IT7924401A0 - Procedimento per la purificazione e coltivazione sequenziale di cristalli di silicio. - Google Patents

Procedimento per la purificazione e coltivazione sequenziale di cristalli di silicio.

Info

Publication number
IT7924401A0
IT7924401A0 IT7924401A IT2440179A IT7924401A0 IT 7924401 A0 IT7924401 A0 IT 7924401A0 IT 7924401 A IT7924401 A IT 7924401A IT 2440179 A IT2440179 A IT 2440179A IT 7924401 A0 IT7924401 A0 IT 7924401A0
Authority
IT
Italy
Prior art keywords
purification
procedure
silicon crystals
cultivation
sequential
Prior art date
Application number
IT7924401A
Other languages
English (en)
Other versions
IT1122585B (it
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of IT7924401A0 publication Critical patent/IT7924401A0/it
Application granted granted Critical
Publication of IT1122585B publication Critical patent/IT1122585B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT24401/79A 1978-07-18 1979-07-17 Procedimento per la purificazione e coltivazione sequenziale di cristalli di silicio IT1122585B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/925,733 US4200621A (en) 1978-07-18 1978-07-18 Sequential purification and crystal growth

Publications (2)

Publication Number Publication Date
IT7924401A0 true IT7924401A0 (it) 1979-07-17
IT1122585B IT1122585B (it) 1986-04-23

Family

ID=25452160

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24401/79A IT1122585B (it) 1978-07-18 1979-07-17 Procedimento per la purificazione e coltivazione sequenziale di cristalli di silicio

Country Status (4)

Country Link
US (1) US4200621A (it)
JP (1) JPS5532787A (it)
DE (1) DE2929089A1 (it)
IT (1) IT1122585B (it)

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JPS58181799A (ja) * 1982-04-16 1983-10-24 Nippon Telegr & Teleph Corp <Ntt> 硼素を添加したＧａＡｓ単結晶の製造方法
DE3333960A1 (de) * 1983-09-20 1985-04-04 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
JPS6153199A (ja) * 1984-08-21 1986-03-17 Matsushima Kogyo Co Ltd ベリル単結晶の育成方法
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
DE68908872T2 (de) * 1989-02-03 1994-02-10 Mitsubishi Metal Corp Verfahren zum Ziehen von Einkristallen.
US5436164A (en) * 1990-11-15 1995-07-25 Hemlock Semi-Conductor Corporation Analytical method for particulate silicon
DE4105910A1 (de) * 1991-02-26 1992-08-27 Bayer Ag Verfahren zur herstellung von metallfolien sowie deren verwendung
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US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
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WO1998035074A1 (en) * 1997-02-06 1998-08-13 Crysteco, Inc. Method and apparatus for growing crystals
US6319313B1 (en) * 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
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US20110263126A1 (en) 2000-11-22 2011-10-27 Sumco Corporation Method for manufacturing a silicon wafer
DE10058320B8 (de) * 2000-11-24 2006-12-28 Mitsubishi Materials Silicon Corp. Herstellungsverfahren für Silicium-Wafer
EP1249520A1 (en) * 2001-04-09 2002-10-16 Optoscint Inc. Apparatus and method for the purification of a material
AU2003208106A1 (en) * 2002-02-04 2003-09-02 Sharp Kabushiki Kaisha Silicon purifying method, slag for purifying silicon, and purified silicon
US20060281623A1 (en) * 2005-06-10 2006-12-14 General Electric Company Free-formed quartz glass ingots and method for making the same
JP4689373B2 (ja) * 2005-07-04 2011-05-25 シャープ株式会社 シリコンの再利用方法
JP5374673B2 (ja) * 2006-04-04 2013-12-25 シリコール マテリアルズ インク 珪素精製方法
CN101868422B (zh) * 2007-09-13 2013-10-09 费罗索勒硅业公司 用于从冶金级硅制备中等和高纯度硅的方法
JP5400782B2 (ja) 2007-10-03 2014-01-29 シリコア マテリアルズ インコーポレイテッド シリコン結晶を得るためのシリコン粉末の処理方法
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US9567691B2 (en) 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
DE102008036143A1 (de) * 2008-08-01 2010-02-04 Berlinsolar Gmbh Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
US8637761B2 (en) * 2008-09-16 2014-01-28 Silevo, Inc. Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
JP4307516B1 (ja) * 2008-11-25 2009-08-05 佑吉 堀岡 結晶成長装置及び結晶成長方法
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
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US20110120365A1 (en) * 2009-11-25 2011-05-26 Hui She Process for removal of contaminants from a melt of non-ferrous metals and apparatus for growing high purity silicon crystals
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US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
NO339608B1 (no) 2013-09-09 2017-01-09 Elkem Solar As Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller
NO336720B1 (no) * 2013-09-09 2015-10-26 Elkem Solar As Fremgangsmåte for forbedring av effektiviteten av solceller.
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
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US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
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JP6919633B2 (ja) * 2018-08-29 2021-08-18 信越半導体株式会社 単結晶育成方法
CN114735707B (zh) * 2022-04-29 2023-04-25 成都理工大学 一种炉外精炼去除工业硅熔体中磷、硼杂质的方法

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US2866701A (en) * 1956-05-10 1958-12-30 Vanadium Corp Of America Method of purifying silicon and ferrosilicon
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
DE1098931B (de) * 1958-07-03 1961-02-09 Wacker Chemie Gmbh Verfahren zur Reinigung von geschmolzenem Silicium
US4124410A (en) * 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates

Also Published As

Publication number Publication date
JPS5532787A (en) 1980-03-07
US4200621A (en) 1980-04-29
DE2929089A1 (de) 1980-01-31
IT1122585B (it) 1986-04-23

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