IT1255920B - NAND MASK READING MEMORY ONLY - Google Patents

NAND MASK READING MEMORY ONLY

Info

Publication number
IT1255920B
IT1255920B ITMI922458A ITMI922458A IT1255920B IT 1255920 B IT1255920 B IT 1255920B IT MI922458 A ITMI922458 A IT MI922458A IT MI922458 A ITMI922458 A IT MI922458A IT 1255920 B IT1255920 B IT 1255920B
Authority
IT
Italy
Prior art keywords
string selection
reading memory
transistors
depletion
series
Prior art date
Application number
ITMI922458A
Other languages
Italian (it)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of ITMI922458A0 publication Critical patent/ITMI922458A0/en
Publication of ITMI922458A1 publication Critical patent/ITMI922458A1/en
Application granted granted Critical
Publication of IT1255920B publication Critical patent/IT1255920B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Memoria di sola lettura a maschere di tipo NAND comprendente un primo ed un secondo transistor di selezione di stringa di modalità di impoverimento o svuotamento o depletion e di rinforzo collegati in serie con linee di bit, ed una pluralità di transistor a celle collegati in serie fra i transistor di selezione di stringa ed un terminale di tensione di terra, in cui la lunghezza del canale dei transistor di selezione di stringa di modalità di rinforzo è maggiore di quella dei transistor di selezione di stringa di modalità di impovimento o depletion, in modo da impedire che nelle stringhe non selezionate scorra una corrente di dispersione.NAND mask read-only memory comprising a first and a second string selection transistor for depletion or emptying or depletion and reinforcement modes connected in series with bit lines, and a plurality of cell transistors connected in series between the string selection transistors and an earth voltage terminal, wherein the channel length of the reinforcement mode string selection transistors is greater than that of the string selection or transistor mode selection transistors, so as to prevent leakage current from flowing in unselected strings.

ITMI922458A 1991-10-29 1992-10-27 NAND MASK READING MEMORY ONLY IT1255920B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR910019085 1991-10-29

Publications (3)

Publication Number Publication Date
ITMI922458A0 ITMI922458A0 (en) 1992-10-27
ITMI922458A1 ITMI922458A1 (en) 1994-04-27
IT1255920B true IT1255920B (en) 1995-11-17

Family

ID=19321940

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922458A IT1255920B (en) 1991-10-29 1992-10-27 NAND MASK READING MEMORY ONLY

Country Status (7)

Country Link
JP (1) JPH05218328A (en)
KR (1) KR960005564B1 (en)
CN (1) CN1072040A (en)
DE (1) DE4229129A1 (en)
FR (1) FR2683078A1 (en)
GB (1) GB2261090A (en)
IT (1) IT1255920B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358148B1 (en) * 1995-05-15 2003-01-08 주식회사 하이닉스반도체 Mask rom
KR100358139B1 (en) * 1995-07-11 2003-01-15 주식회사 하이닉스반도체 Mask rom
KR980005033A (en) * 1996-06-27 1998-03-30 김주용 Mask ROM device
EP0951738A1 (en) * 1996-12-17 1999-10-27 Siemens Aktiengesellschaft Arrangement for controlling parallel lines in a storage cell arrangement
JP2005243127A (en) * 2004-02-25 2005-09-08 Sanyo Electric Co Ltd Ultraviolet erasable semiconductor memory
KR101094840B1 (en) * 2005-07-12 2011-12-16 삼성전자주식회사 NAND-type FLASH Memory Device And Method Of Fabricating The Same
CN102214485B (en) * 2010-04-02 2016-03-30 台湾积体电路制造股份有限公司 ROM (read-only memory) and ROM (read-only memory) method of operating

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4305139A (en) * 1979-12-26 1981-12-08 International Business Machines Corporation State detection for storage cells
US4980861A (en) * 1987-01-16 1990-12-25 Microchip Technology Incorporated NAND stack ROM
JPH01276757A (en) * 1988-04-28 1989-11-07 Fujitsu Ltd Manufacture of semiconductor memory device
KR910004166B1 (en) * 1988-12-27 1991-06-22 삼성전자주식회사 Eeprom having nand-cells
JP2509707B2 (en) * 1989-09-04 1996-06-26 株式会社東芝 Method for manufacturing semiconductor device
KR940004609B1 (en) * 1991-09-04 1994-05-25 삼성전자 주식회사 Mask read only memory

Also Published As

Publication number Publication date
FR2683078A1 (en) 1993-04-30
JPH05218328A (en) 1993-08-27
DE4229129A1 (en) 1993-05-06
ITMI922458A1 (en) 1994-04-27
GB2261090A (en) 1993-05-05
KR960005564B1 (en) 1996-04-26
CN1072040A (en) 1993-05-12
KR930009080A (en) 1993-05-22
GB9222728D0 (en) 1992-12-09
ITMI922458A0 (en) 1992-10-27

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Legal Events

Date Code Title Description
0001 Granted