IL38044A0 - Mosfet device - Google Patents
Mosfet deviceInfo
- Publication number
- IL38044A0 IL38044A0 IL38044A IL3804471A IL38044A0 IL 38044 A0 IL38044 A0 IL 38044A0 IL 38044 A IL38044 A IL 38044A IL 3804471 A IL3804471 A IL 3804471A IL 38044 A0 IL38044 A0 IL 38044A0
- Authority
- IL
- Israel
- Prior art keywords
- mosfet device
- mosfet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8654470A | 1970-11-02 | 1970-11-02 | |
| US095521A US3868721A (en) | 1970-11-02 | 1970-12-07 | Diffusion guarded metal-oxide-silicon field effect transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL38044A0 true IL38044A0 (en) | 1972-01-27 |
Family
ID=26774863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL38044A IL38044A0 (en) | 1970-11-02 | 1971-11-01 | Mosfet device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3868721A (xx) |
| BE (1) | BE774722A (xx) |
| DE (2) | DE2154508A1 (xx) |
| FR (1) | FR2112385A1 (xx) |
| GB (3) | GB1378147A (xx) |
| IL (1) | IL38044A0 (xx) |
| IT (2) | IT939700B (xx) |
| NL (1) | NL7115074A (xx) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4123771A (en) * | 1973-09-21 | 1978-10-31 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile semiconductor memory |
| IN144541B (xx) * | 1975-06-11 | 1978-05-13 | Rca Corp | |
| US4240093A (en) * | 1976-12-10 | 1980-12-16 | Rca Corporation | Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
| EP0248267A3 (de) * | 1986-06-06 | 1990-04-25 | Siemens Aktiengesellschaft | Monolithisch integrierte Schaltung mit zueinander parallelen Schaltungszweigen |
| US4860080A (en) * | 1987-03-31 | 1989-08-22 | General Electric Company | Isolation for transistor devices having a pilot structure |
| US4864380A (en) * | 1987-05-12 | 1989-09-05 | General Electric Company | Edgeless CMOS device |
| US5670816A (en) * | 1989-04-07 | 1997-09-23 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP3267479B2 (ja) * | 1995-10-11 | 2002-03-18 | 東芝マイクロエレクトロニクス株式会社 | 半導体集積回路装置 |
| US6883894B2 (en) * | 2001-03-19 | 2005-04-26 | Hewlett-Packard Development Company, L.P. | Printhead with looped gate transistor structures |
| JP2006202860A (ja) * | 2005-01-19 | 2006-08-03 | Toshiba Corp | 半導体装置及びその製造方法 |
| US7511345B2 (en) * | 2005-06-21 | 2009-03-31 | Sarnoff Corporation | Bulk resistance control technique |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3272989A (en) * | 1963-12-17 | 1966-09-13 | Rca Corp | Integrated electrical circuit |
| US3403270A (en) * | 1965-05-10 | 1968-09-24 | Gen Micro Electronics Inc | Overvoltage protective circuit for insulated gate field effect transistor |
| US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
| US3427514A (en) * | 1966-10-13 | 1969-02-11 | Rca Corp | Mos tetrode |
| US3518750A (en) * | 1968-10-02 | 1970-07-07 | Nat Semiconductor Corp | Method of manufacturing a misfet |
| US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
-
1970
- 1970-12-07 US US095521A patent/US3868721A/en not_active Expired - Lifetime
-
1971
- 1971-10-29 GB GB2406374A patent/GB1378147A/en not_active Expired
- 1971-10-29 GB GB5032671A patent/GB1378146A/en not_active Expired
- 1971-10-29 GB GB2406474A patent/GB1378148A/en not_active Expired
- 1971-10-29 BE BE774722A patent/BE774722A/xx unknown
- 1971-10-29 FR FR7138960A patent/FR2112385A1/fr not_active Withdrawn
- 1971-10-30 IT IT53822/71A patent/IT939700B/it active
- 1971-10-30 IT IT53821/71A patent/IT939699B/it active
- 1971-11-01 IL IL38044A patent/IL38044A0/xx unknown
- 1971-11-02 NL NL7115074A patent/NL7115074A/xx unknown
- 1971-11-02 DE DE19712154508 patent/DE2154508A1/de active Pending
- 1971-11-02 DE DE19717141390U patent/DE7141390U/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2154508A1 (de) | 1972-07-06 |
| US3868721A (en) | 1975-02-25 |
| DE7141390U (de) | 1972-09-21 |
| NL7115074A (xx) | 1972-05-04 |
| IT939699B (it) | 1973-02-10 |
| GB1378147A (en) | 1974-12-18 |
| BE774722A (fr) | 1972-05-02 |
| GB1378146A (en) | 1974-12-18 |
| FR2112385A1 (xx) | 1972-06-16 |
| GB1378148A (en) | 1974-12-18 |
| IT939700B (it) | 1973-02-10 |
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