IN2014CN03275A - - Google Patents
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- Publication number
- IN2014CN03275A IN2014CN03275A IN3275CHN2014A IN2014CN03275A IN 2014CN03275 A IN2014CN03275 A IN 2014CN03275A IN 3275CHN2014 A IN3275CHN2014 A IN 3275CHN2014A IN 2014CN03275 A IN2014CN03275 A IN 2014CN03275A
- Authority
- IN
- India
- Prior art keywords
- semiconductor regions
- potential
- biased
- junction
- drain
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 7
- 230000005669 field effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14681—Bipolar transistor imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
- H01L27/14656—Overflow drain structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011222020A JP5907500B2 (ja) | 2011-10-06 | 2011-10-06 | 光電変換装置、光電変換アレイおよび撮像装置 |
PCT/JP2012/076557 WO2013051734A1 (fr) | 2011-10-06 | 2012-10-05 | Convertisseur photoélectrique, réseau de convertisseurs photoélectriques et dispositif d'imagerie |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014CN03275A true IN2014CN03275A (fr) | 2015-07-03 |
Family
ID=48043886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN3275CHN2014 IN2014CN03275A (fr) | 2011-10-06 | 2012-10-05 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9337234B2 (fr) |
EP (1) | EP2764687A4 (fr) |
JP (1) | JP5907500B2 (fr) |
KR (1) | KR101609960B1 (fr) |
CN (1) | CN103975581B (fr) |
BR (1) | BR112014008399A2 (fr) |
IN (1) | IN2014CN03275A (fr) |
WO (1) | WO2013051734A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6387743B2 (ja) | 2013-12-16 | 2018-09-12 | 株式会社リコー | 半導体装置および半導体装置の製造方法 |
JP6281297B2 (ja) | 2014-01-27 | 2018-02-21 | 株式会社リコー | フォトトランジスタ、及び半導体装置 |
JP6354221B2 (ja) | 2014-03-12 | 2018-07-11 | 株式会社リコー | 撮像装置及び電子機器 |
JP2016025261A (ja) | 2014-07-23 | 2016-02-08 | 株式会社リコー | 撮像装置、撮像装置の制御方法、画素構造 |
JP6057477B2 (ja) * | 2014-10-15 | 2017-01-11 | 学校法人加計学園 岡山理科大学 | 非接触給電装置 |
JP2016092178A (ja) | 2014-11-04 | 2016-05-23 | 株式会社リコー | 固体撮像素子 |
JP2016092348A (ja) | 2014-11-11 | 2016-05-23 | 株式会社リコー | 半導体デバイス及びその製造方法、撮像装置 |
US10497818B2 (en) * | 2016-07-29 | 2019-12-03 | Canon Kabushiki Kaisha | Photodetection device and photodetection system |
US9915561B1 (en) | 2016-08-24 | 2018-03-13 | International Business Machines Corporation | Self-clocked low noise photoreceiver (SCLNP) |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6014231A (ja) | 1983-07-06 | 1985-01-24 | Ricoh Co Ltd | 原稿像読取装置 |
JPS60259917A (ja) * | 1984-06-06 | 1985-12-23 | Fujitsu Ten Ltd | 受光回路 |
JP2501208B2 (ja) * | 1987-01-16 | 1996-05-29 | キヤノン株式会社 | 光電変換装置 |
US4866293A (en) | 1986-12-09 | 1989-09-12 | Canon Kabushiki Kaisha | Photoelectric converting apparatus to prevent the outflow of excess carriers |
JPH01288181A (ja) | 1988-05-16 | 1989-11-20 | Seiko Instr Inc | 半導体イメージセンサ装置 |
TW421962B (en) * | 1997-09-29 | 2001-02-11 | Canon Kk | Image sensing device using mos type image sensing elements |
JP3590723B2 (ja) * | 1998-07-17 | 2004-11-17 | シャープ株式会社 | フォトトランジスタチップ |
US6856351B1 (en) * | 1999-09-16 | 2005-02-15 | Xerox Corporation | Device and method for reducing lag and blooming in amorphous silicon sensor arrays |
AU2001293062A1 (en) * | 2000-09-25 | 2002-04-08 | Foveon, Inc. | Active pixel sensor with noise cancellation |
JP5584982B2 (ja) | 2009-02-09 | 2014-09-10 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
JP2009141419A (ja) * | 2007-12-03 | 2009-06-25 | Panasonic Corp | 固体撮像素子 |
JP5363237B2 (ja) * | 2009-08-10 | 2013-12-11 | ローム株式会社 | 光電変換回路及びそれに用いる光電変換素子 |
JP5721994B2 (ja) | 2009-11-27 | 2015-05-20 | 株式会社ジャパンディスプレイ | 放射線撮像装置 |
JP5403369B2 (ja) * | 2010-03-31 | 2014-01-29 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
-
2011
- 2011-10-06 JP JP2011222020A patent/JP5907500B2/ja active Active
-
2012
- 2012-10-05 CN CN201280060268.3A patent/CN103975581B/zh not_active Expired - Fee Related
- 2012-10-05 IN IN3275CHN2014 patent/IN2014CN03275A/en unknown
- 2012-10-05 EP EP12838682.8A patent/EP2764687A4/fr not_active Withdrawn
- 2012-10-05 WO PCT/JP2012/076557 patent/WO2013051734A1/fr active Application Filing
- 2012-10-05 US US14/349,414 patent/US9337234B2/en not_active Expired - Fee Related
- 2012-10-05 BR BR112014008399A patent/BR112014008399A2/pt not_active IP Right Cessation
- 2012-10-05 KR KR1020147011779A patent/KR101609960B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN103975581B (zh) | 2017-09-08 |
US9337234B2 (en) | 2016-05-10 |
BR112014008399A2 (pt) | 2017-09-19 |
US20140239158A1 (en) | 2014-08-28 |
JP2013085030A (ja) | 2013-05-09 |
EP2764687A1 (fr) | 2014-08-13 |
CN103975581A (zh) | 2014-08-06 |
KR20140070652A (ko) | 2014-06-10 |
WO2013051734A1 (fr) | 2013-04-11 |
KR101609960B1 (ko) | 2016-04-06 |
JP5907500B2 (ja) | 2016-04-26 |
EP2764687A4 (fr) | 2015-10-21 |
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