ITMI20031045A0 - Procedimento per la definizione di aperture di dimensioni sub-litografiche in substrati di silicio - Google Patents

Procedimento per la definizione di aperture di dimensioni sub-litografiche in substrati di silicio

Info

Publication number
ITMI20031045A0
ITMI20031045A0 IT2003MI001045A ITMI20031045A ITMI20031045A0 IT MI20031045 A0 ITMI20031045 A0 IT MI20031045A0 IT 2003MI001045 A IT2003MI001045 A IT 2003MI001045A IT MI20031045 A ITMI20031045 A IT MI20031045A IT MI20031045 A0 ITMI20031045 A0 IT MI20031045A0
Authority
IT
Italy
Prior art keywords
definition
openings
sub
procedure
silicon substrates
Prior art date
Application number
IT2003MI001045A
Other languages
English (en)
Inventor
Marco Damasceni
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT001045A priority Critical patent/ITMI20031045A1/it
Publication of ITMI20031045A0 publication Critical patent/ITMI20031045A0/it
Priority to US10/851,756 priority patent/US20050014099A1/en
Publication of ITMI20031045A1 publication Critical patent/ITMI20031045A1/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IT001045A 2003-05-23 2003-05-23 Procedimento per la definizione di aperture di dimensioni sub-litografiche in substrati di silicio. ITMI20031045A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT001045A ITMI20031045A1 (it) 2003-05-23 2003-05-23 Procedimento per la definizione di aperture di dimensioni sub-litografiche in substrati di silicio.
US10/851,756 US20050014099A1 (en) 2003-05-23 2004-05-20 Method for providing apertures having sublithographic dimensions in silicon substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT001045A ITMI20031045A1 (it) 2003-05-23 2003-05-23 Procedimento per la definizione di aperture di dimensioni sub-litografiche in substrati di silicio.

Publications (2)

Publication Number Publication Date
ITMI20031045A0 true ITMI20031045A0 (it) 2003-05-23
ITMI20031045A1 ITMI20031045A1 (it) 2004-11-24

Family

ID=30131075

Family Applications (1)

Application Number Title Priority Date Filing Date
IT001045A ITMI20031045A1 (it) 2003-05-23 2003-05-23 Procedimento per la definizione di aperture di dimensioni sub-litografiche in substrati di silicio.

Country Status (2)

Country Link
US (1) US20050014099A1 (it)
IT (1) ITMI20031045A1 (it)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0338110B1 (en) * 1988-04-21 1993-03-17 International Business Machines Corporation Method for forming a photoresist pattern and apparatus applicable with said method
US5266445A (en) * 1991-10-31 1993-11-30 Intel Corporation Method of selectively irradiating a resist layer using radiation pulses
US5407785A (en) * 1992-12-18 1995-04-18 Vlsi Technology, Inc. Method for generating dense lines on a semiconductor wafer using phase-shifting and multiple exposures
US6670109B2 (en) * 2001-08-29 2003-12-30 Micron Technology, Inc. Photolithographic methods of using a single reticle to form overlapping patterns

Also Published As

Publication number Publication date
ITMI20031045A1 (it) 2004-11-24
US20050014099A1 (en) 2005-01-20

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