CA1106477A - Overflow channel for charge transfer imaging devices - Google Patents
Overflow channel for charge transfer imaging devicesInfo
- Publication number
- CA1106477A CA1106477A CA161,619A CA161619A CA1106477A CA 1106477 A CA1106477 A CA 1106477A CA 161619 A CA161619 A CA 161619A CA 1106477 A CA1106477 A CA 1106477A
- Authority
- CA
- Canada
- Prior art keywords
- medium
- integration sites
- area
- region
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 52
- 238000003384 imaging method Methods 0.000 title claims abstract description 34
- 230000010354 integration Effects 0.000 claims abstract description 89
- 239000002800 charge carrier Substances 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 20
- 239000012212 insulator Substances 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims 6
- 230000004888 barrier function Effects 0.000 claims 3
- 230000005284 excitation Effects 0.000 claims 3
- 238000005036 potential barrier Methods 0.000 claims 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241001663154 Electron Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27033872A | 1972-07-10 | 1972-07-10 | |
| US270,338 | 1988-11-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1106477A true CA1106477A (en) | 1981-08-04 |
Family
ID=23030921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA161,619A Expired CA1106477A (en) | 1972-07-10 | 1973-01-19 | Overflow channel for charge transfer imaging devices |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5222495B2 (de) |
| BE (1) | BE802002A (de) |
| CA (1) | CA1106477A (de) |
| DE (1) | DE2334116C3 (de) |
| FR (1) | FR2197287B1 (de) |
| GB (1) | GB1413092A (de) |
| IT (1) | IT991964B (de) |
| NL (1) | NL165607C (de) |
| SE (1) | SE382148B (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49131525A (de) * | 1973-04-05 | 1974-12-17 | ||
| US3866067A (en) * | 1973-05-21 | 1975-02-11 | Fairchild Camera Instr Co | Charge coupled device with exposure and antiblooming control |
| JPS5140790A (de) * | 1974-10-04 | 1976-04-05 | Oki Electric Ind Co Ltd | |
| JPS5732547B2 (de) * | 1974-12-25 | 1982-07-12 | ||
| DE2813254C2 (de) * | 1978-03-28 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Eindimensionaler CCD-Sensor mit Überlaufvorrichtung |
| JPS5847378A (ja) * | 1981-09-17 | 1983-03-19 | Canon Inc | 撮像素子 |
| JPS60244064A (ja) * | 1984-05-18 | 1985-12-03 | Nec Corp | 固体撮像装置 |
| JPS60163876U (ja) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | 半導体撮像装置 |
| GB2181012B (en) * | 1985-09-20 | 1989-09-13 | Philips Electronic Associated | Imaging devices comprising photovoltaic detector elements |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1566558A (de) * | 1968-03-20 | 1969-05-09 | ||
| IE34899B1 (en) * | 1970-02-16 | 1975-09-17 | Western Electric Co | Improvements in or relating to semiconductor devices |
| FR2101023B1 (de) * | 1970-08-07 | 1973-11-23 | Thomson Csf |
-
1973
- 1973-01-19 CA CA161,619A patent/CA1106477A/en not_active Expired
- 1973-07-02 SE SE7309285A patent/SE382148B/xx unknown
- 1973-07-04 NL NL7309340A patent/NL165607C/xx not_active IP Right Cessation
- 1973-07-04 GB GB3178373A patent/GB1413092A/en not_active Expired
- 1973-07-05 IT IT5127473A patent/IT991964B/it active
- 1973-07-05 DE DE19732334116 patent/DE2334116C3/de not_active Expired
- 1973-07-05 FR FR7324749A patent/FR2197287B1/fr not_active Expired
- 1973-07-06 BE BE133191A patent/BE802002A/xx not_active IP Right Cessation
- 1973-07-10 JP JP48077186A patent/JPS5222495B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2334116C3 (de) | 1983-11-10 |
| SE382148B (sv) | 1976-01-12 |
| DE2334116B2 (de) | 1977-06-30 |
| GB1413092A (en) | 1975-11-05 |
| NL165607B (nl) | 1980-11-17 |
| FR2197287A1 (de) | 1974-03-22 |
| IT991964B (it) | 1975-08-30 |
| DE2334116A1 (de) | 1974-01-31 |
| NL165607C (nl) | 1981-04-15 |
| NL7309340A (de) | 1974-01-14 |
| BE802002A (fr) | 1973-11-05 |
| JPS4946625A (de) | 1974-05-04 |
| JPS5222495B2 (de) | 1977-06-17 |
| FR2197287B1 (de) | 1976-05-28 |
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| JPH0454987B2 (de) | ||
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |