IT1245688B - Struttura di compensazione in temperatura della corrente inversa di saturazione in transistori bipolari - Google Patents

Struttura di compensazione in temperatura della corrente inversa di saturazione in transistori bipolari

Info

Publication number
IT1245688B
IT1245688B ITTO910311A ITTO910311A IT1245688B IT 1245688 B IT1245688 B IT 1245688B IT TO910311 A ITTO910311 A IT TO910311A IT TO910311 A ITTO910311 A IT TO910311A IT 1245688 B IT1245688 B IT 1245688B
Authority
IT
Italy
Prior art keywords
emitter
base
saturation current
compensated
transistor
Prior art date
Application number
ITTO910311A
Other languages
English (en)
Inventor
Fabio Marchio'
Enrico Novarini
Giorgio Rossi
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to ITTO910311A priority Critical patent/IT1245688B/it
Publication of ITTO910311A0 publication Critical patent/ITTO910311A0/it
Priority to EP19920106612 priority patent/EP0510530A3/en
Priority to JP4103403A priority patent/JPH05173658A/ja
Priority to US07/872,462 priority patent/US5350998A/en
Publication of ITTO910311A1 publication Critical patent/ITTO910311A1/it
Application granted granted Critical
Publication of IT1245688B publication Critical patent/IT1245688B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

Per compensare la riduzione della corrente di emettitore (1E) all'aumentare della temperatura, dovuta alla corrente inversa di saturazione (1CS) che diviene significativa ad elevate temperature, al transistore bipolare da compensare (2, 3), presentante regioni di collettore, base ed emettitore definenti una giunzione base-emettitore, viene associato un diodo (11, 12) collegato in configurazione inversa in parallelo alla giunzione base-emettitore del transistore da compensare (2, 3) e avente corrente di saturazione (1S) sostanzialmente uguale a questo. Il diodo viene ottenuto corto-circuitando fra loro l'emettitore e la base di un ulteriore transistore bipolare (11, 12) uguale al transistore da compensare (2, 3) e collegato con il suo collettore e il suo emettitore rispettivamente alla base e all'emettitore del transistore da compensare.Fig. 2
ITTO910311A 1991-04-24 1991-04-24 Struttura di compensazione in temperatura della corrente inversa di saturazione in transistori bipolari IT1245688B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ITTO910311A IT1245688B (it) 1991-04-24 1991-04-24 Struttura di compensazione in temperatura della corrente inversa di saturazione in transistori bipolari
EP19920106612 EP0510530A3 (en) 1991-04-24 1992-04-16 Structure for temperature compensating the inverse saturation current of bipolar transistors
JP4103403A JPH05173658A (ja) 1991-04-24 1992-04-23 バイポーラ・トランジスタの逆飽和電流の温度補償装置
US07/872,462 US5350998A (en) 1991-04-24 1992-04-23 Structure for temperature compensating the inverse saturation current of bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO910311A IT1245688B (it) 1991-04-24 1991-04-24 Struttura di compensazione in temperatura della corrente inversa di saturazione in transistori bipolari

Publications (3)

Publication Number Publication Date
ITTO910311A0 ITTO910311A0 (it) 1991-04-24
ITTO910311A1 ITTO910311A1 (it) 1992-10-24
IT1245688B true IT1245688B (it) 1994-10-13

Family

ID=11409294

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO910311A IT1245688B (it) 1991-04-24 1991-04-24 Struttura di compensazione in temperatura della corrente inversa di saturazione in transistori bipolari

Country Status (4)

Country Link
US (1) US5350998A (it)
EP (1) EP0510530A3 (it)
JP (1) JPH05173658A (it)
IT (1) IT1245688B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459430A (en) * 1994-01-31 1995-10-17 Sgs-Thomson Microelectronics, Inc. Resistor ratioed current multiplier/divider
AT403532B (de) * 1994-06-24 1998-03-25 Semcotec Handel Verfahren zur temperaturstabilisierung
US5892388A (en) * 1996-04-15 1999-04-06 National Semiconductor Corporation Low power bias circuit using FET as a resistor
US6914484B2 (en) 2003-05-09 2005-07-05 Qualcomm, Incorporated Wideband constant-gain voltage amplifier
US7543253B2 (en) 2003-10-07 2009-06-02 Analog Devices, Inc. Method and apparatus for compensating for temperature drift in semiconductor processes and circuitry
US7576598B2 (en) 2006-09-25 2009-08-18 Analog Devices, Inc. Bandgap voltage reference and method for providing same
US8102201B2 (en) 2006-09-25 2012-01-24 Analog Devices, Inc. Reference circuit and method for providing a reference
US7714563B2 (en) 2007-03-13 2010-05-11 Analog Devices, Inc. Low noise voltage reference circuit
US7605578B2 (en) * 2007-07-23 2009-10-20 Analog Devices, Inc. Low noise bandgap voltage reference
US7612606B2 (en) 2007-12-21 2009-11-03 Analog Devices, Inc. Low voltage current and voltage generator
US7598799B2 (en) 2007-12-21 2009-10-06 Analog Devices, Inc. Bandgap voltage reference circuit
US7902912B2 (en) 2008-03-25 2011-03-08 Analog Devices, Inc. Bias current generator
US7880533B2 (en) 2008-03-25 2011-02-01 Analog Devices, Inc. Bandgap voltage reference circuit
US7750728B2 (en) 2008-03-25 2010-07-06 Analog Devices, Inc. Reference voltage circuit
WO2010058250A1 (en) * 2008-11-18 2010-05-27 Freescale Semiconductor, Inc. Complementary band-gap voltage reference circuit
US7961032B1 (en) * 2009-11-30 2011-06-14 International Business Machines Corporation Method of and structure for recovering gain in a bipolar transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3327131A (en) * 1961-12-29 1967-06-20 Ibm Current control system
FR2075099A5 (it) * 1970-01-31 1971-10-08 Licentia Gmbh
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
US3887863A (en) * 1973-11-28 1975-06-03 Analog Devices Inc Solid-state regulated voltage supply
US4471236A (en) * 1982-02-23 1984-09-11 Harris Corporation High temperature bias line stabilized current sources
US4816742A (en) * 1988-02-16 1989-03-28 North American Philips Corporation, Signetics Division Stabilized current and voltage reference sources

Also Published As

Publication number Publication date
JPH05173658A (ja) 1993-07-13
US5350998A (en) 1994-09-27
ITTO910311A1 (it) 1992-10-24
EP0510530A3 (en) 1993-06-09
EP0510530A2 (en) 1992-10-28
ITTO910311A0 (it) 1991-04-24

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Legal Events

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0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970429