JPS55129992A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS55129992A JPS55129992A JP3591579A JP3591579A JPS55129992A JP S55129992 A JPS55129992 A JP S55129992A JP 3591579 A JP3591579 A JP 3591579A JP 3591579 A JP3591579 A JP 3591579A JP S55129992 A JPS55129992 A JP S55129992A
- Authority
- JP
- Japan
- Prior art keywords
- word line
- becomes
- time
- conductive state
- selection time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To make a semiconductor memory high-speed by making discharging of a word line rapid only at a non-selection time without influence upon the charging mechanism of the word line at a selection time. CONSTITUTION:In case that word line 5 is selected, transistor Tr 3b becomes a break state, and the collector becomes the ground potential. At this time, the base potential of Tr 11b is lower than the base potential of Tr 11a, and Tr 11b becomes a break state, and Tr 11a becomes a conductive state. That is, no influence is given to the charging mechanism of word line 5. In case that word line 5 is not selected, Tr 3b becomes a conductive state, and the collector is lowered by voltage drop components dependent upon load resistance 2. At this time, the base potential of Tr 11b becomes higher than the base of Tr 11a, and Tr 11b becomes a conductive state. That is, a current is pulled out from word line 5 by constant-current source 12. Thus, discharging of word line 5 is made rapid only at a non-selection time. Further, electric charge is discharged from word line 5 through no impedance by constant-current source 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3591579A JPS55129992A (en) | 1979-03-24 | 1979-03-24 | Semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3591579A JPS55129992A (en) | 1979-03-24 | 1979-03-24 | Semiconductor memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55129992A true JPS55129992A (en) | 1980-10-08 |
Family
ID=12455319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3591579A Pending JPS55129992A (en) | 1979-03-24 | 1979-03-24 | Semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55129992A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3305427A1 (en) | 1982-02-26 | 1983-09-15 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | SEMICONDUCTOR MEMORY WITH A DYNAMIC DISCHARGE CIRCUIT |
JPS58161196A (en) * | 1982-03-19 | 1983-09-24 | Fujitsu Ltd | Semiconductor storage device |
JPS59132490A (en) * | 1983-01-20 | 1984-07-30 | Hitachi Ltd | Semiconductor memory |
JPH0773675A (en) * | 1990-05-31 | 1995-03-17 | Digital Equip Corp <Dec> | Memory selector circuit |
-
1979
- 1979-03-24 JP JP3591579A patent/JPS55129992A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3305427A1 (en) | 1982-02-26 | 1983-09-15 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | SEMICONDUCTOR MEMORY WITH A DYNAMIC DISCHARGE CIRCUIT |
JPS58161196A (en) * | 1982-03-19 | 1983-09-24 | Fujitsu Ltd | Semiconductor storage device |
JPH0226317B2 (en) * | 1982-03-19 | 1990-06-08 | Fujitsu Ltd | |
JPS59132490A (en) * | 1983-01-20 | 1984-07-30 | Hitachi Ltd | Semiconductor memory |
JPH0551996B2 (en) * | 1983-01-20 | 1993-08-04 | Hitachi Ltd | |
JPH0773675A (en) * | 1990-05-31 | 1995-03-17 | Digital Equip Corp <Dec> | Memory selector circuit |
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