IT940688B - Metodo per la fabbricazione di un dispositivo semiconduttore presen tante almeno un transistore ad ef fetto di campo a porta isolata e dispositivo semiconduttore fabbri cato con l ausilio di tale metodo - Google Patents

Metodo per la fabbricazione di un dispositivo semiconduttore presen tante almeno un transistore ad ef fetto di campo a porta isolata e dispositivo semiconduttore fabbri cato con l ausilio di tale metodo

Info

Publication number
IT940688B
IT940688B IT31298/71A IT3129871A IT940688B IT 940688 B IT940688 B IT 940688B IT 31298/71 A IT31298/71 A IT 31298/71A IT 3129871 A IT3129871 A IT 3129871A IT 940688 B IT940688 B IT 940688B
Authority
IT
Italy
Prior art keywords
semiconducting device
aid
manufacturing
effect transistor
field
Prior art date
Application number
IT31298/71A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT940688B publication Critical patent/IT940688B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
IT31298/71A 1970-11-21 1971-11-18 Metodo per la fabbricazione di un dispositivo semiconduttore presen tante almeno un transistore ad ef fetto di campo a porta isolata e dispositivo semiconduttore fabbri cato con l ausilio di tale metodo IT940688B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7017066A NL7017066A (it) 1970-11-21 1970-11-21

Publications (1)

Publication Number Publication Date
IT940688B true IT940688B (it) 1973-02-20

Family

ID=19811619

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31298/71A IT940688B (it) 1970-11-21 1971-11-18 Metodo per la fabbricazione di un dispositivo semiconduttore presen tante almeno un transistore ad ef fetto di campo a porta isolata e dispositivo semiconduttore fabbri cato con l ausilio di tale metodo

Country Status (14)

Country Link
US (1) US3767487A (it)
JP (1) JPS5128512B1 (it)
AT (1) AT339963B (it)
AU (1) AU464037B2 (it)
BE (1) BE775615A (it)
CA (1) CA934478A (it)
CH (1) CH534959A (it)
DE (1) DE2155816A1 (it)
ES (1) ES397182A1 (it)
FR (1) FR2115289B1 (it)
GB (1) GB1372086A (it)
IT (1) IT940688B (it)
NL (1) NL7017066A (it)
SE (1) SE380931B (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028717A (en) * 1975-09-22 1977-06-07 Ibm Corporation Field effect transistor having improved threshold stability
JPS5333074A (en) * 1976-09-08 1978-03-28 Sanyo Electric Co Ltd Production of complementary type insulated gate field effect semiconductor device
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
DE3205022A1 (de) * 1981-02-14 1982-09-16 Mitsubishi Denki K.K., Tokyo Verfahren zum herstellen einer integrierten halbleiterschaltung
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
JPH08172139A (ja) * 1994-12-19 1996-07-02 Sony Corp 半導体装置製造方法
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6900091B2 (en) * 2002-08-14 2005-05-31 Advanced Analogic Technologies, Inc. Isolated complementary MOS devices in epi-less substrate
DE102005024951A1 (de) * 2005-05-31 2006-12-14 Infineon Technologies Ag Halbleiterspeicherbauelement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
DE1439740A1 (de) * 1964-11-06 1970-01-22 Telefunken Patent Feldeffekttransistor mit isolierter Steuerelektrode
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
FR1557080A (it) * 1967-12-14 1969-02-14
US3617827A (en) * 1970-03-30 1971-11-02 Albert Schmitz Semiconductor device with complementary transistors

Also Published As

Publication number Publication date
AU3579171A (en) 1973-05-24
AT339963B (de) 1977-11-25
ES397182A1 (es) 1974-05-01
NL7017066A (it) 1972-05-24
US3767487A (en) 1973-10-23
JPS5128512B1 (it) 1976-08-19
GB1372086A (en) 1974-10-30
CH534959A (de) 1973-03-15
AU464037B2 (en) 1975-07-29
FR2115289A1 (it) 1972-07-07
ATA996171A (de) 1977-03-15
BE775615A (fr) 1972-05-19
FR2115289B1 (it) 1976-06-04
DE2155816A1 (de) 1972-05-25
SE380931B (sv) 1975-11-17
CA934478A (en) 1973-09-25

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