IT1185982B - Procedimento per produrre una barra semiconduttrice di silicio drogato con indio o bismuto - Google Patents

Procedimento per produrre una barra semiconduttrice di silicio drogato con indio o bismuto

Info

Publication number
IT1185982B
IT1185982B IT22346/85A IT2234685A IT1185982B IT 1185982 B IT1185982 B IT 1185982B IT 22346/85 A IT22346/85 A IT 22346/85A IT 2234685 A IT2234685 A IT 2234685A IT 1185982 B IT1185982 B IT 1185982B
Authority
IT
Italy
Prior art keywords
bismuto
drought
indium
semi
procedure
Prior art date
Application number
IT22346/85A
Other languages
English (en)
Other versions
IT8522346A0 (it
Inventor
Wolfgang Keller
Gerhard Barowski
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IT8522346A0 publication Critical patent/IT8522346A0/it
Application granted granted Critical
Publication of IT1185982B publication Critical patent/IT1185982B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT22346/85A 1984-10-12 1985-10-03 Procedimento per produrre una barra semiconduttrice di silicio drogato con indio o bismuto IT1185982B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3437524A DE3437524A1 (de) 1984-10-12 1984-10-12 Verfahren zum herstellen eines mit indium oder wismut dotierten silicium-halbleiterstabes

Publications (2)

Publication Number Publication Date
IT8522346A0 IT8522346A0 (it) 1985-10-03
IT1185982B true IT1185982B (it) 1987-11-18

Family

ID=6247780

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22346/85A IT1185982B (it) 1984-10-12 1985-10-03 Procedimento per produrre una barra semiconduttrice di silicio drogato con indio o bismuto

Country Status (3)

Country Link
JP (1) JPS6197188A (it)
DE (1) DE3437524A1 (it)
IT (1) IT1185982B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4726436B2 (ja) * 2004-05-31 2011-07-20 ジャパンスーパークォーツ株式会社 石英ガラスルツボの製造方法
JP5165024B2 (ja) * 2010-06-07 2013-03-21 ジャパンスーパークォーツ株式会社 石英ガラスルツボ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2997410A (en) * 1954-05-03 1961-08-22 Rca Corp Single crystalline alloys
NL218610A (it) * 1956-07-02
DE2639563A1 (de) * 1976-09-02 1978-03-09 Wacker Chemitronic Verfahren zur herstellung von tiegelgezogenen siliciumstaeben mit gehalt an leichtfluechtigen dotierstoffen, insbesondere antimon, innerhalb enger widerstandstoleranzen

Also Published As

Publication number Publication date
JPS6197188A (ja) 1986-05-15
DE3437524A1 (de) 1986-04-17
IT8522346A0 (it) 1985-10-03

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