IT1170111B - Memoria a semiconduttori comprendente un circuito di scarica di tipo dinamico - Google Patents
Memoria a semiconduttori comprendente un circuito di scarica di tipo dinamicoInfo
- Publication number
- IT1170111B IT1170111B IT19718/83A IT1971883A IT1170111B IT 1170111 B IT1170111 B IT 1170111B IT 19718/83 A IT19718/83 A IT 19718/83A IT 1971883 A IT1971883 A IT 1971883A IT 1170111 B IT1170111 B IT 1170111B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor memory
- discharge circuit
- memory including
- dynamic discharge
- dynamic
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8203237A FR2522432A1 (fr) | 1982-02-26 | 1982-02-26 | Procede pour obtenir la decharge rapide d'une rangee de matrice memoire, et circuit de decharge dynamique correspondant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8319718A0 IT8319718A0 (it) | 1983-02-23 |
| IT1170111B true IT1170111B (it) | 1987-06-03 |
Family
ID=9271390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT19718/83A IT1170111B (it) | 1982-02-26 | 1983-02-23 | Memoria a semiconduttori comprendente un circuito di scarica di tipo dinamico |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4539659A (it) |
| JP (1) | JPS58175190A (it) |
| KR (1) | KR910000966B1 (it) |
| CA (1) | CA1188806A (it) |
| DE (1) | DE3305427C2 (it) |
| FR (1) | FR2522432A1 (it) |
| GB (1) | GB2117202B (it) |
| IE (1) | IE54398B1 (it) |
| IT (1) | IT1170111B (it) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59162689A (ja) * | 1983-03-07 | 1984-09-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリのワ−ド線放電回路 |
| JPS60140592A (ja) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 半導体メモリ |
| US4570240A (en) * | 1983-12-29 | 1986-02-11 | Motorola, Inc. | AC Transient driver for memory cells |
| US4864539A (en) * | 1987-01-15 | 1989-09-05 | International Business Machines Corporation | Radiation hardened bipolar static RAM cell |
| US4825413A (en) * | 1987-02-24 | 1989-04-25 | Texas Instruments Incorporated | Bipolar-CMOS static ram memory device |
| US4961168A (en) * | 1987-02-24 | 1990-10-02 | Texas Instruments Incorporated | Bipolar-CMOS static random access memory device with bit line bias control |
| US5278795A (en) * | 1987-03-27 | 1994-01-11 | U.S. Philips Corporation | Memory circuit having a line decoder with a Darlington-type switching stage and a discharge current source |
| US4862421A (en) * | 1988-02-16 | 1989-08-29 | Texas Instruments Incorporated | Sensing and decoding scheme for a BiCMOS read/write memory |
| US4951255A (en) * | 1989-04-14 | 1990-08-21 | Atmel Corporation | Memory current sink |
| CA2042432A1 (en) * | 1990-05-31 | 1991-12-01 | Robert M. Reinschmidt | Memory selection circuit |
| US5321658A (en) * | 1990-05-31 | 1994-06-14 | Oki Electric Industry Co., Ltd. | Semiconductor memory device being coupled by auxiliary power lines to a main power line |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4168490A (en) * | 1978-06-26 | 1979-09-18 | Fairchild Camera And Instrument Corporation | Addressable word line pull-down circuit |
| FR2443118A1 (fr) * | 1978-11-30 | 1980-06-27 | Ibm France | Dispositif pour l'alimentation des memoires monolithiques |
| JPS55129992A (en) | 1979-03-24 | 1980-10-08 | Mitsubishi Electric Corp | Semiconductor memory |
| DE3004565C2 (de) * | 1980-02-07 | 1984-06-14 | Siemens AG, 1000 Berlin und 8000 München | Integrierte digitale Halbleiterschaltung |
-
1982
- 1982-02-26 FR FR8203237A patent/FR2522432A1/fr active Granted
-
1983
- 1983-02-17 DE DE3305427A patent/DE3305427C2/de not_active Expired
- 1983-02-23 GB GB08304974A patent/GB2117202B/en not_active Expired
- 1983-02-23 IE IE378/83A patent/IE54398B1/en not_active IP Right Cessation
- 1983-02-23 IT IT19718/83A patent/IT1170111B/it active
- 1983-02-23 KR KR1019830000731A patent/KR910000966B1/ko not_active IP Right Cessation
- 1983-02-24 US US06/469,536 patent/US4539659A/en not_active Expired - Fee Related
- 1983-02-24 CA CA000422278A patent/CA1188806A/en not_active Expired
- 1983-02-26 JP JP58030240A patent/JPS58175190A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3305427A1 (de) | 1983-09-15 |
| GB8304974D0 (en) | 1983-03-30 |
| JPS58175190A (ja) | 1983-10-14 |
| FR2522432A1 (fr) | 1983-09-02 |
| GB2117202B (en) | 1985-10-23 |
| KR910000966B1 (ko) | 1991-02-19 |
| IE830378L (en) | 1983-08-26 |
| US4539659A (en) | 1985-09-03 |
| JPH0315280B2 (it) | 1991-02-28 |
| GB2117202A (en) | 1983-10-05 |
| IT8319718A0 (it) | 1983-02-23 |
| IE54398B1 (en) | 1989-09-27 |
| KR840003892A (ko) | 1984-10-04 |
| FR2522432B1 (it) | 1984-04-13 |
| CA1188806A (en) | 1985-06-11 |
| DE3305427C2 (de) | 1986-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19950227 |