IT991964B - Canale di sovraccarico per disposi tivi di rappresentazione di imma gine a trasferimento di carica - Google Patents
Canale di sovraccarico per disposi tivi di rappresentazione di imma gine a trasferimento di caricaInfo
- Publication number
- IT991964B IT991964B IT51274/73A IT5127473A IT991964B IT 991964 B IT991964 B IT 991964B IT 51274/73 A IT51274/73 A IT 51274/73A IT 5127473 A IT5127473 A IT 5127473A IT 991964 B IT991964 B IT 991964B
- Authority
- IT
- Italy
- Prior art keywords
- charge transfer
- transfer image
- image representation
- overload channel
- representation devices
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27033872A | 1972-07-10 | 1972-07-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT991964B true IT991964B (it) | 1975-08-30 |
Family
ID=23030921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT51274/73A IT991964B (it) | 1972-07-10 | 1973-07-05 | Canale di sovraccarico per disposi tivi di rappresentazione di imma gine a trasferimento di carica |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5222495B2 (de) |
BE (1) | BE802002A (de) |
CA (1) | CA1106477A (de) |
DE (1) | DE2334116C3 (de) |
FR (1) | FR2197287B1 (de) |
GB (1) | GB1413092A (de) |
IT (1) | IT991964B (de) |
NL (1) | NL165607C (de) |
SE (1) | SE382148B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49131525A (de) * | 1973-04-05 | 1974-12-17 | ||
US3866067A (en) * | 1973-05-21 | 1975-02-11 | Fairchild Camera Instr Co | Charge coupled device with exposure and antiblooming control |
JPS5140790A (de) * | 1974-10-04 | 1976-04-05 | Oki Electric Ind Co Ltd | |
JPS5732547B2 (de) * | 1974-12-25 | 1982-07-12 | ||
DE2813254C2 (de) * | 1978-03-28 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Eindimensionaler CCD-Sensor mit Überlaufvorrichtung |
JPS5847378A (ja) * | 1981-09-17 | 1983-03-19 | Canon Inc | 撮像素子 |
JPS60244064A (ja) * | 1984-05-18 | 1985-12-03 | Nec Corp | 固体撮像装置 |
JPS60163876U (ja) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | 半導体撮像装置 |
GB2181012B (en) * | 1985-09-20 | 1989-09-13 | Philips Electronic Associated | Imaging devices comprising photovoltaic detector elements |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1566558A (de) * | 1968-03-20 | 1969-05-09 | ||
IE34899B1 (en) * | 1970-02-16 | 1975-09-17 | Western Electric Co | Improvements in or relating to semiconductor devices |
FR2101023B1 (de) * | 1970-08-07 | 1973-11-23 | Thomson Csf |
-
1973
- 1973-01-19 CA CA161,619A patent/CA1106477A/en not_active Expired
- 1973-07-02 SE SE7309285A patent/SE382148B/xx unknown
- 1973-07-04 GB GB3178373A patent/GB1413092A/en not_active Expired
- 1973-07-04 NL NL7309340.A patent/NL165607C/xx not_active IP Right Cessation
- 1973-07-05 FR FR7324749A patent/FR2197287B1/fr not_active Expired
- 1973-07-05 DE DE2334116A patent/DE2334116C3/de not_active Expired
- 1973-07-05 IT IT51274/73A patent/IT991964B/it active
- 1973-07-06 BE BE133191A patent/BE802002A/xx not_active IP Right Cessation
- 1973-07-10 JP JP48077186A patent/JPS5222495B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL165607C (nl) | 1981-04-15 |
NL7309340A (de) | 1974-01-14 |
CA1106477A (en) | 1981-08-04 |
DE2334116C3 (de) | 1983-11-10 |
JPS5222495B2 (de) | 1977-06-17 |
GB1413092A (en) | 1975-11-05 |
DE2334116B2 (de) | 1977-06-30 |
JPS4946625A (de) | 1974-05-04 |
SE382148B (sv) | 1976-01-12 |
BE802002A (fr) | 1973-11-05 |
DE2334116A1 (de) | 1974-01-31 |
FR2197287A1 (de) | 1974-03-22 |
NL165607B (nl) | 1980-11-17 |
FR2197287B1 (de) | 1976-05-28 |
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