IT7924409A0 - Procedimento per la deposizione di silicio in forma microcristallina. - Google Patents

Procedimento per la deposizione di silicio in forma microcristallina.

Info

Publication number
IT7924409A0
IT7924409A0 IT7924409A IT2440979A IT7924409A0 IT 7924409 A0 IT7924409 A0 IT 7924409A0 IT 7924409 A IT7924409 A IT 7924409A IT 2440979 A IT2440979 A IT 2440979A IT 7924409 A0 IT7924409 A0 IT 7924409A0
Authority
IT
Italy
Prior art keywords
deposition
silicon
procedure
microcrystalline form
microcrystalline
Prior art date
Application number
IT7924409A
Other languages
English (en)
Other versions
IT1122593B (it
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IT7924409A0 publication Critical patent/IT7924409A0/it
Application granted granted Critical
Publication of IT1122593B publication Critical patent/IT1122593B/it

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
IT24409/79A 1978-07-19 1979-07-17 Procedimento per la deposizione di silicio in forma microcristallina IT1122593B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782831816 DE2831816A1 (de) 1978-07-19 1978-07-19 Verfahren zum abscheiden von silicium in feinkristalliner form

Publications (2)

Publication Number Publication Date
IT7924409A0 true IT7924409A0 (it) 1979-07-17
IT1122593B IT1122593B (it) 1986-04-23

Family

ID=6044831

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24409/79A IT1122593B (it) 1978-07-19 1979-07-17 Procedimento per la deposizione di silicio in forma microcristallina

Country Status (5)

Country Link
US (1) US4426408A (it)
JP (1) JPS5515999A (it)
DE (1) DE2831816A1 (it)
DK (1) DK302879A (it)
IT (1) IT1122593B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0640835B2 (ja) * 1980-11-11 1994-06-01 出光興産株式会社 好気性微生物生菌数の迅速測定法
JPS58116700A (ja) * 1981-12-29 1983-07-11 Ajinomoto Co Inc 迅速微生物検査法
IL117770A0 (en) * 1996-04-02 1996-08-04 Levtec Ltd Method and apparatus for growing of extended crystals
WO1999031013A1 (en) * 1997-12-15 1999-06-24 Advanced Silicon Materials, Inc. Chemical vapor deposition system for polycrystalline silicon rod production
WO2007120871A2 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process
DE102007023041A1 (de) * 2007-05-16 2008-11-20 Wacker Chemie Ag Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung
KR101623458B1 (ko) * 2008-03-26 2016-05-23 지티에이티 코포레이션 화학 증착 반응기의 가스 분배 시스템 및 방법
JP5719282B2 (ja) * 2011-11-29 2015-05-13 信越化学工業株式会社 多結晶シリコンの製造方法
JP5792658B2 (ja) 2012-02-23 2015-10-14 信越化学工業株式会社 多結晶シリコン棒の製造方法
JP5792657B2 (ja) 2012-02-23 2015-10-14 信越化学工業株式会社 多結晶シリコン棒の製造方法
JP6038625B2 (ja) * 2012-12-10 2016-12-07 株式会社トクヤマ 多結晶シリコンロッドの製造方法と製造装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1123300B (de) 1960-06-03 1962-02-08 Siemens Ag Verfahren zur Herstellung von Silicium oder Germanium
NL131267C (it) 1960-06-14 1900-01-01
DE1444526B2 (de) 1962-08-24 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Verfahren zum Abscheiden eines halb leitenden Elements
US3536522A (en) 1968-05-21 1970-10-27 Texas Instruments Inc Method for purification of reaction gases
JPS5019013U (it) * 1973-06-15 1975-03-03
DE2727305A1 (de) 1977-06-16 1979-01-04 Siemens Ag Verfahren zum abscheiden von feinkristallinem silicium aus der gasphase an der oberflaeche eines erhitzten traegerkoerpers

Also Published As

Publication number Publication date
DK302879A (da) 1980-01-20
US4426408A (en) 1984-01-17
DE2831816C2 (it) 1987-08-06
JPS5515999A (en) 1980-02-04
DE2831816A1 (de) 1980-01-31
JPS6156162B2 (it) 1986-12-01
IT1122593B (it) 1986-04-23

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