IT1101183B - Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante - Google Patents
Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultanteInfo
- Publication number
- IT1101183B IT1101183B IT30507/78A IT3050778A IT1101183B IT 1101183 B IT1101183 B IT 1101183B IT 30507/78 A IT30507/78 A IT 30507/78A IT 3050778 A IT3050778 A IT 3050778A IT 1101183 B IT1101183 B IT 1101183B
- Authority
- IT
- Italy
- Prior art keywords
- intagrated
- emitter
- improvement
- production process
- breakdown voltage
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT30507/78A IT1101183B (it) | 1978-12-04 | 1978-12-04 | Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante |
SE7909953A SE454631B (sv) | 1978-12-04 | 1979-12-03 | Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer |
FR7929737A FR2443742A1 (fr) | 1978-12-04 | 1979-12-04 | Perfectionnement apporte au procede pour la production de transistors bipolaires integres a tension elevee de rupture collecteur-emetteur et produit ainsi obtenu |
GB7941857A GB2037487A (en) | 1978-12-04 | 1979-12-04 | Method for producing an integrated semiconductor device |
DE19792948800 DE2948800A1 (de) | 1978-12-04 | 1979-12-04 | Verfahren zur herstellung integrierter, bipolarer transistoren mit erhoehter durchbruchspannung zwischen kollektor und emitter sowie dadurch hergestellter transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT30507/78A IT1101183B (it) | 1978-12-04 | 1978-12-04 | Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7830507A0 IT7830507A0 (it) | 1978-12-04 |
IT1101183B true IT1101183B (it) | 1985-09-28 |
Family
ID=11229874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT30507/78A IT1101183B (it) | 1978-12-04 | 1978-12-04 | Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante |
Country Status (5)
Country | Link |
---|---|
DE (1) | DE2948800A1 (fr) |
FR (1) | FR2443742A1 (fr) |
GB (1) | GB2037487A (fr) |
IT (1) | IT1101183B (fr) |
SE (1) | SE454631B (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT201600130185A1 (it) | 2016-12-22 | 2018-06-22 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo a semiconduttore integrante un transistore a conduzione verticale, e dispositivo a semiconduttore |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1300768A (en) * | 1969-07-29 | 1972-12-20 | Fairchild Camera Instr Co | Improvements in or relating to semiconductor structures |
-
1978
- 1978-12-04 IT IT30507/78A patent/IT1101183B/it active
-
1979
- 1979-12-03 SE SE7909953A patent/SE454631B/sv not_active IP Right Cessation
- 1979-12-04 DE DE19792948800 patent/DE2948800A1/de not_active Withdrawn
- 1979-12-04 FR FR7929737A patent/FR2443742A1/fr active Granted
- 1979-12-04 GB GB7941857A patent/GB2037487A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
SE454631B (sv) | 1988-05-16 |
FR2443742A1 (fr) | 1980-07-04 |
IT7830507A0 (it) | 1978-12-04 |
SE7909953L (sv) | 1980-06-05 |
GB2037487A (en) | 1980-07-09 |
FR2443742B1 (fr) | 1985-03-08 |
DE2948800A1 (de) | 1980-06-19 |
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Legal Events
Date | Code | Title | Description |
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TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19961227 |