JPS5128512B1 - - Google Patents
Info
- Publication number
- JPS5128512B1 JPS5128512B1 JP46092032A JP9203271A JPS5128512B1 JP S5128512 B1 JPS5128512 B1 JP S5128512B1 JP 46092032 A JP46092032 A JP 46092032A JP 9203271 A JP9203271 A JP 9203271A JP S5128512 B1 JPS5128512 B1 JP S5128512B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7017066A NL7017066A (ja) | 1970-11-21 | 1970-11-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5128512B1 true JPS5128512B1 (ja) | 1976-08-19 |
Family
ID=19811619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP46092032A Pending JPS5128512B1 (ja) | 1970-11-21 | 1971-11-18 |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US3767487A (ja) |
| JP (1) | JPS5128512B1 (ja) |
| AT (1) | AT339963B (ja) |
| AU (1) | AU464037B2 (ja) |
| BE (1) | BE775615A (ja) |
| CA (1) | CA934478A (ja) |
| CH (1) | CH534959A (ja) |
| DE (1) | DE2155816A1 (ja) |
| ES (1) | ES397182A1 (ja) |
| FR (1) | FR2115289B1 (ja) |
| GB (1) | GB1372086A (ja) |
| IT (1) | IT940688B (ja) |
| NL (1) | NL7017066A (ja) |
| SE (1) | SE380931B (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4028717A (en) * | 1975-09-22 | 1977-06-07 | Ibm Corporation | Field effect transistor having improved threshold stability |
| JPS5333074A (en) * | 1976-09-08 | 1978-03-28 | Sanyo Electric Co Ltd | Production of complementary type insulated gate field effect semiconductor device |
| US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
| US4445268A (en) * | 1981-02-14 | 1984-05-01 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor integrated circuit BI-MOS device |
| JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
| US4578128A (en) * | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
| IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
| JPH08172139A (ja) * | 1994-12-19 | 1996-07-02 | Sony Corp | 半導体装置製造方法 |
| US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
| US6900091B2 (en) * | 2002-08-14 | 2005-05-31 | Advanced Analogic Technologies, Inc. | Isolated complementary MOS devices in epi-less substrate |
| DE102005024951A1 (de) * | 2005-05-31 | 2006-12-14 | Infineon Technologies Ag | Halbleiterspeicherbauelement |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1127616A (en) * | 1964-11-06 | 1968-09-18 | Telefunken Patent | Field-effect transistor with insulated control electrode |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3183128A (en) * | 1962-06-11 | 1965-05-11 | Fairchild Camera Instr Co | Method of making field-effect transistors |
| NL152707B (nl) * | 1967-06-08 | 1977-03-15 | Philips Nv | Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan. |
| FR1557080A (ja) * | 1967-12-14 | 1969-02-14 | ||
| US3617827A (en) * | 1970-03-30 | 1971-11-02 | Albert Schmitz | Semiconductor device with complementary transistors |
-
1970
- 1970-11-21 NL NL7017066A patent/NL7017066A/xx unknown
-
1971
- 1971-11-05 US US00196017A patent/US3767487A/en not_active Expired - Lifetime
- 1971-11-10 DE DE19712155816 patent/DE2155816A1/de active Pending
- 1971-11-15 CA CA127611A patent/CA934478A/en not_active Expired
- 1971-11-17 AU AU35791/71A patent/AU464037B2/en not_active Expired
- 1971-11-18 AT AT996171A patent/AT339963B/de not_active IP Right Cessation
- 1971-11-18 JP JP46092032A patent/JPS5128512B1/ja active Pending
- 1971-11-18 GB GB5360971A patent/GB1372086A/en not_active Expired
- 1971-11-18 IT IT31298/71A patent/IT940688B/it active
- 1971-11-18 SE SE7114780A patent/SE380931B/xx unknown
- 1971-11-18 CH CH1679371A patent/CH534959A/de not_active IP Right Cessation
- 1971-11-19 ES ES397182A patent/ES397182A1/es not_active Expired
- 1971-11-19 FR FR7141535A patent/FR2115289B1/fr not_active Expired
- 1971-11-19 BE BE775615A patent/BE775615A/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1127616A (en) * | 1964-11-06 | 1968-09-18 | Telefunken Patent | Field-effect transistor with insulated control electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2115289A1 (ja) | 1972-07-07 |
| ATA996171A (de) | 1977-03-15 |
| ES397182A1 (es) | 1974-05-01 |
| IT940688B (it) | 1973-02-20 |
| AU3579171A (en) | 1973-05-24 |
| US3767487A (en) | 1973-10-23 |
| FR2115289B1 (ja) | 1976-06-04 |
| CA934478A (en) | 1973-09-25 |
| GB1372086A (en) | 1974-10-30 |
| CH534959A (de) | 1973-03-15 |
| DE2155816A1 (de) | 1972-05-25 |
| AT339963B (de) | 1977-11-25 |
| NL7017066A (ja) | 1972-05-24 |
| AU464037B2 (en) | 1975-07-29 |
| SE380931B (sv) | 1975-11-17 |
| BE775615A (fr) | 1972-05-19 |