IT8522346A0 - Procedimento per produrre una barra semiconduttrice di silicio drogato con indio o bismuto. - Google Patents
Procedimento per produrre una barra semiconduttrice di silicio drogato con indio o bismuto.Info
- Publication number
- IT8522346A0 IT8522346A0 IT8522346A IT2234685A IT8522346A0 IT 8522346 A0 IT8522346 A0 IT 8522346A0 IT 8522346 A IT8522346 A IT 8522346A IT 2234685 A IT2234685 A IT 2234685A IT 8522346 A0 IT8522346 A0 IT 8522346A0
- Authority
- IT
- Italy
- Prior art keywords
- dopped
- bismuth
- indium
- silicon
- procedure
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052738 indium Inorganic materials 0.000 title 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3437524A DE3437524A1 (de) | 1984-10-12 | 1984-10-12 | Verfahren zum herstellen eines mit indium oder wismut dotierten silicium-halbleiterstabes |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8522346A0 true IT8522346A0 (it) | 1985-10-03 |
IT1185982B IT1185982B (it) | 1987-11-18 |
Family
ID=6247780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22346/85A IT1185982B (it) | 1984-10-12 | 1985-10-03 | Procedimento per produrre una barra semiconduttrice di silicio drogato con indio o bismuto |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS6197188A (it) |
DE (1) | DE3437524A1 (it) |
IT (1) | IT1185982B (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4726436B2 (ja) * | 2004-05-31 | 2011-07-20 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボの製造方法 |
JP5165024B2 (ja) * | 2010-06-07 | 2013-03-21 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2997410A (en) * | 1954-05-03 | 1961-08-22 | Rca Corp | Single crystalline alloys |
NL218610A (it) * | 1956-07-02 | |||
DE2639563A1 (de) * | 1976-09-02 | 1978-03-09 | Wacker Chemitronic | Verfahren zur herstellung von tiegelgezogenen siliciumstaeben mit gehalt an leichtfluechtigen dotierstoffen, insbesondere antimon, innerhalb enger widerstandstoleranzen |
-
1984
- 1984-10-12 DE DE3437524A patent/DE3437524A1/de not_active Ceased
-
1985
- 1985-10-03 IT IT22346/85A patent/IT1185982B/it active
- 1985-10-09 JP JP60225929A patent/JPS6197188A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS6197188A (ja) | 1986-05-15 |
IT1185982B (it) | 1987-11-18 |
DE3437524A1 (de) | 1986-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3872828T2 (de) | Halbleiterkristallplaettchen-stapel. | |
DE3584702D1 (de) | Halbleiterlaservorrichtung. | |
DE3582363D1 (de) | Fluessigkristall-organosilicium-verbindungen. | |
FI852986A0 (fi) | Ny kristallmodifikation. | |
FI853808L (fi) | Mikroinkapslade pyretroider. | |
IT1191118B (it) | Metodo per creare una stretta scana latura o fessura in una regione di un substrato,in particolare una regione di un substrato,a carattere di semiconduttore | |
DE3587748D1 (de) | Halbleiterlaseranordnung. | |
DE3575498D1 (de) | Halbleiter-fotodetektorvorrichtung. | |
DE3766920D1 (de) | Kernreaktorbrennelement. | |
DE3586934T2 (de) | Halbleiterlaser. | |
DE3579217D1 (de) | Aufzeichnungsfluessigkeit. | |
DE3686490T2 (de) | Halbleiterstruktur. | |
DE3587451T2 (de) | Halbleiterübergitterstruktur. | |
DE3583360D1 (de) | Fluessigkristallzusammensetzung. | |
IT8521977A0 (it) | Apparecchiatura per la crescita di monocristalli. | |
IT8521761A0 (it) | Barra di regolazione perfezionata per reattore ad acqua bollente. | |
GB8518798D0 (en) | Forming semiconductor crystal | |
IT8519887A0 (it) | Complesso di controllo per reattori. | |
IT8522346A0 (it) | Procedimento per produrre una barra semiconduttrice di silicio drogato con indio o bismuto. | |
DE3585473D1 (de) | Fluessigkristallzusammensetzung. | |
DE3587702T2 (de) | Halbleiterlaser. | |
NO863419L (no) | Dispergerbare salter. | |
DE3581025D1 (de) | Halbleiterlaser-vielfachanordnung. | |
IT8560382V0 (it) | Stanghetta per occhiali. | |
DE3583096D1 (de) | Fluessigkristallzusammensetzung. |