IT1246772B - ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno'' - Google Patents

''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''

Info

Publication number
IT1246772B
IT1246772B IT02253690A IT2253690A IT1246772B IT 1246772 B IT1246772 B IT 1246772B IT 02253690 A IT02253690 A IT 02253690A IT 2253690 A IT2253690 A IT 2253690A IT 1246772 B IT1246772 B IT 1246772B
Authority
IT
Italy
Prior art keywords
waterproof
hydrogen
coating layer
external coating
graphite
Prior art date
Application number
IT02253690A
Other languages
English (en)
Italian (it)
Other versions
IT9022536A1 (it
IT9022536A0 (it
Inventor
Michael Fenton Jernegan
Lyle Cook Winterton
Original Assignee
Advanced Silicon Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Silicon Materials Inc filed Critical Advanced Silicon Materials Inc
Publication of IT9022536A0 publication Critical patent/IT9022536A0/it
Publication of IT9022536A1 publication Critical patent/IT9022536A1/it
Application granted granted Critical
Publication of IT1246772B publication Critical patent/IT1246772B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
IT02253690A 1989-12-26 1990-12-24 ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno'' IT1246772B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45673089A 1989-12-26 1989-12-26

Publications (3)

Publication Number Publication Date
IT9022536A0 IT9022536A0 (it) 1990-12-24
IT9022536A1 IT9022536A1 (it) 1992-06-24
IT1246772B true IT1246772B (it) 1994-11-26

Family

ID=23813914

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02253690A IT1246772B (it) 1989-12-26 1990-12-24 ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''

Country Status (5)

Country Link
US (1) US5284640A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2671235B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR950013069B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE4041901A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1246772B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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* Cited by examiner, † Cited by third party
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IT1246772B (it) * 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''
EP0529593B1 (en) * 1991-08-29 1996-02-14 Ucar Carbon Technology Corporation A glass carbon coated graphite chuck for use in producing polycrystalline silicon
RU2136590C1 (ru) * 1998-10-12 1999-09-10 Государственный научный центр РФ Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения поликристаллического кремния
RU2191847C2 (ru) * 2000-03-16 2002-10-27 Акционерное общество открытого типа "НИИ молекулярной электроники и завод "Микрон" Способ формирования слоев поликристаллического кремния
US20040173597A1 (en) * 2003-03-03 2004-09-09 Manoj Agrawal Apparatus for contacting gases at high temperature
EP1772429A4 (en) * 2004-06-22 2010-01-06 Shin Etsu Film Co Ltd METHOD FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON FOR SOLAR CELLS MADE ACCORDING TO THE PROCESS
RU2278075C2 (ru) * 2004-08-16 2006-06-20 Федеральное государственное унитарное предприятие "Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Способ получения поликристаллического кремния
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
EP2108619B1 (en) * 2008-03-21 2011-06-22 Mitsubishi Materials Corporation Polycrystalline silicon reactor
RU2010143546A (ru) * 2008-03-26 2012-05-10 ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) Реакторная система с золотым покрытием для осаждения поликристаллического кремния и способ
TWI458854B (zh) * 2008-06-23 2014-11-01 Gtat Corp 在化學氣相沉積反應器中用於管絲的夾頭及電橋之連接點
DE102009021825B3 (de) * 2009-05-18 2010-08-05 Kgt Graphit Technologie Gmbh Aufnahmekegel für Silizium-Anzuchtstäbe
CA2777097A1 (en) * 2009-10-09 2011-04-14 Hemlock Semiconductor Corporation Cvd apparatus with electrode
CA2777101A1 (en) * 2009-10-09 2011-04-14 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
EP2486167A1 (en) * 2009-10-09 2012-08-15 Hemlock Semiconductor Corporation Cvd apparatus
DE102010003064A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Graphitelektrode
DE102010003068A1 (de) 2010-03-19 2011-09-22 Wacker Chemie Ag Verfahren zur Herstellung von rissfreien polykristallinen Siliciumstäben
DE102010003069A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Kegelförmige Graphitelektrode mit hochgezogenem Rand
US10494714B2 (en) * 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
DE102011084372A1 (de) 2011-10-12 2012-02-09 Wacker Chemie Ag Vorrichtung für die Abscheidung von polykristallinem Silicium auf Dünnstäben
KR101435875B1 (ko) * 2012-03-12 2014-09-01 (주)아폴로테크 폴리실리콘 제조용 흑연척 재활용 방법
US20150232987A1 (en) * 2012-07-10 2015-08-20 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and a socket for use therein
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
JP2016016999A (ja) 2014-07-04 2016-02-01 信越化学工業株式会社 多結晶シリコン棒製造用のシリコン芯線および多結晶シリコン棒の製造装置
JP6373724B2 (ja) * 2014-11-04 2018-08-15 株式会社トクヤマ 芯線ホルダ及びシリコンの製造方法
CN105384172B (zh) * 2015-12-29 2017-09-22 哈尔滨工业大学 一种改良西门子法多晶硅还原炉用石墨夹头及其使用方法
JP7178209B2 (ja) * 2018-08-22 2022-11-25 株式会社Uacj 熱交換器の製造方法

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DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
US3329527A (en) * 1963-09-13 1967-07-04 Monsanto Co Graphite heating elements and method of conditioning the heating surfaces thereof
US3406044A (en) * 1965-01-04 1968-10-15 Monsanto Co Resistance heating elements and method of conditioning the heating surfaces thereof
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
JPS53108029A (en) * 1977-03-03 1978-09-20 Komatsu Mfg Co Ltd Method of making high purity silicon having uniform shape
US4621017A (en) * 1982-04-15 1986-11-04 Kennecott Corporation Corrosion and wear resistant graphite material and method of manufacture
JPS63123806A (ja) * 1986-11-11 1988-05-27 Mitsubishi Metal Corp 多結晶シリコンの製造方法
IT1246772B (it) * 1989-12-26 1994-11-26 Advanced Silicon Materials Inc ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno''

Also Published As

Publication number Publication date
JPH069295A (ja) 1994-01-18
IT9022536A1 (it) 1992-06-24
KR910011636A (ko) 1991-08-07
KR950013069B1 (ko) 1995-10-24
US5284640A (en) 1994-02-08
IT9022536A0 (it) 1990-12-24
JP2671235B2 (ja) 1997-10-29
DE4041901C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-04-08
DE4041901A1 (de) 1991-06-27

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227