IT1030838B - Heat pipe cooled power semiconductor device - has two thin thermally conductive pressure plates in contact with support plates - Google Patents

Heat pipe cooled power semiconductor device - has two thin thermally conductive pressure plates in contact with support plates

Info

Publication number
IT1030838B
IT1030838B IT2989574A IT2989574A IT1030838B IT 1030838 B IT1030838 B IT 1030838B IT 2989574 A IT2989574 A IT 2989574A IT 2989574 A IT2989574 A IT 2989574A IT 1030838 B IT1030838 B IT 1030838B
Authority
IT
Italy
Prior art keywords
semiconductor device
plates
pressure
thermally conductive
contact
Prior art date
Application number
IT2989574A
Other languages
Italian (it)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Priority to IT2989574A priority Critical patent/IT1030838B/en
Application granted granted Critical
Publication of IT1030838B publication Critical patent/IT1030838B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Abstract

The heat pipe cooled power semiconductor device uses two support plates of suitable heat expansion coefficient, one connected to the semiconductor body and the other one in pressure contact only for prevention of damage under high loads. Two relative thin pressure plates (10a, 12) of thermally conductive material are provided and are in pressure contact with the respective surface of the support plate (11d, 11e). The pressure plate thickness is in the region of 2.54 to 7.62 mm. The pressure plates are clamped together by a device (13) exerting a pressure of 140.62 kp per sq. cm onto the semiconductor device (11). The clamping device enables easy removal of the semiconductor device from the arrangement. To the pressure plates are connected lead wires for the power supply.
IT2989574A 1974-11-27 1974-11-27 Heat pipe cooled power semiconductor device - has two thin thermally conductive pressure plates in contact with support plates IT1030838B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IT2989574A IT1030838B (en) 1974-11-27 1974-11-27 Heat pipe cooled power semiconductor device - has two thin thermally conductive pressure plates in contact with support plates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2989574A IT1030838B (en) 1974-11-27 1974-11-27 Heat pipe cooled power semiconductor device - has two thin thermally conductive pressure plates in contact with support plates

Publications (1)

Publication Number Publication Date
IT1030838B true IT1030838B (en) 1979-04-10

Family

ID=11228629

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2989574A IT1030838B (en) 1974-11-27 1974-11-27 Heat pipe cooled power semiconductor device - has two thin thermally conductive pressure plates in contact with support plates

Country Status (1)

Country Link
IT (1) IT1030838B (en)

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