IT8647648A0 - Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recessed) di lunghezza variabile - Google Patents

Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recessed) di lunghezza variabile

Info

Publication number
IT8647648A0
IT8647648A0 IT8647648A IT4764886A IT8647648A0 IT 8647648 A0 IT8647648 A0 IT 8647648A0 IT 8647648 A IT8647648 A IT 8647648A IT 4764886 A IT4764886 A IT 4764886A IT 8647648 A0 IT8647648 A0 IT 8647648A0
Authority
IT
Italy
Prior art keywords
submicrometric
mlr
gate
manufacture
variable length
Prior art date
Application number
IT8647648A
Other languages
English (en)
Other versions
IT1190294B (it
Inventor
Cetronio Antonio
Moretti Sergio
Compagnucci Vittoria
Original Assignee
Selenia Ind Elettroniche
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selenia Ind Elettroniche filed Critical Selenia Ind Elettroniche
Priority to IT47648/86A priority Critical patent/IT1190294B/it
Publication of IT8647648A0 publication Critical patent/IT8647648A0/it
Priority to EP87101800A priority patent/EP0232894A3/en
Application granted granted Critical
Publication of IT1190294B publication Critical patent/IT1190294B/it
Priority to US07/376,963 priority patent/US5130764A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/95—Multilayer mask including nonradiation sensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
IT47648/86A 1986-02-13 1986-02-13 Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recesse) di lunghezza variabile IT1190294B (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT47648/86A IT1190294B (it) 1986-02-13 1986-02-13 Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recesse) di lunghezza variabile
EP87101800A EP0232894A3 (en) 1986-02-13 1987-02-10 Multi layer photopolymeric structure for the manufacturing of mesfet devices with submicrometric gate and variable length recessed channel
US07/376,963 US5130764A (en) 1986-02-13 1989-07-06 Multi layer photopolymeric structure for the manufacturing of mesfet devices with submicrometric gate and variable length recessed channel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT47648/86A IT1190294B (it) 1986-02-13 1986-02-13 Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recesse) di lunghezza variabile

Publications (2)

Publication Number Publication Date
IT8647648A0 true IT8647648A0 (it) 1986-02-13
IT1190294B IT1190294B (it) 1988-02-16

Family

ID=11261663

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47648/86A IT1190294B (it) 1986-02-13 1986-02-13 Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recesse) di lunghezza variabile

Country Status (3)

Country Link
US (1) US5130764A (it)
EP (1) EP0232894A3 (it)
IT (1) IT1190294B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0366939A3 (en) * 1988-11-01 1990-12-27 Hewlett-Packard Company A process for forming a schottky barrier gate on gallium-arsenide
JPH0355852A (ja) * 1989-07-25 1991-03-11 Sony Corp 半導体装置の製造方法
DE69321184T2 (de) * 1992-08-19 1999-05-20 Mitsubishi Electric Corp Verfahren zur Herstellung eines Feldeffekttransistors
US5357397A (en) * 1993-03-15 1994-10-18 Hewlett-Packard Company Electric field emitter device for electrostatic discharge protection of integrated circuits
JPH06326297A (ja) * 1993-03-19 1994-11-25 Nec Corp 半導体装置
US5436201A (en) * 1993-05-28 1995-07-25 Hughes Aircraft Company Dual etchant process, particularly for gate recess fabrication in GaAs MMIC chips
KR100214467B1 (ko) * 1995-12-29 1999-08-02 구본준 반도체소자의 배선구조 형성방법
DE19717363C2 (de) * 1997-04-24 2001-09-06 Siemens Ag Herstellverfahren für eine Platinmetall-Struktur mittels eines Lift-off-Prozesses und Verwendung des Herstellverfahrens
GB0127075D0 (en) 2001-11-10 2002-01-02 Trikon Holdings Ltd Method of forming a patterned metal layer
DE10297185T5 (de) * 2001-11-10 2004-10-07 Trikon Holdings Ltd Verfahren zur Ausbildung einer gemusterten Metallschicht
US20060009038A1 (en) * 2004-07-12 2006-01-12 International Business Machines Corporation Processing for overcoming extreme topography
US20140093688A1 (en) * 2012-09-28 2014-04-03 Yindar Chuo Method for fabrication of nano-structures
US10672620B2 (en) 2016-02-01 2020-06-02 King Abdullah University Of Science And Technology Hybrid mask for deep etching
JP2019120500A (ja) * 2017-12-28 2019-07-22 株式会社ミツトヨ スケールおよびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3669661A (en) * 1970-03-06 1972-06-13 Westinghouse Electric Corp Method of producing thin film transistors
US4218532A (en) * 1977-10-13 1980-08-19 Bell Telephone Laboratories, Incorporated Photolithographic technique for depositing thin films
US4336549A (en) * 1978-02-21 1982-06-22 Hughes Aircraft Company Schottky-barrier gate gallium arsenide field effect devices
US4196439A (en) * 1978-07-03 1980-04-01 Bell Telephone Laboratories, Incorporated Semiconductor device drain contact configuration
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
JPS5952881A (ja) * 1982-09-21 1984-03-27 Fujitsu Ltd 電界効果型半導体装置の製造方法
JPS59175773A (ja) * 1983-03-26 1984-10-04 Mitsubishi Electric Corp 電界効果トランジスタ
US4533624A (en) * 1983-05-23 1985-08-06 Sperry Corporation Method of forming a low temperature multilayer photoresist lift-off pattern
US4618510A (en) * 1984-09-05 1986-10-21 Hewlett Packard Company Pre-passivated sub-micrometer gate electrodes for MESFET devices
US4612275A (en) * 1985-04-26 1986-09-16 International Business Machines Corporation Multilayer resists with improved sensitivity and reduced proximity effect

Also Published As

Publication number Publication date
EP0232894A2 (en) 1987-08-19
US5130764A (en) 1992-07-14
EP0232894A3 (en) 1990-02-07
IT1190294B (it) 1988-02-16

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