IT8023018A0 - Metodo per riparare interruzioni e cortocircuiti nei tracciati conduttivi di circuiti integrati. - Google Patents

Metodo per riparare interruzioni e cortocircuiti nei tracciati conduttivi di circuiti integrati.

Info

Publication number
IT8023018A0
IT8023018A0 IT8023018A IT2301880A IT8023018A0 IT 8023018 A0 IT8023018 A0 IT 8023018A0 IT 8023018 A IT8023018 A IT 8023018A IT 2301880 A IT2301880 A IT 2301880A IT 8023018 A0 IT8023018 A0 IT 8023018A0
Authority
IT
Italy
Prior art keywords
interruptions
repairing
conductive traces
circuits
integrated circuits
Prior art date
Application number
IT8023018A
Other languages
English (en)
Other versions
IT1151015B (it
Inventor
Dougherty William Edwin Jr
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT8023018A0 publication Critical patent/IT8023018A0/it
Application granted granted Critical
Publication of IT1151015B publication Critical patent/IT1151015B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/225—Correcting or repairing of printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/17—Post-manufacturing processes
    • H05K2203/173—Adding connections between adjacent pads or conductors, e.g. for modifying or repairing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/17—Post-manufacturing processes
    • H05K2203/175—Configurations of connections suitable for easy deletion, e.g. modifiable circuits or temporary conductors for electroplating; Processes for deleting connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4685—Manufacturing of cross-over conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
IT23018/80A 1979-07-30 1980-06-26 Metodo per riparare interruzioni e cortocircuiti nei tracciati conduttivi di circuiti integrati IT1151015B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/061,951 US4259367A (en) 1979-07-30 1979-07-30 Fine line repair technique

Publications (2)

Publication Number Publication Date
IT8023018A0 true IT8023018A0 (it) 1980-06-26
IT1151015B IT1151015B (it) 1986-12-17

Family

ID=22039231

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23018/80A IT1151015B (it) 1979-07-30 1980-06-26 Metodo per riparare interruzioni e cortocircuiti nei tracciati conduttivi di circuiti integrati

Country Status (6)

Country Link
US (1) US4259367A (it)
EP (1) EP0023294B1 (it)
JP (1) JPS5621347A (it)
CA (1) CA1139018A (it)
DE (1) DE3070754D1 (it)
IT (1) IT1151015B (it)

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US4810663A (en) * 1981-12-07 1989-03-07 Massachusetts Institute Of Technology Method of forming conductive path by low power laser pulse
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
US4594471A (en) * 1983-07-13 1986-06-10 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US4713518A (en) * 1984-06-08 1987-12-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device manufacturing methods
US4665295A (en) * 1984-08-02 1987-05-12 Texas Instruments Incorporated Laser make-link programming of semiconductor devices
JPS6130672A (ja) * 1984-07-23 1986-02-12 Hitachi Ltd 選択的加工方法
JPS61161740A (ja) * 1985-01-07 1986-07-22 モトロ−ラ・インコ−ポレ−テツド 多層金属化集積回路およびその製造方法
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
JPS61202454A (ja) * 1985-03-05 1986-09-08 Mitsubishi Electric Corp アルミニウム配線の被切断回路の構造と切断方法
JPH0740101B2 (ja) * 1985-04-23 1995-05-01 旭硝子株式会社 薄膜トランジスタ
US4681795A (en) * 1985-06-24 1987-07-21 The United States Of America As Represented By The Department Of Energy Planarization of metal films for multilevel interconnects
US4674176A (en) * 1985-06-24 1987-06-23 The United States Of America As Represented By The United States Department Of Energy Planarization of metal films for multilevel interconnects by pulsed laser heating
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
US4683652A (en) * 1986-08-22 1987-08-04 Hatfield Jerry L Printed circuit repair process
IL82113A (en) * 1987-04-05 1992-08-18 Zvi Orbach Fabrication of customized integrated circuits
JP2698357B2 (ja) * 1987-08-17 1998-01-19 キヤノン株式会社 電極間の短絡部分離法及び液晶パネルの製造法
JP2594972B2 (ja) * 1987-09-11 1997-03-26 株式会社日立製作所 配線形成方法およびその装置
JPH0680662B2 (ja) * 1987-12-02 1994-10-12 株式会社日立製作所 Ｉｃ素子の修正方法
US4849363A (en) * 1988-03-18 1989-07-18 Digital Equipment Corporation Integrated circuit having laser-alterable metallization layer
US4908938A (en) * 1988-05-26 1990-03-20 Siemens Aktiengesellschaft Method for repairing interconnect interruptions by bridging with congruent preforms
US5182230A (en) * 1988-07-25 1993-01-26 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
US5171709A (en) * 1988-07-25 1992-12-15 International Business Machines Corporation Laser methods for circuit repair on integrated circuits and substrates
US4919971A (en) * 1988-09-23 1990-04-24 International Business Machines Corporation Self-induced repairing of conductor lines
US4880959A (en) * 1988-10-26 1989-11-14 International Business Machines Corporation Process for interconnecting thin-film electrical circuits
US4974048A (en) * 1989-03-10 1990-11-27 The Boeing Company Integrated circuit having reroutable conductive paths
JP2567952B2 (ja) * 1989-09-05 1996-12-25 株式会社日立製作所 Ｌｓｉ補修配線方法
US4994154A (en) * 1990-02-06 1991-02-19 International Business Machines Corporation High frequency electrochemical repair of open circuits
US5077891A (en) * 1990-04-30 1992-01-07 Ag Communication Systems Corporation Method for reconstructing the conductor traces of a printed circuit board assembly
JP3325456B2 (ja) * 1996-05-22 2002-09-17 株式会社アドバンテスト メモリリペア方法ならびにそのメモリリペア方法が適用される電子ビームメモリリペア装置およびメモリ冗長回路
JP2731288B2 (ja) * 1990-08-28 1998-03-25 株式会社日立製作所 多層配線方法
US5060370A (en) * 1990-10-15 1991-10-29 Scales Jr James W Modification method for etched printed circuit boards
US5153408A (en) * 1990-10-31 1992-10-06 International Business Machines Corporation Method and structure for repairing electrical lines
US5288007A (en) * 1991-10-04 1994-02-22 International Business Machine Corporation Apparatus and methods for making simultaneous electrical connections
US5193732A (en) * 1991-10-04 1993-03-16 International Business Machines Corporation Apparatus and methods for making simultaneous electrical connections
US5391516A (en) * 1991-10-10 1995-02-21 Martin Marietta Corp. Method for enhancement of semiconductor device contact pads
US5455461A (en) * 1992-09-21 1995-10-03 Fujitsu Limited Semiconductor device having reformed pad
JPH06110069A (ja) * 1992-09-29 1994-04-22 Matsushita Electric Ind Co Ltd 電子部品の欠陥修復方法および欠陥修復装置
DE4316964C2 (de) * 1993-02-27 2002-01-31 Saint Gobain Sekurit D Gmbh Verfahren zur Herstellung einer heizbaren Verbundglasscheibe mit in der thermoplastischen Zwischenschicht angeordneten Metalldrähten und Verwendung einer elektronischen Schaltung zur Durchführung des Verfahrens
US5532853A (en) * 1993-03-04 1996-07-02 Samsung Electronics Co., Ltd. Reparable display device matrix for repairing the electrical connection of a bonding pad to its associated signal line
JPH06302603A (ja) * 1993-03-26 1994-10-28 Hitachi Ltd Ｉｃ素子
JPH06283534A (ja) * 1993-03-26 1994-10-07 Hitachi Ltd Ｉｃ素子における配線接続装置
US5384953A (en) * 1993-07-21 1995-01-31 International Business Machines Corporation Structure and a method for repairing electrical lines
US5518956A (en) * 1993-09-02 1996-05-21 General Electric Company Method of isolating vertical shorts in an electronic array using laser ablation
US5446961A (en) * 1993-10-15 1995-09-05 International Business Machines Corporation Method for repairing semiconductor substrates
JP2604992B2 (ja) * 1994-12-28 1997-04-30 株式会社日立製作所 Ｉｃ素子における付加配線形成方法
US5817533A (en) * 1996-07-29 1998-10-06 Fujitsu Limited High-yield methods of fabricating large substrate capacitors
US6057221A (en) * 1997-04-03 2000-05-02 Massachusetts Institute Of Technology Laser-induced cutting of metal interconnect
US5931382A (en) * 1997-12-19 1999-08-03 Aeromix Systems, Inc. Aerating fountain with selectable nozzle
US20110101534A1 (en) * 2009-11-04 2011-05-05 International Business Machines Corporation Automated short length wire shape strapping and methods of fabricting the same
US8580675B2 (en) * 2011-03-02 2013-11-12 Texas Instruments Incorporated Two-track cross-connect in double-patterned structure using rectangular via
KR102005483B1 (ko) * 2012-10-19 2019-07-31 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그의 수리 방법
US8772053B2 (en) * 2012-11-12 2014-07-08 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method and device for repairing open line defect in liquid crystal display array substrate
FR3143178A1 (fr) * 2022-12-08 2024-06-14 Airbus (S.A.S.) Pièce comprenant en surface un film intégrant au moins un circuit électronique imprimé pourvu de bornes de raccordement, procédé de réparation d’une telle pièce et pièce ainsi réparée

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US3506506A (en) * 1967-07-14 1970-04-14 Ibm Capacitor defect isolation
US3597834A (en) * 1968-02-14 1971-08-10 Texas Instruments Inc Method in forming electrically continuous circuit through insulating layer
GB1306189A (it) * 1968-09-25 1973-02-07
US3559281A (en) * 1968-11-27 1971-02-02 Motorola Inc Method of reclaiming processed semiconductior wafers
US3539880A (en) * 1968-12-31 1970-11-10 Westinghouse Electric Corp Mis-fet permanent repair physical device
US3705047A (en) * 1969-05-23 1972-12-05 Libbey Owens Ford Co Method of repairing electrically conducting frit circuits
US3861023A (en) * 1973-04-30 1975-01-21 Hughes Aircraft Co Fully repairable integrated circuit interconnections
US3923567A (en) * 1974-08-09 1975-12-02 Silicon Materials Inc Method of reclaiming a semiconductor wafer

Also Published As

Publication number Publication date
CA1139018A (en) 1983-01-04
JPS5621347A (en) 1981-02-27
DE3070754D1 (en) 1985-07-18
EP0023294A2 (en) 1981-02-04
EP0023294B1 (en) 1985-06-12
EP0023294A3 (en) 1983-08-31
IT1151015B (it) 1986-12-17
US4259367A (en) 1981-03-31
JPS6360537B2 (it) 1988-11-24

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