IT951315B - Dispositivo per la protezione del lo strato dielettrico di porta dei transistori ad effetto di campo a prota isolat - Google Patents
Dispositivo per la protezione del lo strato dielettrico di porta dei transistori ad effetto di campo a prota isolatInfo
- Publication number
- IT951315B IT951315B IT2301972A IT2301972A IT951315B IT 951315 B IT951315 B IT 951315B IT 2301972 A IT2301972 A IT 2301972A IT 2301972 A IT2301972 A IT 2301972A IT 951315 B IT951315 B IT 951315B
- Authority
- IT
- Italy
- Prior art keywords
- isolat
- prota
- protecting
- field effect
- effect transistors
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16147871A | 1971-07-12 | 1971-07-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT951315B true IT951315B (it) | 1973-06-30 |
Family
ID=22581334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2301972A IT951315B (it) | 1971-07-12 | 1972-04-11 | Dispositivo per la protezione del lo strato dielettrico di porta dei transistori ad effetto di campo a prota isolat |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5138587B1 (de) |
| AU (1) | AU471347B2 (de) |
| BE (1) | BE781698A (de) |
| CA (1) | CA941515A (de) |
| DE (1) | DE2215850A1 (de) |
| FR (1) | FR2145460B1 (de) |
| GB (1) | GB1380466A (de) |
| IT (1) | IT951315B (de) |
| NL (1) | NL7204607A (de) |
| SE (1) | SE379117B (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2404922A1 (fr) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | Dispositif semi-conducteur formant cellule de memoire morte programmable |
| JPS57141962A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPS5825264A (ja) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
| JPH02185069A (ja) * | 1988-12-02 | 1990-07-19 | Motorola Inc | 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス |
| US5025298A (en) * | 1989-08-22 | 1991-06-18 | Motorola, Inc. | Semiconductor structure with closely coupled substrate temperature sense element |
| US5005061A (en) * | 1990-02-05 | 1991-04-02 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
| DE69417944T2 (de) * | 1993-04-30 | 1999-12-09 | Ibm | Verfahren zum Herstellen einer Schutzdiode gegen elektrostatische Entladungen in der Silizium-auf-Insulator-Technologie |
| JP5924313B2 (ja) | 2012-08-06 | 2016-05-25 | 株式会社デンソー | ダイオード |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3728591A (en) * | 1971-09-03 | 1973-04-17 | Rca Corp | Gate protective device for insulated gate field-effect transistors |
-
1972
- 1972-03-16 CA CA137,313A patent/CA941515A/en not_active Expired
- 1972-03-30 DE DE19722215850 patent/DE2215850A1/de active Pending
- 1972-03-30 GB GB1497872A patent/GB1380466A/en not_active Expired
- 1972-04-05 BE BE781698A patent/BE781698A/xx unknown
- 1972-04-06 NL NL7204607A patent/NL7204607A/xx not_active Application Discontinuation
- 1972-04-10 AU AU40993/72A patent/AU471347B2/en not_active Expired
- 1972-04-11 FR FR7212677A patent/FR2145460B1/fr not_active Expired
- 1972-04-11 SE SE466172A patent/SE379117B/xx unknown
- 1972-04-11 IT IT2301972A patent/IT951315B/it active
- 1972-04-12 JP JP3681372A patent/JPS5138587B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2215850A1 (de) | 1973-02-08 |
| CA941515A (en) | 1974-02-05 |
| AU4099372A (en) | 1973-10-18 |
| SE379117B (de) | 1975-09-22 |
| BE781698A (fr) | 1972-07-31 |
| NL7204607A (de) | 1973-01-16 |
| JPS5138587B1 (de) | 1976-10-22 |
| FR2145460A1 (de) | 1973-02-23 |
| GB1380466A (en) | 1975-01-15 |
| FR2145460B1 (de) | 1977-01-14 |
| AU471347B2 (en) | 1973-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IT955274B (it) | Dispositivo per la protezione del la porta dei transistori ad effet to di campo a porta isolata | |
| IT941940B (it) | Transistore di memoria ad effetto di campo a porta isolat | |
| IT1034492B (it) | Transistore ad effetto di campo a porta isolata | |
| IT956974B (it) | Procedimento per la fabbricazione di pellicole termoplastiche bias sialmente stirate | |
| IT982456B (it) | Procedimento per la fabbricazione di dispositivi semiconduttori e di spositivo ottenuto con il procedi mento | |
| IT959692B (it) | Contatore utilizzante transistori ad effetto di campo a porta isolata | |
| IT962927B (it) | Transistore ad effetto di campo | |
| IT972532B (it) | Pellicola di poliolefina degradabile | |
| IT954848B (it) | Composti di tetracloroftalide | |
| SE382940B (sv) | Anordning for avgradning av ihaliga plastforemal | |
| IT951315B (it) | Dispositivo per la protezione del lo strato dielettrico di porta dei transistori ad effetto di campo a prota isolat | |
| IT953974B (it) | Transistore ad effetto di campo e procedimento per fabbricare transistori ad effetto di campo | |
| IT940688B (it) | Metodo per la fabbricazione di un dispositivo semiconduttore presen tante almeno un transistore ad ef fetto di campo a porta isolata e dispositivo semiconduttore fabbri cato con l ausilio di tale metodo | |
| CA1011457A (en) | Operation of field-effect transistor circuits having substantial distributed capacitance | |
| IT949059B (it) | Procedimento per la fabbricazione di transistori planari a valanga | |
| SE385187B (sv) | Forfarande for framstellning av plastomholjda tamponger av fibrosa organiska emnen jemte anordning for genomforande av forfarandet | |
| BR7304898D0 (pt) | Um transistor de efeito de campo | |
| IT1022332B (it) | Dispositivo con transistori a effetto di campo | |
| IT998472B (it) | Procedimento e dispositivo per la produzione ad umido di composta con melme organiche | |
| FI55173B (fi) | Nytt foerfarande foer framstaellning av 2-(3-bensoylfenyl)-laegre-alkansyror | |
| IT995581B (it) | Transistore ad effetto di campo a porta isolata | |
| IT969355B (it) | Oscillatore gunn con transistore a effetto di campo | |
| IT998749B (it) | Transistore ad eppetto di campo perfezionato | |
| SE383636B (sv) | Vulkbara polymerer av konjugerade polycykliska polyener och forfarande for framstellning derav | |
| IT993617B (it) | Dispositivo di semiconduttori |