IT1035303B - Diodo pin a zona intrinseca spessa e dispositivo comportante un tale diodo - Google Patents

Diodo pin a zona intrinseca spessa e dispositivo comportante un tale diodo

Info

Publication number
IT1035303B
IT1035303B IT49085/75A IT4908575A IT1035303B IT 1035303 B IT1035303 B IT 1035303B IT 49085/75 A IT49085/75 A IT 49085/75A IT 4908575 A IT4908575 A IT 4908575A IT 1035303 B IT1035303 B IT 1035303B
Authority
IT
Italy
Prior art keywords
diode
pin
intrinsic zone
thick intrinsic
thick
Prior art date
Application number
IT49085/75A
Other languages
English (en)
Italian (it)
Original Assignee
Thomson Csf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Csf filed Critical Thomson Csf
Application granted granted Critical
Publication of IT1035303B publication Critical patent/IT1035303B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
IT49085/75A 1974-04-16 1975-04-15 Diodo pin a zona intrinseca spessa e dispositivo comportante un tale diodo IT1035303B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7413206A FR2268355B1 (enExample) 1974-04-16 1974-04-16

Publications (1)

Publication Number Publication Date
IT1035303B true IT1035303B (it) 1979-10-20

Family

ID=9137673

Family Applications (1)

Application Number Title Priority Date Filing Date
IT49085/75A IT1035303B (it) 1974-04-16 1975-04-15 Diodo pin a zona intrinseca spessa e dispositivo comportante un tale diodo

Country Status (5)

Country Link
US (1) US3982267A (enExample)
DE (1) DE2516620C3 (enExample)
FR (1) FR2268355B1 (enExample)
GB (1) GB1505124A (enExample)
IT (1) IT1035303B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163240A (en) * 1977-03-21 1979-07-31 The Harshaw Chemical Company Sensitive silicon pin diode fast neutron dosimeter
US4241360A (en) * 1978-08-10 1980-12-23 Galileo Electro-Optics Corp. Series capacitor voltage multiplier circuit with top connected rectifiers
JPS58151069A (ja) * 1982-03-03 1983-09-08 Hitachi Ltd 半導体装置
US4474623A (en) * 1982-04-26 1984-10-02 Raytheon Company Method of passivating a semiconductor body
US4525687A (en) * 1983-02-28 1985-06-25 At&T Bell Laboratories High speed light modulator using multiple quantum well structures
FR2552935B1 (fr) * 1983-09-30 1986-03-21 Thomson Csf Perfectionnement aux commutateurs d'ondes electromagnetiques millimetriques
US4885622A (en) * 1984-03-23 1989-12-05 Oki Electric Industry Co., Ltd. Pin photodiode and method of fabrication of the same
US5168337A (en) * 1988-02-19 1992-12-01 Nippondenso Co., Ltd. Polycrystalline diode and a method for making the same
US5170139A (en) * 1991-03-28 1992-12-08 Texas Instruments Incorporated PIN diode switch
US5319240A (en) * 1993-02-03 1994-06-07 International Business Machines Corporation Three dimensional integrated device and circuit structures
FR2758888B1 (fr) * 1997-01-27 1999-04-23 Thomson Csf Procede de modelisation fine du fouillis de sol recu par un radar
US6429500B1 (en) 2000-09-29 2002-08-06 International Business Machines Corporation Semiconductor pin diode for high frequency applications
US6426547B1 (en) 2000-12-12 2002-07-30 Information Business Machines Corporation Lateral polysilicon pin diode and method for so fabricating
KR100695306B1 (ko) * 2001-06-21 2007-03-14 삼성전자주식회사 피아이엔 다이오드의 제조 방법
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US7525122B2 (en) * 2005-06-29 2009-04-28 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
RU2408955C1 (ru) * 2009-06-29 2011-01-10 Федеральное государственное учреждение "Научно-производственный комплекс "Технологический центр" Московского Государственного института электронной техники" (ФГУ НПК "ТЦ" МИЭТ) P-i-n-диодный преобразователь нейтронного излучения
US8994073B2 (en) 2012-10-04 2015-03-31 Cree, Inc. Hydrogen mitigation schemes in the passivation of advanced devices
US9812338B2 (en) 2013-03-14 2017-11-07 Cree, Inc. Encapsulation of advanced devices using novel PECVD and ALD schemes
US9991399B2 (en) 2012-10-04 2018-06-05 Cree, Inc. Passivation structure for semiconductor devices
JP6139340B2 (ja) * 2013-09-03 2017-05-31 株式会社東芝 半導体装置およびその製造方法
US11342469B2 (en) * 2018-07-09 2022-05-24 Macom Technology Solutions Holdings, Inc. Vertical etch heterolithic integrated circuit devices
CN113474898A (zh) * 2019-02-07 2021-10-01 镁可微波技术有限公司 具有直段阳极的二极管
RU207343U1 (ru) * 2021-07-05 2021-10-25 OOO «СофтЭксперт» P-I-N-диодный дозиметр

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3264531A (en) * 1962-03-29 1966-08-02 Jr Donald C Dickson Rectifier assembly comprising series stacked pn-junction rectifiers
CH454279A (de) * 1966-12-02 1968-04-15 Bbc Brown Boveri & Cie Halbleiterventil
GB1172772A (en) * 1967-07-20 1969-12-03 Westinghouse Brake & Signal Semiconductor Devices.
US3761711A (en) * 1972-02-25 1973-09-25 Gen Electric Improved germanium gamma detectors having non-ideal contacts and deep level inducing impurities therein
US3812717A (en) * 1972-04-03 1974-05-28 Bell Telephone Labor Inc Semiconductor diode thermometry

Also Published As

Publication number Publication date
GB1505124A (en) 1978-03-22
DE2516620C3 (de) 1979-01-18
US3982267A (en) 1976-09-21
FR2268355A1 (enExample) 1975-11-14
FR2268355B1 (enExample) 1978-01-20
DE2516620B2 (de) 1978-05-11
DE2516620A1 (de) 1975-10-30

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