IT1256732B - Protezione contro la polarizzazione inversa base-emettitore per circuiti integrati bicmos ic. - Google Patents

Protezione contro la polarizzazione inversa base-emettitore per circuiti integrati bicmos ic.

Info

Publication number
IT1256732B
IT1256732B ITMI922873A ITMI922873A IT1256732B IT 1256732 B IT1256732 B IT 1256732B IT MI922873 A ITMI922873 A IT MI922873A IT MI922873 A ITMI922873 A IT MI922873A IT 1256732 B IT1256732 B IT 1256732B
Authority
IT
Italy
Prior art keywords
emitter
bicmos
integrated circuits
protection against
transistor
Prior art date
Application number
ITMI922873A
Other languages
English (en)
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of ITMI922873A0 publication Critical patent/ITMI922873A0/it
Publication of ITMI922873A1 publication Critical patent/ITMI922873A1/it
Application granted granted Critical
Publication of IT1256732B publication Critical patent/IT1256732B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

Protezione emettitore-base per un primo transistor bipolare formato come parte di un circuito BICMOS. Un secondo transistor bipolare è formato nello stesso pozzo del primo transistor bipolare, entrambi i transistor utilizzando il pozzo come collettore. Un percorso di corrente attraverso il collettore-emettitore del secondo transistor fornisce corrente alla base del primo transistor mantenendo la tensione emettitore-base del primo transistor ad un potenziale inverso relativamente basso.
ITMI922873A 1991-12-20 1992-12-17 Protezione contro la polarizzazione inversa base-emettitore per circuiti integrati bicmos ic. IT1256732B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/811,827 US5227657A (en) 1991-12-20 1991-12-20 Base-emitter reverse bias protection for bicmos ic

Publications (3)

Publication Number Publication Date
ITMI922873A0 ITMI922873A0 (it) 1992-12-17
ITMI922873A1 ITMI922873A1 (it) 1994-06-17
IT1256732B true IT1256732B (it) 1995-12-15

Family

ID=25207704

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922873A IT1256732B (it) 1991-12-20 1992-12-17 Protezione contro la polarizzazione inversa base-emettitore per circuiti integrati bicmos ic.

Country Status (4)

Country Link
US (1) US5227657A (it)
JP (1) JPH05251646A (it)
GB (1) GB2262655B (it)
IT (1) IT1256732B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5629547A (en) * 1991-04-23 1997-05-13 Intel Corporation BICMOS process for counter doped collector
GB2255226B (en) * 1991-04-23 1995-03-01 Intel Corp Bicmos process for counter doped collector
JP2946306B2 (ja) * 1995-09-12 1999-09-06 セイコーインスツルメンツ株式会社 半導体温度センサーとその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3601625A (en) * 1969-06-25 1971-08-24 Texas Instruments Inc Mosic with protection against voltage surges
FR2468253A1 (fr) * 1979-10-22 1981-04-30 Radiotechnique Compelec Amplificateur de type darlington protege contre les surcharges de courant et sa realisation en structure semiconductrice integree
IT1210916B (it) * 1982-08-05 1989-09-29 Ates Componenti Elettron Transistore integrato protetto contro le sovratensioni.
JP2845869B2 (ja) * 1985-03-25 1999-01-13 株式会社日立製作所 半導体集積回路装置

Also Published As

Publication number Publication date
JPH05251646A (ja) 1993-09-28
GB9214183D0 (en) 1992-08-12
US5227657A (en) 1993-07-13
ITMI922873A1 (it) 1994-06-17
GB2262655A (en) 1993-06-23
ITMI922873A0 (it) 1992-12-17
GB2262655B (en) 1995-11-08

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971223