IT1006474B - Transistore ad effetto di campo perfezionato e relativo procedi mento di fabbricazione - Google Patents

Transistore ad effetto di campo perfezionato e relativo procedi mento di fabbricazione

Info

Publication number
IT1006474B
IT1006474B IT2150474A IT2150474A IT1006474B IT 1006474 B IT1006474 B IT 1006474B IT 2150474 A IT2150474 A IT 2150474A IT 2150474 A IT2150474 A IT 2150474A IT 1006474 B IT1006474 B IT 1006474B
Authority
IT
Italy
Prior art keywords
field effect
effect transistor
manufacturing procedure
related manufacturing
improved field
Prior art date
Application number
IT2150474A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1006474B publication Critical patent/IT1006474B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51Insulating materials associated therewith
    • H01L29/511Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51Insulating materials associated therewith
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
IT2150474A 1973-05-03 1974-04-17 Transistore ad effetto di campo perfezionato e relativo procedi mento di fabbricazione IT1006474B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35704673A 1973-05-03 1973-05-03

Publications (1)

Publication Number Publication Date
IT1006474B true IT1006474B (it) 1976-09-30

Family

ID=23404079

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2150474A IT1006474B (it) 1973-05-03 1974-04-17 Transistore ad effetto di campo perfezionato e relativo procedi mento di fabbricazione

Country Status (6)

Country Link
JP (1) JPS522272B2 (cs)
CA (1) CA1017462A (cs)
DE (1) DE2419704A1 (cs)
FR (1) FR2228301B1 (cs)
GB (1) GB1452805A (cs)
IT (1) IT1006474B (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396686B (zh) 2004-05-21 2013-05-21 Takeda Pharmaceutical 環狀醯胺衍生物、以及其製品和用法
JP5943065B2 (ja) * 2012-03-05 2016-06-29 株式会社村田製作所 接合方法、電子装置の製造方法、および電子部品

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (cs) * 1963-06-28
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3632438A (en) * 1967-09-29 1972-01-04 Texas Instruments Inc Method for increasing the stability of semiconductor devices

Also Published As

Publication number Publication date
FR2228301A1 (cs) 1974-11-29
JPS5011391A (cs) 1975-02-05
FR2228301B1 (cs) 1977-10-14
GB1452805A (en) 1976-10-20
JPS522272B2 (cs) 1977-01-20
CA1017462A (en) 1977-09-13
DE2419704A1 (de) 1974-11-21

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