IN2014DN08077A - - Google Patents

Info

Publication number
IN2014DN08077A
IN2014DN08077A IN8077DEN2014A IN2014DN08077A IN 2014DN08077 A IN2014DN08077 A IN 2014DN08077A IN 8077DEN2014 A IN8077DEN2014 A IN 8077DEN2014A IN 2014DN08077 A IN2014DN08077 A IN 2014DN08077A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Volker Probst
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of IN2014DN08077A publication Critical patent/IN2014DN08077A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
IN8077DEN2014 2012-04-02 2014-09-26 IN2014DN08077A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012205375A DE102012205375A1 (de) 2012-04-02 2012-04-02 Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwen-dung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module
PCT/EP2013/053224 WO2013149757A1 (fr) 2012-04-02 2013-02-19 Électrode arrière multicouche pour une cellule photovoltaïque en couches minces, utilisation de cette électrode pour la fabrication de cellules et de modules solaires en couches minces, cellules et modules photovoltaïques en couches minces dotés de l'électrode arrière multicouche, et procédé de fabrication correspondant

Publications (1)

Publication Number Publication Date
IN2014DN08077A true IN2014DN08077A (fr) 2015-05-01

Family

ID=47740949

Family Applications (1)

Application Number Title Priority Date Filing Date
IN8077DEN2014 IN2014DN08077A (fr) 2012-04-02 2014-09-26

Country Status (9)

Country Link
US (1) US20150068579A1 (fr)
EP (1) EP2834852B8 (fr)
JP (1) JP2015514325A (fr)
KR (1) KR20140148407A (fr)
CN (2) CN111509059A (fr)
AU (1) AU2013242990A1 (fr)
DE (1) DE102012205375A1 (fr)
IN (1) IN2014DN08077A (fr)
WO (1) WO2013149757A1 (fr)

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BR112014017495A8 (pt) * 2012-01-19 2017-07-04 Nuvosun Inc método para formar uma célula fotovoltaica e célula fotovoltaica
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
KR101559539B1 (ko) * 2014-01-21 2015-10-16 영남대학교 산학협력단 태양전지, 태양전지용 배면전극 및 그 제조방법
CN104362191A (zh) * 2014-10-21 2015-02-18 苏州瑞晟纳米科技有限公司 一种制备cigs太阳能电池背电极的方法
KR101638439B1 (ko) * 2015-02-11 2016-07-11 영남대학교 산학협력단 태양전지용 배면전극, 태양전지용 배면전극의 제조방법, 이를 이용한 태양전지 및 태양전지의 제조방법
US10217877B2 (en) 2015-07-27 2019-02-26 Lg Electronics Inc. Solar cell
CN106298989B (zh) * 2016-10-15 2018-05-22 凯盛光伏材料有限公司 一种提高薄膜太阳能电池背电极和吸收层附着力的方法
CN109119494A (zh) * 2018-08-16 2019-01-01 蚌埠兴科玻璃有限公司 铜铟镓硒薄膜太阳能电池铜钼合金背电极及其制备方法
CN109713052A (zh) * 2018-12-27 2019-05-03 中建材蚌埠玻璃工业设计研究院有限公司 一种柔性薄膜太阳能电池用背电极的制备方法
CN110586162A (zh) * 2019-09-24 2019-12-20 华东师范大学 掺杂二硒化钼的层状氮化二钛纳米复合材料及制备方法和应用
KR102077768B1 (ko) * 2019-12-16 2020-02-17 한국과학기술연구원 박막 태양전지 모듈 구조 및 이의 제조 방법
CN112490332B (zh) * 2020-12-17 2022-07-22 福州大学 柔性双阳离子掺杂的CZTSSe太阳电池界面钝化方法
CN115881835B (zh) * 2023-02-08 2024-05-14 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件
EP4693418A1 (fr) * 2023-03-31 2026-02-11 Idemitsu Kosan Co.,Ltd. Élément de conversion photoélectrique, module photovoltaïque, objet volant et procédé de fabrication d'élément de conversion photoélectrique
CN116600580B (zh) * 2023-07-13 2023-11-24 北京曜能科技有限公司 太阳能电池及其制备方法、太阳能电池组件

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DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
FR2820241B1 (fr) * 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
US6681592B1 (en) 2001-02-16 2004-01-27 Hamilton Sundstrand Corporation Electrically driven aircraft cabin ventilation and environmental control system
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
SE0400631D0 (sv) * 2004-03-11 2004-03-11 Forskarpatent I Uppsala Ab Thin film solar cell and manufacturing method
JP2006165386A (ja) * 2004-12-09 2006-06-22 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池及びその作製方法
WO2008153690A1 (fr) * 2007-05-22 2008-12-18 Miasole Appareil et procédé de pulvérisation à vitesse élevée
FR2922364B1 (fr) * 2007-10-12 2014-08-22 Saint Gobain Procede de fabrication d'une electrode en oxyde de molybdene
AT10578U1 (de) * 2007-12-18 2009-06-15 Plansee Metall Gmbh Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht
US20100243043A1 (en) * 2009-03-25 2010-09-30 Chuan-Lung Chuang Light Absorbing Layer Of CIGS Solar Cell And Method For Fabricating The Same
KR101154763B1 (ko) * 2009-09-30 2012-06-18 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US20110240118A1 (en) * 2010-04-02 2011-10-06 Paul Hanlon James Beatty Method and device for scribing a thin film photovoltaic cell
US20110259395A1 (en) * 2010-04-21 2011-10-27 Stion Corporation Single Junction CIGS/CIS Solar Module
WO2011149008A1 (fr) * 2010-05-27 2011-12-01 京セラ株式会社 Dispositif de conversion photoélectrique et procédé pour fabriquer un dispositif de conversion photoélectrique
WO2012024667A2 (fr) * 2010-08-20 2012-02-23 First Solar, Inc. Contact électrique
US8772076B2 (en) * 2010-09-03 2014-07-08 Solopower Systems, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells

Also Published As

Publication number Publication date
US20150068579A1 (en) 2015-03-12
JP2015514325A (ja) 2015-05-18
CN111509059A (zh) 2020-08-07
CN104335357A (zh) 2015-02-04
WO2013149757A1 (fr) 2013-10-10
EP2834852B1 (fr) 2019-12-25
DE102012205375A1 (de) 2013-10-02
EP2834852B8 (fr) 2020-03-04
KR20140148407A (ko) 2014-12-31
AU2013242990A1 (en) 2014-11-20
EP2834852A1 (fr) 2015-02-11

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