IN2014MN00998A - - Google Patents

Info

Publication number
IN2014MN00998A
IN2014MN00998A IN998MUN2014A IN2014MN00998A IN 2014MN00998 A IN2014MN00998 A IN 2014MN00998A IN 998MUN2014 A IN998MUN2014 A IN 998MUN2014A IN 2014MN00998 A IN2014MN00998 A IN 2014MN00998A
Authority
IN
India
Prior art keywords
concentrated
diode
cadmium concentration
concentration
forming
Prior art date
Application number
Other languages
English (en)
Inventor
Laurent Mollard
Nicolas Baier
Johan Rothman
Original Assignee
Commissariat Lénergie Atomique Et Aux Énergies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Lénergie Atomique Et Aux Énergies Alternatives filed Critical Commissariat Lénergie Atomique Et Aux Énergies Alternatives
Publication of IN2014MN00998A publication Critical patent/IN2014MN00998A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IN998MUN2014 2011-11-28 2012-11-26 IN2014MN00998A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1103617A FR2983351B1 (fr) 2011-11-28 2011-11-28 Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
PCT/EP2012/073629 WO2013079446A1 (fr) 2011-11-28 2012-11-26 DIODE P/N A HETEROSTRUCTURE CONTRÔLEE AUTOPOSITIONNEE SUR HgCdTe POUR IMAGEURS INFRAROUGES

Publications (1)

Publication Number Publication Date
IN2014MN00998A true IN2014MN00998A (fr) 2015-04-24

Family

ID=47221434

Family Applications (1)

Application Number Title Priority Date Filing Date
IN998MUN2014 IN2014MN00998A (fr) 2011-11-28 2012-11-26

Country Status (10)

Country Link
US (1) US9178101B2 (fr)
EP (1) EP2786425B1 (fr)
JP (1) JP6151266B2 (fr)
KR (1) KR102064542B1 (fr)
CN (1) CN103959482B (fr)
FR (1) FR2983351B1 (fr)
IL (1) IL232856A (fr)
IN (1) IN2014MN00998A (fr)
RU (1) RU2618483C2 (fr)
WO (1) WO2013079446A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2983351B1 (fr) 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
CN103855013A (zh) * 2012-11-30 2014-06-11 中国科学院微电子研究所 N型mosfet的制造方法
CN103855007A (zh) * 2012-11-30 2014-06-11 中国科学院微电子研究所 P型mosfet的制造方法
FR3000609B1 (fr) 2012-12-31 2015-01-30 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode
FR3020176B1 (fr) 2014-04-22 2017-09-29 Commissariat Energie Atomique Matrice de photodiodes en cdhgte
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
FR3023976B1 (fr) 2014-07-16 2017-11-17 Commissariat Energie Atomique Matrice de photodiodes cdhgte a faible bruit
FR3027452B1 (fr) * 2014-10-21 2016-12-09 Commissariat Energie Atomique Procede de fabrication d'une photodiode a faible bruit
FR3042310B1 (fr) * 2015-10-12 2018-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Fabrication d'une matrice de photodiodes multispectrale en cdhgte par diffusion de cadmium
FR3050572B1 (fr) 2016-04-26 2018-04-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de photo-detection a reseau inter-diodes sur-dope et procede de fabrication
FR3053837B1 (fr) 2016-07-08 2018-08-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure du type photodiode a avalanche et procede de fabrication d'une telle structure
FR3089063A1 (fr) 2018-11-27 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Photodiode sam à multiplication d’un seul type de porteurs dans une région à multicouche périodique
FR3109244B1 (fr) 2020-04-09 2022-04-01 Commissariat Energie Atomique Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace
FR3113781B1 (fr) 2020-08-25 2022-12-16 Commissariat Energie Atomique PROCÉDÉ DE FABRICATION D’UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe.
WO2021205102A1 (fr) 2020-04-09 2021-10-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives PROCÉDÉ DE FABRICATION D'UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
US4137544A (en) * 1977-07-05 1979-01-30 Honeywell Inc. Mercury cadmium telluride photodiode
JPS61256676A (ja) * 1985-05-09 1986-11-14 Mitsubishi Electric Corp 半導体装置
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
JPS63237484A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体装置
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
JPH03148185A (ja) * 1989-11-02 1991-06-24 Mitsubishi Electric Corp 赤外線検知器
JPH06163469A (ja) * 1992-11-20 1994-06-10 Fujitsu Ltd 半導体のエッチング方法および該エッチング方法を用いた光検知素子の製造方法
JPH06260675A (ja) * 1993-03-09 1994-09-16 Fujitsu Ltd 光検知素子およびその製造方法
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
JPH0779008A (ja) * 1993-06-30 1995-03-20 Fujitsu Ltd 赤外線検出装置
JP2699838B2 (ja) * 1993-11-25 1998-01-19 日本電気株式会社 赤外線検出器とその製造方法
IL108589A (en) * 1994-02-08 1998-06-15 Technion Res & Dev Foundation SINGLE LAYER PLANAR Hg Cd Te PHOTOVOLTAIC INFRARED DETECTOR WITH HETEROSTRUCTURE PASSIVATION AND P-ON-N HOMOJUNCTION
JP2001274421A (ja) * 2000-03-23 2001-10-05 Toshiba Corp 化合物半導体素子およびその製造方法
US7041983B2 (en) * 2001-10-12 2006-05-09 Lockheed Martin Corporation Planar geometry buried junction infrared detector and focal plane array
RU2244365C1 (ru) * 2003-12-09 2005-01-10 Федеральное государственное унитарное предприятие "Альфа" Фотоприемное устройство
FR2868602B1 (fr) 2004-04-05 2006-05-26 Commissariat Energie Atomique Circuit de detection photonique a structure mesa
GB0407804D0 (en) * 2004-04-06 2004-05-12 Qinetiq Ltd Manufacture of cadmium mercury telluride
US7368762B2 (en) * 2005-01-06 2008-05-06 Teledyne Licensing, Llc Heterojunction photodiode
FR2934716B1 (fr) 2008-07-31 2010-09-10 Commissariat Energie Atomique Diode electroluminescente en materiau semiconducteur et son procede de fabrication
US8541256B2 (en) * 2011-04-17 2013-09-24 Chang-Feng Wan Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
FR2983351B1 (fr) 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR3000608B1 (fr) 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche et procede de fabrication d'une telle structure
FR3000610B1 (fr) 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode

Also Published As

Publication number Publication date
FR2983351A1 (fr) 2013-05-31
IL232856A0 (en) 2014-07-31
KR20140098838A (ko) 2014-08-08
KR102064542B1 (ko) 2020-01-09
RU2014126434A (ru) 2016-01-27
EP2786425B1 (fr) 2016-03-02
JP6151266B2 (ja) 2017-06-21
JP2015504607A (ja) 2015-02-12
FR2983351B1 (fr) 2014-01-24
EP2786425A1 (fr) 2014-10-08
US9178101B2 (en) 2015-11-03
IL232856A (en) 2017-03-30
WO2013079446A1 (fr) 2013-06-06
RU2618483C2 (ru) 2017-05-03
US20140319580A1 (en) 2014-10-30
CN103959482B (zh) 2016-10-12
CN103959482A (zh) 2014-07-30

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