ITMI991857A0 - Diodo schottky con strato di contatto metallico di barriera accorciato - Google Patents

Diodo schottky con strato di contatto metallico di barriera accorciato

Info

Publication number
ITMI991857A0
ITMI991857A0 IT99MI001857A ITMI991857A ITMI991857A0 IT MI991857 A0 ITMI991857 A0 IT MI991857A0 IT 99MI001857 A IT99MI001857 A IT 99MI001857A IT MI991857 A ITMI991857 A IT MI991857A IT MI991857 A0 ITMI991857 A0 IT MI991857A0
Authority
IT
Italy
Prior art keywords
shortened
contact layer
schottky diode
metallic barrier
barrier contact
Prior art date
Application number
IT99MI001857A
Other languages
English (en)
Inventor
Davide Chiola
Kohji Andoh
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of ITMI991857A0 publication Critical patent/ITMI991857A0/it
Publication of ITMI991857A1 publication Critical patent/ITMI991857A1/it
Application granted granted Critical
Publication of IT1313289B1 publication Critical patent/IT1313289B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
IT1999MI001857A 1998-09-01 1999-08-31 Diodo schottky con strato di contatto metallico di barriera accorciato IT1313289B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14466998A 1998-09-01 1998-09-01

Publications (3)

Publication Number Publication Date
ITMI991857A0 true ITMI991857A0 (it) 1999-08-31
ITMI991857A1 ITMI991857A1 (it) 2001-03-03
IT1313289B1 IT1313289B1 (it) 2002-07-17

Family

ID=22509609

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI001857A IT1313289B1 (it) 1998-09-01 1999-08-31 Diodo schottky con strato di contatto metallico di barriera accorciato

Country Status (4)

Country Link
DE (1) DE19939484A1 (it)
FR (1) FR2785091A1 (it)
GB (1) GB2341276A (it)
IT (1) IT1313289B1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009018971A1 (de) * 2009-04-25 2010-11-04 Secos Halbleitertechnologie Gmbh Konstruktion einer Schottkydiode mit verbessertem Hochstromverhalten und Verfahren zu deren Herstellung
DE102009056603A1 (de) * 2009-12-02 2011-06-09 Eris Technology Corp. Verfahren zur Herstellung einer Schottkydiode mit verbessertem Hochstromverhalten
US9287165B2 (en) * 2013-06-26 2016-03-15 Infineon Technologies Ag Semiconductor device and method for producing the same
DE102016110203B4 (de) 2015-06-02 2019-11-21 Diotec Semiconductor Ag Verbesserte Halbleiteranordnung mit Schottky-Diode und Verfahren zu deren Herstellung
CN113314412A (zh) * 2021-06-24 2021-08-27 弘大芯源(深圳)半导体有限公司 一种制造肖特基二极管的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063964A (en) * 1976-12-27 1977-12-20 International Business Machines Corporation Method for forming a self-aligned schottky barrier device guardring
US4206540A (en) * 1978-06-02 1980-06-10 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier
NL8004573A (nl) * 1979-09-19 1981-03-23 Gen Electric Werkwijze voor het vervaardigen van samengestelde voorwerpen.
JPS5816576A (ja) * 1981-07-22 1983-01-31 Toshiba Corp 半導体装置及びその製造方法
JPS5835985A (ja) * 1981-08-28 1983-03-02 Fuji Electric Corp Res & Dev Ltd シヨツトキバリアダイオ−ドおよびその製造法
JPS58188158A (ja) * 1982-04-27 1983-11-02 Nec Corp 半導体装置とその製造方法
JPS59232467A (ja) * 1983-06-16 1984-12-27 Toshiba Corp ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド
US4899199A (en) * 1983-09-30 1990-02-06 International Rectifier Corporation Schottky diode with titanium or like layer contacting the dielectric layer
JPH10125936A (ja) * 1996-10-22 1998-05-15 Rohm Co Ltd ショットキーバリア半導体装置およびその製法

Also Published As

Publication number Publication date
GB9920553D0 (en) 1999-11-03
FR2785091A1 (fr) 2000-04-28
IT1313289B1 (it) 2002-07-17
DE19939484A1 (de) 2000-03-09
GB2341276A (en) 2000-03-08
ITMI991857A1 (it) 2001-03-03

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