IT1035303B - Diodo pin a zona intrinseca spessa e dispositivo comportante un tale diodo - Google Patents
Diodo pin a zona intrinseca spessa e dispositivo comportante un tale diodoInfo
- Publication number
- IT1035303B IT1035303B IT49085/75A IT4908575A IT1035303B IT 1035303 B IT1035303 B IT 1035303B IT 49085/75 A IT49085/75 A IT 49085/75A IT 4908575 A IT4908575 A IT 4908575A IT 1035303 B IT1035303 B IT 1035303B
- Authority
- IT
- Italy
- Prior art keywords
- diode
- pin
- intrinsic zone
- thick intrinsic
- thick
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7413206A FR2268355B1 (it) | 1974-04-16 | 1974-04-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1035303B true IT1035303B (it) | 1979-10-20 |
Family
ID=9137673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT49085/75A IT1035303B (it) | 1974-04-16 | 1975-04-15 | Diodo pin a zona intrinseca spessa e dispositivo comportante un tale diodo |
Country Status (5)
Country | Link |
---|---|
US (1) | US3982267A (it) |
DE (1) | DE2516620C3 (it) |
FR (1) | FR2268355B1 (it) |
GB (1) | GB1505124A (it) |
IT (1) | IT1035303B (it) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4163240A (en) * | 1977-03-21 | 1979-07-31 | The Harshaw Chemical Company | Sensitive silicon pin diode fast neutron dosimeter |
US4241360A (en) * | 1978-08-10 | 1980-12-23 | Galileo Electro-Optics Corp. | Series capacitor voltage multiplier circuit with top connected rectifiers |
JPS58151069A (ja) * | 1982-03-03 | 1983-09-08 | Hitachi Ltd | 半導体装置 |
US4474623A (en) * | 1982-04-26 | 1984-10-02 | Raytheon Company | Method of passivating a semiconductor body |
US4525687A (en) * | 1983-02-28 | 1985-06-25 | At&T Bell Laboratories | High speed light modulator using multiple quantum well structures |
FR2552935B1 (fr) * | 1983-09-30 | 1986-03-21 | Thomson Csf | Perfectionnement aux commutateurs d'ondes electromagnetiques millimetriques |
US4885622A (en) * | 1984-03-23 | 1989-12-05 | Oki Electric Industry Co., Ltd. | Pin photodiode and method of fabrication of the same |
US5168337A (en) * | 1988-02-19 | 1992-12-01 | Nippondenso Co., Ltd. | Polycrystalline diode and a method for making the same |
US5170139A (en) * | 1991-03-28 | 1992-12-08 | Texas Instruments Incorporated | PIN diode switch |
US5319240A (en) * | 1993-02-03 | 1994-06-07 | International Business Machines Corporation | Three dimensional integrated device and circuit structures |
FR2758888B1 (fr) * | 1997-01-27 | 1999-04-23 | Thomson Csf | Procede de modelisation fine du fouillis de sol recu par un radar |
US6429500B1 (en) | 2000-09-29 | 2002-08-06 | International Business Machines Corporation | Semiconductor pin diode for high frequency applications |
US6426547B1 (en) | 2000-12-12 | 2002-07-30 | Information Business Machines Corporation | Lateral polysilicon pin diode and method for so fabricating |
KR100695306B1 (ko) * | 2001-06-21 | 2007-03-14 | 삼성전자주식회사 | 피아이엔 다이오드의 제조 방법 |
US7855401B2 (en) * | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
US7525122B2 (en) * | 2005-06-29 | 2009-04-28 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
JP6139340B2 (ja) * | 2013-09-03 | 2017-05-31 | 株式会社東芝 | 半導体装置およびその製造方法 |
US11342469B2 (en) * | 2018-07-09 | 2022-05-24 | Macom Technology Solutions Holdings, Inc. | Vertical etch heterolithic integrated circuit devices |
RU207343U1 (ru) * | 2021-07-05 | 2021-10-25 | OOO «СофтЭксперт» | P-I-N-диодный дозиметр |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3264531A (en) * | 1962-03-29 | 1966-08-02 | Jr Donald C Dickson | Rectifier assembly comprising series stacked pn-junction rectifiers |
CH454279A (de) * | 1966-12-02 | 1968-04-15 | Bbc Brown Boveri & Cie | Halbleiterventil |
GB1172772A (en) * | 1967-07-20 | 1969-12-03 | Westinghouse Brake & Signal | Semiconductor Devices. |
US3761711A (en) * | 1972-02-25 | 1973-09-25 | Gen Electric | Improved germanium gamma detectors having non-ideal contacts and deep level inducing impurities therein |
US3812717A (en) * | 1972-04-03 | 1974-05-28 | Bell Telephone Labor Inc | Semiconductor diode thermometry |
-
1974
- 1974-04-16 FR FR7413206A patent/FR2268355B1/fr not_active Expired
-
1975
- 1975-04-15 GB GB15530/75A patent/GB1505124A/en not_active Expired
- 1975-04-15 IT IT49085/75A patent/IT1035303B/it active
- 1975-04-15 US US05/568,363 patent/US3982267A/en not_active Expired - Lifetime
- 1975-04-16 DE DE2516620A patent/DE2516620C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1505124A (en) | 1978-03-22 |
US3982267A (en) | 1976-09-21 |
DE2516620A1 (de) | 1975-10-30 |
FR2268355B1 (it) | 1978-01-20 |
DE2516620B2 (de) | 1978-05-11 |
DE2516620C3 (de) | 1979-01-18 |
FR2268355A1 (it) | 1975-11-14 |
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