ITMI922389A1 - Procedimento per la fabbricazione di un condensatore con una superficie di elettrodo rugosa - Google Patents
Procedimento per la fabbricazione di un condensatore con una superficie di elettrodo rugosaInfo
- Publication number
- ITMI922389A1 ITMI922389A1 IT002389A ITMI922389A ITMI922389A1 IT MI922389 A1 ITMI922389 A1 IT MI922389A1 IT 002389 A IT002389 A IT 002389A IT MI922389 A ITMI922389 A IT MI922389A IT MI922389 A1 ITMI922389 A1 IT MI922389A1
- Authority
- IT
- Italy
- Prior art keywords
- capacitor
- procedure
- manufacture
- electrode surface
- rough electrode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/014—Capacitor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/138—Roughened surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/964—Roughened surface
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3267979A JP2761685B2 (ja) | 1991-10-17 | 1991-10-17 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI922389A0 ITMI922389A0 (it) | 1992-10-16 |
ITMI922389A1 true ITMI922389A1 (it) | 1994-04-16 |
IT1256161B IT1256161B (it) | 1995-11-29 |
Family
ID=17452231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI922389A IT1256161B (it) | 1991-10-17 | 1992-10-16 | Procedimento per la fabbricazione di un condensatore con una superficie di elettrodo rugosa |
Country Status (5)
Country | Link |
---|---|
US (1) | US5318920A (it) |
JP (1) | JP2761685B2 (it) |
KR (1) | KR960005245B1 (it) |
DE (1) | DE4234676C2 (it) |
IT (1) | IT1256161B (it) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2769664B2 (ja) * | 1992-05-25 | 1998-06-25 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
JPH06151749A (ja) * | 1992-11-04 | 1994-05-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5411909A (en) * | 1993-02-22 | 1995-05-02 | Micron Technology, Inc. | Method of forming a planar thin film transistor |
US5278091A (en) * | 1993-05-04 | 1994-01-11 | Micron Semiconductor, Inc. | Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node |
US5656531A (en) * | 1993-12-10 | 1997-08-12 | Micron Technology, Inc. | Method to form hemi-spherical grain (HSG) silicon from amorphous silicon |
US5972771A (en) * | 1994-03-11 | 1999-10-26 | Micron Technology, Inc. | Enhancing semiconductor structure surface area using HSG and etching |
US5696014A (en) * | 1994-03-11 | 1997-12-09 | Micron Semiconductor, Inc. | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch |
US5478765A (en) * | 1994-05-04 | 1995-12-26 | Regents Of The University Of Texas System | Method of making an ultra thin dielectric for electronic devices |
JP2697645B2 (ja) * | 1994-10-31 | 1998-01-14 | 日本電気株式会社 | 半導体装置の製造方法 |
US6121081A (en) * | 1994-11-15 | 2000-09-19 | Micron Technology, Inc. | Method to form hemi-spherical grain (HSG) silicon |
US5583070A (en) * | 1995-07-07 | 1996-12-10 | Vanguard International Semiconductor Corporation | Process to form rugged polycrystalline silicon surfaces |
US5856007A (en) * | 1995-07-18 | 1999-01-05 | Sharan; Sujit | Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices |
US5801104A (en) * | 1995-10-24 | 1998-09-01 | Micron Technology, Inc. | Uniform dielectric film deposition on textured surfaces |
US5612558A (en) * | 1995-11-15 | 1997-03-18 | Micron Technology, Inc. | Hemispherical grained silicon on refractory metal nitride |
US6015986A (en) * | 1995-12-22 | 2000-01-18 | Micron Technology, Inc. | Rugged metal electrodes for metal-insulator-metal capacitors |
US6027970A (en) * | 1996-05-17 | 2000-02-22 | Micron Technology, Inc. | Method of increasing capacitance of memory cells incorporating hemispherical grained silicon |
CN1093568C (zh) * | 1996-05-23 | 2002-10-30 | 联华电子股份有限公司 | 半球型硅晶粒生长的方法 |
US5849624A (en) * | 1996-07-30 | 1998-12-15 | Mircon Technology, Inc. | Method of fabricating a bottom electrode with rounded corners for an integrated memory cell capacitor |
US5937314A (en) * | 1997-02-28 | 1999-08-10 | Micron Technology, Inc. | Diffusion-enhanced crystallization of amorphous materials to improve surface roughness |
US6069053A (en) | 1997-02-28 | 2000-05-30 | Micron Technology, Inc. | Formation of conductive rugged silicon |
US5920763A (en) * | 1997-08-21 | 1999-07-06 | Micron Technology, Inc. | Method and apparatus for improving the structural integrity of stacked capacitors |
US5917213A (en) * | 1997-08-21 | 1999-06-29 | Micron Technology, Inc. | Depletion compensated polysilicon electrodes |
US6048763A (en) | 1997-08-21 | 2000-04-11 | Micron Technology, Inc. | Integrated capacitor bottom electrode with etch stop layer |
TW385544B (en) * | 1998-03-02 | 2000-03-21 | Samsung Electronics Co Ltd | Apparatus for manufacturing semiconductor device, and method of manufacturing capacitor of semiconductor device thereby |
JP3630551B2 (ja) | 1998-04-02 | 2005-03-16 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
JP2000349175A (ja) * | 1999-06-03 | 2000-12-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
TW578214B (en) * | 2000-05-29 | 2004-03-01 | Tokyo Electron Ltd | Method of forming oxynitride film or the like and system for carrying out the same |
US6429127B1 (en) | 2000-06-08 | 2002-08-06 | Micron Technology, Inc. | Methods for forming rough ruthenium-containing layers and structures/methods using same |
US7253076B1 (en) | 2000-06-08 | 2007-08-07 | Micron Technologies, Inc. | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
US6482736B1 (en) * | 2000-06-08 | 2002-11-19 | Micron Technology, Inc. | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers |
US6750172B2 (en) * | 2001-03-14 | 2004-06-15 | Micron Technology, Inc. | Nanometer engineering of metal-support catalysts |
US6548348B1 (en) | 2001-06-18 | 2003-04-15 | Taiwan Semiconductor Manufacturing Company | Method of forming a storage node contact hole in a porous insulator layer |
US7448734B2 (en) * | 2004-01-21 | 2008-11-11 | Silverbrook Research Pty Ltd | Inkjet printer cartridge with pagewidth printhead |
US7817043B2 (en) * | 2004-11-30 | 2010-10-19 | Canon Kabushiki Kaisha | Radio frequency tag |
CN104089572B (zh) * | 2014-04-10 | 2016-12-07 | 北京大学 | 一种利用电容变化检测刻蚀侧壁粗糙的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2564316B2 (ja) * | 1987-08-10 | 1996-12-18 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
KR910005401B1 (ko) * | 1988-09-07 | 1991-07-29 | 경상현 | 비결정 실리콘을 이용한 자기정렬 트랜지스터 제조방법 |
US5043780A (en) * | 1990-01-03 | 1991-08-27 | Micron Technology, Inc. | DRAM cell having a texturized polysilicon lower capacitor plate for increased capacitance |
JP2937395B2 (ja) * | 1990-03-20 | 1999-08-23 | 日本電気株式会社 | 半導体素子 |
US5037773A (en) * | 1990-11-08 | 1991-08-06 | Micron Technology, Inc. | Stacked capacitor doping technique making use of rugged polysilicon |
US5135886A (en) * | 1990-12-06 | 1992-08-04 | At&T Bell Laboratories | Integrated circuit fabrication utilizing amorphous layers |
US5208479A (en) * | 1992-05-15 | 1993-05-04 | Micron Technology, Inc. | Method of increasing capacitance of polycrystalline silicon devices by surface roughening and polycrystalline silicon devices |
-
1991
- 1991-10-17 JP JP3267979A patent/JP2761685B2/ja not_active Expired - Fee Related
-
1992
- 1992-10-05 US US07/956,225 patent/US5318920A/en not_active Expired - Lifetime
- 1992-10-14 DE DE4234676A patent/DE4234676C2/de not_active Expired - Fee Related
- 1992-10-16 IT ITMI922389A patent/IT1256161B/it active IP Right Grant
- 1992-10-17 KR KR1019920019129A patent/KR960005245B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2761685B2 (ja) | 1998-06-04 |
US5318920A (en) | 1994-06-07 |
JPH05110014A (ja) | 1993-04-30 |
KR960005245B1 (ko) | 1996-04-23 |
ITMI922389A0 (it) | 1992-10-16 |
IT1256161B (it) | 1995-11-29 |
DE4234676A1 (de) | 1993-04-22 |
KR930009090A (ko) | 1993-05-22 |
DE4234676C2 (de) | 1994-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971030 |