EP0510530A3 - Structure for temperature compensating the inverse saturation current of bipolar transistors - Google Patents
Structure for temperature compensating the inverse saturation current of bipolar transistors Download PDFInfo
- Publication number
- EP0510530A3 EP0510530A3 EP19920106612 EP92106612A EP0510530A3 EP 0510530 A3 EP0510530 A3 EP 0510530A3 EP 19920106612 EP19920106612 EP 19920106612 EP 92106612 A EP92106612 A EP 92106612A EP 0510530 A3 EP0510530 A3 EP 0510530A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- bipolar transistors
- saturation current
- temperature compensating
- inverse saturation
- inverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
- G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO910311 | 1991-04-24 | ||
ITTO910311A IT1245688B (en) | 1991-04-24 | 1991-04-24 | TEMPERATURE COMPENSATION STRUCTURE OF THE REVERSE SATURATION CURRENT IN BIPOLAR TRANSISTORS |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0510530A2 EP0510530A2 (en) | 1992-10-28 |
EP0510530A3 true EP0510530A3 (en) | 1993-06-09 |
Family
ID=11409294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19920106612 Withdrawn EP0510530A3 (en) | 1991-04-24 | 1992-04-16 | Structure for temperature compensating the inverse saturation current of bipolar transistors |
Country Status (4)
Country | Link |
---|---|
US (1) | US5350998A (en) |
EP (1) | EP0510530A3 (en) |
JP (1) | JPH05173658A (en) |
IT (1) | IT1245688B (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459430A (en) * | 1994-01-31 | 1995-10-17 | Sgs-Thomson Microelectronics, Inc. | Resistor ratioed current multiplier/divider |
AT403532B (en) * | 1994-06-24 | 1998-03-25 | Semcotec Handel | METHOD FOR TEMPERATURE STABILIZATION |
US5892388A (en) * | 1996-04-15 | 1999-04-06 | National Semiconductor Corporation | Low power bias circuit using FET as a resistor |
US6914484B2 (en) * | 2003-05-09 | 2005-07-05 | Qualcomm, Incorporated | Wideband constant-gain voltage amplifier |
US7543253B2 (en) | 2003-10-07 | 2009-06-02 | Analog Devices, Inc. | Method and apparatus for compensating for temperature drift in semiconductor processes and circuitry |
US7576598B2 (en) | 2006-09-25 | 2009-08-18 | Analog Devices, Inc. | Bandgap voltage reference and method for providing same |
US8102201B2 (en) | 2006-09-25 | 2012-01-24 | Analog Devices, Inc. | Reference circuit and method for providing a reference |
US7714563B2 (en) | 2007-03-13 | 2010-05-11 | Analog Devices, Inc. | Low noise voltage reference circuit |
US7605578B2 (en) | 2007-07-23 | 2009-10-20 | Analog Devices, Inc. | Low noise bandgap voltage reference |
US7612606B2 (en) | 2007-12-21 | 2009-11-03 | Analog Devices, Inc. | Low voltage current and voltage generator |
US7598799B2 (en) | 2007-12-21 | 2009-10-06 | Analog Devices, Inc. | Bandgap voltage reference circuit |
US7750728B2 (en) | 2008-03-25 | 2010-07-06 | Analog Devices, Inc. | Reference voltage circuit |
US7902912B2 (en) | 2008-03-25 | 2011-03-08 | Analog Devices, Inc. | Bias current generator |
US7880533B2 (en) | 2008-03-25 | 2011-02-01 | Analog Devices, Inc. | Bandgap voltage reference circuit |
WO2010058250A1 (en) * | 2008-11-18 | 2010-05-27 | Freescale Semiconductor, Inc. | Complementary band-gap voltage reference circuit |
US7961032B1 (en) * | 2009-11-30 | 2011-06-14 | International Business Machines Corporation | Method of and structure for recovering gain in a bipolar transistor |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3327131A (en) * | 1961-12-29 | 1967-06-20 | Ibm | Current control system |
US3706047A (en) * | 1970-01-31 | 1972-12-12 | Licentia Gmbh | Amplifier circuit |
US3887863A (en) * | 1973-11-28 | 1975-06-03 | Analog Devices Inc | Solid-state regulated voltage supply |
US4028564A (en) * | 1971-09-22 | 1977-06-07 | Robert Bosch G.M.B.H. | Compensated monolithic integrated current source |
US4471236A (en) * | 1982-02-23 | 1984-09-11 | Harris Corporation | High temperature bias line stabilized current sources |
EP0329232A1 (en) * | 1988-02-16 | 1989-08-23 | Koninklijke Philips Electronics N.V. | Stabilized current and voltage reference sources |
-
1991
- 1991-04-24 IT ITTO910311A patent/IT1245688B/en active IP Right Grant
-
1992
- 1992-04-16 EP EP19920106612 patent/EP0510530A3/en not_active Withdrawn
- 1992-04-23 JP JP4103403A patent/JPH05173658A/en active Pending
- 1992-04-23 US US07/872,462 patent/US5350998A/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3327131A (en) * | 1961-12-29 | 1967-06-20 | Ibm | Current control system |
US3706047A (en) * | 1970-01-31 | 1972-12-12 | Licentia Gmbh | Amplifier circuit |
US4028564A (en) * | 1971-09-22 | 1977-06-07 | Robert Bosch G.M.B.H. | Compensated monolithic integrated current source |
US3887863A (en) * | 1973-11-28 | 1975-06-03 | Analog Devices Inc | Solid-state regulated voltage supply |
US4471236A (en) * | 1982-02-23 | 1984-09-11 | Harris Corporation | High temperature bias line stabilized current sources |
EP0329232A1 (en) * | 1988-02-16 | 1989-08-23 | Koninklijke Philips Electronics N.V. | Stabilized current and voltage reference sources |
Also Published As
Publication number | Publication date |
---|---|
EP0510530A2 (en) | 1992-10-28 |
ITTO910311A0 (en) | 1991-04-24 |
JPH05173658A (en) | 1993-07-13 |
IT1245688B (en) | 1994-10-13 |
ITTO910311A1 (en) | 1992-10-24 |
US5350998A (en) | 1994-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB NL SE |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
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AK | Designated contracting states |
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17P | Request for examination filed |
Effective date: 19930729 |
|
17Q | First examination report despatched |
Effective date: 19951011 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 19980116 |