IT939699B - Perfezionamento nei transistori ad effetto di campo di tipo metallo ossido silicio con elemento di guardia a diffusione - Google Patents
Perfezionamento nei transistori ad effetto di campo di tipo metallo ossido silicio con elemento di guardia a diffusioneInfo
- Publication number
- IT939699B IT939699B IT53821/71A IT5382171A IT939699B IT 939699 B IT939699 B IT 939699B IT 53821/71 A IT53821/71 A IT 53821/71A IT 5382171 A IT5382171 A IT 5382171A IT 939699 B IT939699 B IT 939699B
- Authority
- IT
- Italy
- Prior art keywords
- improvement
- metal
- type field
- effect transistors
- oxide silicon
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8654470A | 1970-11-02 | 1970-11-02 | |
| US095521A US3868721A (en) | 1970-11-02 | 1970-12-07 | Diffusion guarded metal-oxide-silicon field effect transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT939699B true IT939699B (it) | 1973-02-10 |
Family
ID=26774863
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT53822/71A IT939700B (it) | 1970-11-02 | 1971-10-30 | Perfezionamento nei transistori ad effetto di campo di tipo metal lo ossido silicio con elemento di guardia a diffusione |
| IT53821/71A IT939699B (it) | 1970-11-02 | 1971-10-30 | Perfezionamento nei transistori ad effetto di campo di tipo metallo ossido silicio con elemento di guardia a diffusione |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT53822/71A IT939700B (it) | 1970-11-02 | 1971-10-30 | Perfezionamento nei transistori ad effetto di campo di tipo metal lo ossido silicio con elemento di guardia a diffusione |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3868721A (it) |
| BE (1) | BE774722A (it) |
| DE (2) | DE7141390U (it) |
| FR (1) | FR2112385A1 (it) |
| GB (3) | GB1378146A (it) |
| IL (1) | IL38044A0 (it) |
| IT (2) | IT939700B (it) |
| NL (1) | NL7115074A (it) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4123771A (en) * | 1973-09-21 | 1978-10-31 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile semiconductor memory |
| IN144541B (it) * | 1975-06-11 | 1978-05-13 | Rca Corp | |
| US4240093A (en) * | 1976-12-10 | 1980-12-16 | Rca Corporation | Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
| EP0248267A3 (de) * | 1986-06-06 | 1990-04-25 | Siemens Aktiengesellschaft | Monolithisch integrierte Schaltung mit zueinander parallelen Schaltungszweigen |
| US4860080A (en) * | 1987-03-31 | 1989-08-22 | General Electric Company | Isolation for transistor devices having a pilot structure |
| US4864380A (en) * | 1987-05-12 | 1989-09-05 | General Electric Company | Edgeless CMOS device |
| US5670816A (en) * | 1989-04-07 | 1997-09-23 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP3267479B2 (ja) * | 1995-10-11 | 2002-03-18 | 東芝マイクロエレクトロニクス株式会社 | 半導体集積回路装置 |
| US6883894B2 (en) | 2001-03-19 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Printhead with looped gate transistor structures |
| JP2006202860A (ja) * | 2005-01-19 | 2006-08-03 | Toshiba Corp | 半導体装置及びその製造方法 |
| US7511345B2 (en) * | 2005-06-21 | 2009-03-31 | Sarnoff Corporation | Bulk resistance control technique |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3272989A (en) * | 1963-12-17 | 1966-09-13 | Rca Corp | Integrated electrical circuit |
| US3403270A (en) * | 1965-05-10 | 1968-09-24 | Gen Micro Electronics Inc | Overvoltage protective circuit for insulated gate field effect transistor |
| US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
| US3427514A (en) * | 1966-10-13 | 1969-02-11 | Rca Corp | Mos tetrode |
| US3518750A (en) * | 1968-10-02 | 1970-07-07 | Nat Semiconductor Corp | Method of manufacturing a misfet |
| US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
-
1970
- 1970-12-07 US US095521A patent/US3868721A/en not_active Expired - Lifetime
-
1971
- 1971-10-29 BE BE774722A patent/BE774722A/xx unknown
- 1971-10-29 FR FR7138960A patent/FR2112385A1/fr not_active Withdrawn
- 1971-10-29 GB GB5032671A patent/GB1378146A/en not_active Expired
- 1971-10-29 GB GB2406474A patent/GB1378148A/en not_active Expired
- 1971-10-29 GB GB2406374A patent/GB1378147A/en not_active Expired
- 1971-10-30 IT IT53822/71A patent/IT939700B/it active
- 1971-10-30 IT IT53821/71A patent/IT939699B/it active
- 1971-11-01 IL IL38044A patent/IL38044A0/xx unknown
- 1971-11-02 NL NL7115074A patent/NL7115074A/xx unknown
- 1971-11-02 DE DE19717141390U patent/DE7141390U/de not_active Expired
- 1971-11-02 DE DE19712154508 patent/DE2154508A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IL38044A0 (en) | 1972-01-27 |
| GB1378148A (en) | 1974-12-18 |
| BE774722A (fr) | 1972-05-02 |
| IT939700B (it) | 1973-02-10 |
| NL7115074A (it) | 1972-05-04 |
| DE2154508A1 (de) | 1972-07-06 |
| FR2112385A1 (it) | 1972-06-16 |
| GB1378146A (en) | 1974-12-18 |
| DE7141390U (de) | 1972-09-21 |
| US3868721A (en) | 1975-02-25 |
| GB1378147A (en) | 1974-12-18 |
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