NL7017066A - - Google Patents

Info

Publication number
NL7017066A
NL7017066A NL7017066A NL7017066A NL7017066A NL 7017066 A NL7017066 A NL 7017066A NL 7017066 A NL7017066 A NL 7017066A NL 7017066 A NL7017066 A NL 7017066A NL 7017066 A NL7017066 A NL 7017066A
Authority
NL
Netherlands
Application number
NL7017066A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7017066A priority Critical patent/NL7017066A/xx
Priority to US00196017A priority patent/US3767487A/en
Priority to DE19712155816 priority patent/DE2155816A1/de
Priority to CA127611A priority patent/CA934478A/en
Priority to AU35791/71A priority patent/AU464037B2/en
Priority to GB5360971A priority patent/GB1372086A/en
Priority to SE7114780A priority patent/SE380931B/xx
Priority to CH1679371A priority patent/CH534959A/de
Priority to JP46092032A priority patent/JPS5128512B1/ja
Priority to AT996171A priority patent/AT339963B/de
Priority to IT31298/71A priority patent/IT940688B/it
Priority to ES397182A priority patent/ES397182A1/es
Priority to FR7141535A priority patent/FR2115289B1/fr
Priority to BE775615A priority patent/BE775615A/xx
Publication of NL7017066A publication Critical patent/NL7017066A/xx
Priority to US05/534,204 priority patent/US3974516A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL7017066A 1970-11-21 1970-11-21 NL7017066A (ja)

Priority Applications (15)

Application Number Priority Date Filing Date Title
NL7017066A NL7017066A (ja) 1970-11-21 1970-11-21
US00196017A US3767487A (en) 1970-11-21 1971-11-05 Method of producing igfet devices having outdiffused regions and the product thereof
DE19712155816 DE2155816A1 (de) 1970-11-21 1971-11-10 Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einem Feldeffekttransistor mit isolierter Torelektrode, und durch dieses Verfahren hergestellte Halbleiteranordnung
CA127611A CA934478A (en) 1970-11-21 1971-11-15 Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method
AU35791/71A AU464037B2 (en) 1970-11-21 1971-11-17 A method of manufacturing a semiconductor device having atleast one insulated gate field effect transistor, and semiconductor device manufactured by using the method
CH1679371A CH534959A (de) 1970-11-21 1971-11-18 Verfahren zur Herstellung einer Halbleiteranordnung mit einem Halbleiterkörper mit mindestens einem Feldeffekttransistor mit isolierter Torelektrode, und durch dieses Verfahren hergestellte Halbleiteranordnung
SE7114780A SE380931B (sv) 1970-11-21 1971-11-18 Sett att framstella en halvledaranordning, varvid ett omrade inom en halvledarkropp bildas genom indiffusion av dopningsmaterial, varefter dopningsmaterialet delvis utdiffunderas fran halvledarkroppen i ett rum med e
GB5360971A GB1372086A (en) 1970-11-21 1971-11-18 Semiconductor device manufacture
JP46092032A JPS5128512B1 (ja) 1970-11-21 1971-11-18
AT996171A AT339963B (de) 1970-11-21 1971-11-18 Verfahren zur herstellung einer halbleiteranordnung mit einem halbleiterkorper mit mindestens einem feldeffekttransistor mit isolierter torelektrode
IT31298/71A IT940688B (it) 1970-11-21 1971-11-18 Metodo per la fabbricazione di un dispositivo semiconduttore presen tante almeno un transistore ad ef fetto di campo a porta isolata e dispositivo semiconduttore fabbri cato con l ausilio di tale metodo
ES397182A ES397182A1 (es) 1970-11-21 1971-11-19 Un metodo de fabricacion de un dispositivo semiconductor.
FR7141535A FR2115289B1 (ja) 1970-11-21 1971-11-19
BE775615A BE775615A (fr) 1970-11-21 1971-11-19 Procede permettant la fabrication d'un dispositif semiconducteur et dispositif semiconducteur ainsi fabrique
US05/534,204 US3974516A (en) 1970-11-21 1974-12-19 Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7017066A NL7017066A (ja) 1970-11-21 1970-11-21

Publications (1)

Publication Number Publication Date
NL7017066A true NL7017066A (ja) 1972-05-24

Family

ID=19811619

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7017066A NL7017066A (ja) 1970-11-21 1970-11-21

Country Status (14)

Country Link
US (1) US3767487A (ja)
JP (1) JPS5128512B1 (ja)
AT (1) AT339963B (ja)
AU (1) AU464037B2 (ja)
BE (1) BE775615A (ja)
CA (1) CA934478A (ja)
CH (1) CH534959A (ja)
DE (1) DE2155816A1 (ja)
ES (1) ES397182A1 (ja)
FR (1) FR2115289B1 (ja)
GB (1) GB1372086A (ja)
IT (1) IT940688B (ja)
NL (1) NL7017066A (ja)
SE (1) SE380931B (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028717A (en) * 1975-09-22 1977-06-07 Ibm Corporation Field effect transistor having improved threshold stability
JPS5333074A (en) * 1976-09-08 1978-03-28 Sanyo Electric Co Ltd Production of complementary type insulated gate field effect semiconductor device
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
DE3205022A1 (de) * 1981-02-14 1982-09-16 Mitsubishi Denki K.K., Tokyo Verfahren zum herstellen einer integrierten halbleiterschaltung
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
JPH08172139A (ja) * 1994-12-19 1996-07-02 Sony Corp 半導体装置製造方法
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6900091B2 (en) * 2002-08-14 2005-05-31 Advanced Analogic Technologies, Inc. Isolated complementary MOS devices in epi-less substrate
DE102005024951A1 (de) * 2005-05-31 2006-12-14 Infineon Technologies Ag Halbleiterspeicherbauelement

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
DE1439740A1 (de) * 1964-11-06 1970-01-22 Telefunken Patent Feldeffekttransistor mit isolierter Steuerelektrode
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
FR1557080A (ja) * 1967-12-14 1969-02-14
US3617827A (en) * 1970-03-30 1971-11-02 Albert Schmitz Semiconductor device with complementary transistors

Also Published As

Publication number Publication date
AU3579171A (en) 1973-05-24
ATA996171A (de) 1977-03-15
SE380931B (sv) 1975-11-17
AT339963B (de) 1977-11-25
ES397182A1 (es) 1974-05-01
FR2115289A1 (ja) 1972-07-07
US3767487A (en) 1973-10-23
IT940688B (it) 1973-02-20
CH534959A (de) 1973-03-15
GB1372086A (en) 1974-10-30
AU464037B2 (en) 1975-07-29
CA934478A (en) 1973-09-25
DE2155816A1 (de) 1972-05-25
JPS5128512B1 (ja) 1976-08-19
FR2115289B1 (ja) 1976-06-04
BE775615A (fr) 1972-05-19

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