IT1128796B - Elemento resistivo ad elevata tensione di scarica disruptiva per circuiti integrati - Google Patents

Elemento resistivo ad elevata tensione di scarica disruptiva per circuiti integrati

Info

Publication number
IT1128796B
IT1128796B IT67863/80A IT6786380A IT1128796B IT 1128796 B IT1128796 B IT 1128796B IT 67863/80 A IT67863/80 A IT 67863/80A IT 6786380 A IT6786380 A IT 6786380A IT 1128796 B IT1128796 B IT 1128796B
Authority
IT
Italy
Prior art keywords
integrated circuits
disruptive discharge
discharge resistant
voltage
voltage disruptive
Prior art date
Application number
IT67863/80A
Other languages
English (en)
Other versions
IT8067863A0 (it
Inventor
Imaizumi Ichiro
Ochi Shikayuki
Kimura Masatoshi
Yoshimura Masayoshi
Yamaguchi Takashi
Koda Toyomasa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8067863A0 publication Critical patent/IT8067863A0/it
Application granted granted Critical
Publication of IT1128796B publication Critical patent/IT1128796B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
IT67863/80A 1979-06-04 1980-06-03 Elemento resistivo ad elevata tensione di scarica disruptiva per circuiti integrati IT1128796B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54068972A JPS5811750B2 (ja) 1979-06-04 1979-06-04 高耐圧抵抗素子

Publications (2)

Publication Number Publication Date
IT8067863A0 IT8067863A0 (it) 1980-06-03
IT1128796B true IT1128796B (it) 1986-06-04

Family

ID=13389086

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67863/80A IT1128796B (it) 1979-06-04 1980-06-03 Elemento resistivo ad elevata tensione di scarica disruptiva per circuiti integrati

Country Status (4)

Country Link
US (1) US4423433A (it)
JP (1) JPS5811750B2 (it)
DE (1) DE3021042C2 (it)
IT (1) IT1128796B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117268A (en) * 1981-01-14 1982-07-21 Toshiba Corp Semiconductor device
JPS57188360U (it) * 1981-05-25 1982-11-30
EP0087155B1 (en) * 1982-02-22 1991-05-29 Kabushiki Kaisha Toshiba Means for preventing the breakdown of an insulation layer in semiconductor devices
US4685203A (en) * 1983-09-13 1987-08-11 Mitsubishi Denki Kabushiki Kaisha Hybrid integrated circuit substrate and method of manufacturing the same
JPS60123052A (ja) * 1983-12-07 1985-07-01 Hitachi Ltd 半導体装置
US5257095A (en) * 1985-12-04 1993-10-26 Advanced Micro Devices, Inc. Common geometry high voltage tolerant long channel and high speed short channel field effect transistors
JPS62295445A (ja) * 1985-12-20 1987-12-22 Sanyo Electric Co Ltd 半導体集積回路装置
FR2596922B1 (fr) * 1986-04-04 1988-05-20 Thomson Csf Resistance integree sur un substrat semi-conducteur
US4785279A (en) * 1986-12-12 1988-11-15 Texas Instruments Incorporated Integrated circuit resistor having balanced field plate
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields
JPH021928A (ja) * 1988-06-10 1990-01-08 Toshiba Corp 半導体集積回路
SE465193B (sv) * 1989-12-06 1991-08-05 Ericsson Telefon Ab L M Foer hoegspaenning avsedd ic-krets
EP0574643B1 (en) * 1992-05-28 1998-03-18 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Spiral resistor integrated on a semiconductor substrate
EP0571695A1 (en) * 1992-05-28 1993-12-01 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe High voltage resistor integrated on a semiconductor substrate
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
US8384157B2 (en) * 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
US8383952B2 (en) * 2009-08-05 2013-02-26 Kovio, Inc. Printed compatible designs and layout schemes for printed electronics

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3518494A (en) * 1964-06-29 1970-06-30 Signetics Corp Radiation resistant semiconductor device and method
US3491325A (en) * 1967-02-15 1970-01-20 Ibm Temperature compensation for semiconductor devices
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
FR96113E (fr) * 1967-12-06 1972-05-19 Ibm Dispositif semi-conducteur.
US3683491A (en) * 1970-11-12 1972-08-15 Carroll E Nelson Method for fabricating pinched resistor semiconductor structure
JPS5421073B2 (it) * 1974-04-15 1979-07-27
JPS5244580A (en) * 1975-10-06 1977-04-07 Hitachi Ltd Semiconductor device
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
FR2430092A1 (fr) * 1978-06-29 1980-01-25 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues
US4246502A (en) * 1978-08-16 1981-01-20 Mitel Corporation Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom
JPS55140260A (en) * 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
DE3021042A1 (de) 1980-12-11
IT8067863A0 (it) 1980-06-03
JPS55162255A (en) 1980-12-17
JPS5811750B2 (ja) 1983-03-04
US4423433A (en) 1983-12-27
DE3021042C2 (de) 1983-08-18

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950630