it) | 2002-12-24 | 2002-12-24 | Dispositivo mos e procedimento di fabbricazione di |
| EP03104939A EP1434257B1 (en) | 2002-12-24 | 2003-12-23 | Process for manufacturing MOS devices using dual-polysilicon layer technology |
| US10/745,295 US7023047B2 (en) | 2002-12-24 | 2003-12-23 | MOS device and process for manufacturing MOS devices using dual-polysilicon layer technology |
| DE60334188T DE60334188D1 (de) | 2002-12-24 | 2003-12-23 | Verfahren zur Herstellung von MOS Bauelementen mit Zweischicht Polysilizium Technik |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT001119A ITTO20021119A1 (it) | 2002-12-24 | 2002-12-24 | Dispositivo mos e procedimento di fabbricazione di |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITTO20021119A1 true ITTO20021119A1 (it) | 2004-06-25 |
Family
ID=32448952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT001119A ITTO20021119A1 (it) | 2002-12-24 | 2002-12-24 | Dispositivo mos e procedimento di fabbricazione di |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7023047B2 (it) |
| EP (1) | EP1434257B1 (it) |
| DE (1) | DE60334188D1 (it) |
| IT (1) | ITTO20021119A1 (it) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITTO20021118A1 (it) | 2002-12-24 | 2004-06-25 | St Microelectronics Srl | Dispositivo mos e procedimento di fabbricazione di |
| US7306552B2 (en) * | 2004-12-03 | 2007-12-11 | Samsung Electronics Co., Ltd. | Semiconductor device having load resistor and method of fabricating the same |
| CN102088001B (zh) * | 2009-12-04 | 2013-10-09 | 中芯国际集成电路制造(上海)有限公司 | 快闪存储器及其制作方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1213249B (it) * | 1984-11-26 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori. |
| KR940009644B1 (ko) | 1991-11-19 | 1994-10-15 | 삼성전자 주식회사 | 불휘발성 반도체메모리장치 및 그 제조방법 |
| JPH104149A (ja) * | 1996-06-14 | 1998-01-06 | Oki Electric Ind Co Ltd | 半導体記憶装置および製造方法 |
| JP4392867B2 (ja) | 1998-02-06 | 2010-01-06 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| EP0996162A1 (en) | 1998-10-21 | 2000-04-26 | STMicroelectronics S.r.l. | Low resistance contact structure for a select transistor of EEPROM memory cells |
| JP2000311992A (ja) | 1999-04-26 | 2000-11-07 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US6680514B1 (en) * | 2000-12-20 | 2004-01-20 | International Business Machines Corporation | Contact capping local interconnect |
-
2002
- 2002-12-24 IT IT001119A patent/ITTO20021119A1/it unknown
-
2003
- 2003-12-23 US US10/745,295 patent/US7023047B2/en not_active Expired - Lifetime
- 2003-12-23 EP EP03104939A patent/EP1434257B1/en not_active Expired - Lifetime
- 2003-12-23 DE DE60334188T patent/DE60334188D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE60334188D1 (de) | 2010-10-28 |
| EP1434257A3 (en) | 2004-12-15 |
| EP1434257A2 (en) | 2004-06-30 |
| US20040188759A1 (en) | 2004-09-30 |
| US7023047B2 (en) | 2006-04-04 |
| EP1434257B1 (en) | 2010-09-15 |
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