IT8119108A0 - Dispositivo per la formazione epitassiale di uno strato dimateriale semiconduttore. - Google Patents

Dispositivo per la formazione epitassiale di uno strato dimateriale semiconduttore.

Info

Publication number
IT8119108A0
IT8119108A0 IT8119108A IT1910881A IT8119108A0 IT 8119108 A0 IT8119108 A0 IT 8119108A0 IT 8119108 A IT8119108 A IT 8119108A IT 1910881 A IT1910881 A IT 1910881A IT 8119108 A0 IT8119108 A0 IT 8119108A0
Authority
IT
Italy
Prior art keywords
epitassical
formation
layer
semiconductor material
semiconductor
Prior art date
Application number
IT8119108A
Other languages
English (en)
Other versions
IT1135014B (it
Inventor
Willem Jochem Leswin
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8119108A0 publication Critical patent/IT8119108A0/it
Application granted granted Critical
Publication of IT1135014B publication Critical patent/IT1135014B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT19108/81A 1980-01-16 1981-01-13 Dispositivo per la formazione epitassiale di uno strato di materiale semiconduttore IT1135014B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE8000256,A NL185375C (nl) 1980-01-16 1980-01-16 Inrichting voor het epitaxiaal aanbrengen van een laag halfgeleidermateriaal.

Publications (2)

Publication Number Publication Date
IT8119108A0 true IT8119108A0 (it) 1981-01-13
IT1135014B IT1135014B (it) 1986-08-20

Family

ID=19834680

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19108/81A IT1135014B (it) 1980-01-16 1981-01-13 Dispositivo per la formazione epitassiale di uno strato di materiale semiconduttore

Country Status (11)

Country Link
US (1) US4357897A (it)
JP (1) JPS56105629A (it)
AU (1) AU539832B2 (it)
CA (1) CA1181328A (it)
CH (1) CH651964A5 (it)
DE (1) DE3100330A1 (it)
FR (1) FR2473561A1 (it)
GB (1) GB2068257B (it)
IT (1) IT1135014B (it)
NL (1) NL185375C (it)
SE (1) SE8100138L (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE443583B (sv) * 1982-11-12 1986-03-03 Ericsson Telefon Ab L M Anordning vid vetskefasepitaxi
US4594126A (en) * 1983-09-12 1986-06-10 Cook Melvin S Growth of thin epitaxial films on moving substrates from flowing solutions
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
KR880010481A (ko) * 1987-02-21 1988-10-10 강진구 액상 박막 결정 성장방법 및 장치
DE3834930A1 (de) * 1988-10-13 1990-04-19 Siemens Ag Schiebetiegel fuer fluessigphasenepitaxie
JPH02291116A (ja) * 1989-04-28 1990-11-30 Toshiba Corp 液層エピタキシャル成長方法
KR950006313B1 (ko) * 1991-05-16 1995-06-13 삼성전자주식회사 액상 에피택시장치 및 에피택셜층의 성장방법
FR2763608B1 (fr) * 1997-05-21 1999-06-18 Commissariat Energie Atomique Nacelle d'epitaxie pour depot d'une couche de cdhgte par epitaxie en phase liquide sur un heterosubstrat et procede de depot de cdhgte sur un heterosubstrat utilisant cette nacelle
TW460604B (en) 1998-10-13 2001-10-21 Winbond Electronics Corp A one-sided and mass production method of liquid phase deposition

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
BE791927A (fr) * 1971-11-29 1973-03-16 Western Electric Co Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs

Also Published As

Publication number Publication date
GB2068257A (en) 1981-08-12
NL185375C (nl) 1990-03-16
DE3100330A1 (de) 1981-12-17
FR2473561A1 (fr) 1981-07-17
AU6619781A (en) 1982-04-22
NL185375B (nl) 1989-10-16
CH651964A5 (de) 1985-10-15
US4357897A (en) 1982-11-09
NL8000256A (nl) 1981-08-17
AU539832B2 (en) 1984-10-18
FR2473561B1 (it) 1985-02-15
CA1181328A (en) 1985-01-22
JPS56105629A (en) 1981-08-22
SE8100138L (sv) 1981-07-17
IT1135014B (it) 1986-08-20
GB2068257B (en) 1983-11-02

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960130