GB2037487A - Method for producing an integrated semiconductor device - Google Patents
Method for producing an integrated semiconductor device Download PDFInfo
- Publication number
- GB2037487A GB2037487A GB7941857A GB7941857A GB2037487A GB 2037487 A GB2037487 A GB 2037487A GB 7941857 A GB7941857 A GB 7941857A GB 7941857 A GB7941857 A GB 7941857A GB 2037487 A GB2037487 A GB 2037487A
- Authority
- GB
- United Kingdom
- Prior art keywords
- stage
- substrate
- insulation
- zones
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 25
- 239000002019 doping agent Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 239000003153 chemical reaction reagent Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101100434502 Oryza sativa subsp. japonica AGO7 gene Proteins 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000009027 insemination Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT30507/78A IT1101183B (it) | 1978-12-04 | 1978-12-04 | Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2037487A true GB2037487A (en) | 1980-07-09 |
Family
ID=11229874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7941857A Withdrawn GB2037487A (en) | 1978-12-04 | 1979-12-04 | Method for producing an integrated semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE2948800A1 (fr) |
| FR (1) | FR2443742A1 (fr) |
| GB (1) | GB2037487A (fr) |
| IT (1) | IT1101183B (fr) |
| SE (1) | SE454631B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201600130185A1 (it) * | 2016-12-22 | 2018-06-22 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo a semiconduttore integrante un transistore a conduzione verticale, e dispositivo a semiconduttore |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1300768A (en) * | 1969-07-29 | 1972-12-20 | Fairchild Camera Instr Co | Improvements in or relating to semiconductor structures |
-
1978
- 1978-12-04 IT IT30507/78A patent/IT1101183B/it active
-
1979
- 1979-12-03 SE SE7909953A patent/SE454631B/sv not_active IP Right Cessation
- 1979-12-04 FR FR7929737A patent/FR2443742A1/fr active Granted
- 1979-12-04 DE DE19792948800 patent/DE2948800A1/de not_active Withdrawn
- 1979-12-04 GB GB7941857A patent/GB2037487A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201600130185A1 (it) * | 2016-12-22 | 2018-06-22 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo a semiconduttore integrante un transistore a conduzione verticale, e dispositivo a semiconduttore |
| CN108231886A (zh) * | 2016-12-22 | 2018-06-29 | 意法半导体股份有限公司 | 制造半导体器件的方法以及半导体器件 |
| US10141422B2 (en) | 2016-12-22 | 2018-11-27 | Stmicroelectronics S.R.L. | Method of manufacturing a semiconductor device integrating a vertical conduction transistor, and semiconductor device |
| CN108231886B (zh) * | 2016-12-22 | 2021-06-04 | 意法半导体股份有限公司 | 制造半导体器件的方法以及半导体器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| SE7909953L (sv) | 1980-06-05 |
| DE2948800A1 (de) | 1980-06-19 |
| FR2443742A1 (fr) | 1980-07-04 |
| IT7830507A0 (it) | 1978-12-04 |
| IT1101183B (it) | 1985-09-28 |
| FR2443742B1 (fr) | 1985-03-08 |
| SE454631B (sv) | 1988-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |