IT1149977B - Struttura di memoria perfezionata - Google Patents
Struttura di memoria perfezionataInfo
- Publication number
- IT1149977B IT1149977B IT22716/80A IT2271680A IT1149977B IT 1149977 B IT1149977 B IT 1149977B IT 22716/80 A IT22716/80 A IT 22716/80A IT 2271680 A IT2271680 A IT 2271680A IT 1149977 B IT1149977 B IT 1149977B
- Authority
- IT
- Italy
- Prior art keywords
- perfected
- memory structure
- memory
- perfected memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792926514 DE2926514A1 (de) | 1979-06-30 | 1979-06-30 | Elektrische speicheranordnung und verfahren zu ihrem betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8022716A0 IT8022716A0 (it) | 1980-06-11 |
IT1149977B true IT1149977B (it) | 1986-12-10 |
Family
ID=6074624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22716/80A IT1149977B (it) | 1979-06-30 | 1980-06-11 | Struttura di memoria perfezionata |
Country Status (5)
Country | Link |
---|---|
US (1) | US4313179A (it) |
EP (1) | EP0020928B1 (it) |
JP (1) | JPS5824876B2 (it) |
DE (2) | DE2926514A1 (it) |
IT (1) | IT1149977B (it) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4731747A (en) * | 1986-04-14 | 1988-03-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Highly parallel computation network with normalized speed of response |
US4922455A (en) * | 1987-09-08 | 1990-05-01 | International Business Machines Corporation | Memory cell with active device for saturation capacitance discharge prior to writing |
EP0365730B1 (en) * | 1988-10-28 | 1994-08-03 | International Business Machines Corporation | Double stage bipolar sense amplifier for BICMOS SRAMS with a common base amplifier in the final stage |
JPH03116493A (ja) * | 1989-09-28 | 1991-05-17 | Toshiba Micro Electron Kk | センスアンプ回路 |
KR100264075B1 (ko) | 1997-06-20 | 2000-08-16 | 김영환 | 전하 증폭 비트 라인 센스 앰프 |
US20100326085A1 (en) * | 2009-06-25 | 2010-12-30 | Veilleux Leo J | Lightweight start system for a gas turbine engine |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3815106A (en) * | 1972-05-11 | 1974-06-04 | S Wiedmann | Flip-flop memory cell arrangement |
DE2021824C3 (de) * | 1970-05-05 | 1980-08-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische Halbleiterschaltung |
US3765002A (en) * | 1971-04-20 | 1973-10-09 | Siemens Ag | Accelerated bit-line discharge of a mosfet memory |
DE2135625B1 (de) * | 1971-07-16 | 1973-01-04 | Ibm Deutschland Gmbh, 7000 Stuttgart | Schaltungsanordnung zur automatischen Schreib-Unterdrückung |
US3983412A (en) * | 1975-07-02 | 1976-09-28 | Fairchild Camera And Instrument Corporation | Differential sense amplifier |
DE2612666C2 (de) * | 1976-03-25 | 1982-11-18 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte, invertierende logische Schaltung |
GB1579386A (en) * | 1976-07-22 | 1980-11-19 | Tokyo Shibaura Electric Co | Semiconductor memory device and method of manufacturing the same |
DE2647394C2 (de) * | 1976-10-20 | 1978-11-16 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MOS-Halbleiterspeicherbaustein |
-
1979
- 1979-06-30 DE DE19792926514 patent/DE2926514A1/de not_active Withdrawn
-
1980
- 1980-03-24 US US06/133,383 patent/US4313179A/en not_active Expired - Lifetime
- 1980-04-25 DE DE8080102232T patent/DE3064212D1/de not_active Expired
- 1980-04-25 EP EP80102232A patent/EP0020928B1/de not_active Expired
- 1980-05-20 JP JP55066053A patent/JPS5824876B2/ja not_active Expired
- 1980-06-11 IT IT22716/80A patent/IT1149977B/it active
Also Published As
Publication number | Publication date |
---|---|
DE3064212D1 (en) | 1983-08-25 |
IT8022716A0 (it) | 1980-06-11 |
JPS5824876B2 (ja) | 1983-05-24 |
EP0020928A1 (de) | 1981-01-07 |
EP0020928B1 (de) | 1983-07-20 |
US4313179A (en) | 1982-01-26 |
JPS567293A (en) | 1981-01-24 |
DE2926514A1 (de) | 1981-01-15 |
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