IN2014DN08077A - - Google Patents
Info
- Publication number
- IN2014DN08077A IN2014DN08077A IN8077DEN2014A IN2014DN08077A IN 2014DN08077 A IN2014DN08077 A IN 2014DN08077A IN 8077DEN2014 A IN8077DEN2014 A IN 8077DEN2014A IN 2014DN08077 A IN2014DN08077 A IN 2014DN08077A
- Authority
- IN
- India
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012205375A DE102012205375A1 (en) | 2012-04-02 | 2012-04-02 | A multilayer back electrode for a photovoltaic thin film solar cell, the use of the multilayer back electrode for the production of thin film solar cells and modules, photovoltaic thin film solar cells and modules containing the multilayer back electrode, and a method of manufacturing photovoltaic thin film solar cells and modules |
| PCT/EP2013/053224 WO2013149757A1 (en) | 2012-04-02 | 2013-02-19 | Multi-layer back electrode for a photovoltaic thin-film solar cell, use of the same for producing thin-film solar cells and modules, photovoltaic thin-film solar cells and modules containing the multi-layer back electrode and method for the production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014DN08077A true IN2014DN08077A (en) | 2015-05-01 |
Family
ID=47740949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN8077DEN2014 IN2014DN08077A (en) | 2012-04-02 | 2014-09-26 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20150068579A1 (en) |
| EP (1) | EP2834852B8 (en) |
| JP (1) | JP2015514325A (en) |
| KR (1) | KR20140148407A (en) |
| CN (2) | CN104335357A (en) |
| AU (1) | AU2013242990A1 (en) |
| DE (1) | DE102012205375A1 (en) |
| IN (1) | IN2014DN08077A (en) |
| WO (1) | WO2013149757A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MX2014008820A (en) * | 2012-01-19 | 2015-07-06 | Nuvosun Inc | Protective coatings for photovoltaic cells. |
| US9577134B2 (en) * | 2013-12-09 | 2017-02-21 | Sunpower Corporation | Solar cell emitter region fabrication using self-aligned implant and cap |
| KR101559539B1 (en) * | 2014-01-21 | 2015-10-16 | 영남대학교 산학협력단 | Solar cell, back contact for solar cell and method of fabricating the same |
| CN104362191A (en) * | 2014-10-21 | 2015-02-18 | 苏州瑞晟纳米科技有限公司 | CIGS solar battery back electrode manufacturing method |
| KR101638439B1 (en) * | 2015-02-11 | 2016-07-11 | 영남대학교 산학협력단 | Back contact for solar cell, method of fabricating the same, solar cell using the same and method of fabricating the solar cell |
| US10217877B2 (en) * | 2015-07-27 | 2019-02-26 | Lg Electronics Inc. | Solar cell |
| CN106298989B (en) * | 2016-10-15 | 2018-05-22 | 凯盛光伏材料有限公司 | A kind of method for improving back electrode of thin film solar cell and absorbed layer adhesive force |
| CN109119494A (en) * | 2018-08-16 | 2019-01-01 | 蚌埠兴科玻璃有限公司 | Copper-indium-galliun-selenium film solar cell copper molybdenum alloy back electrode and preparation method thereof |
| CN109713052A (en) * | 2018-12-27 | 2019-05-03 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method of flexible thin-film solar cell back electrode |
| CN110586162A (en) * | 2019-09-24 | 2019-12-20 | 华东师范大学 | Layered titanium nitride nano composite material doped with molybdenum diselenide, preparation method and application |
| KR102077768B1 (en) * | 2019-12-16 | 2020-02-17 | 한국과학기술연구원 | Thin-Film Solar Cell Module Structure and Method for Producing the Same |
| CN112490332B (en) * | 2020-12-17 | 2022-07-22 | 福州大学 | Flexible double-cation doped CZTSSe solar cell interface passivation method |
| CN115881835B (en) * | 2023-02-08 | 2024-05-14 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| WO2024203785A1 (en) * | 2023-03-31 | 2024-10-03 | 出光興産株式会社 | Photoelectric conversion element, photovoltaic module, flying object and method for manufacturing photoelectric conversion element |
| CN116600580B (en) * | 2023-07-13 | 2023-11-24 | 北京曜能科技有限公司 | Solar cell, preparation method thereof and solar cell module |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4442824C1 (en) | 1994-12-01 | 1996-01-25 | Siemens Ag | Solar cell having higher degree of activity |
| FR2820241B1 (en) * | 2001-01-31 | 2003-09-19 | Saint Gobain | TRANSPARENT SUBSTRATE PROVIDED WITH AN ELECTRODE |
| US6681592B1 (en) | 2001-02-16 | 2004-01-27 | Hamilton Sundstrand Corporation | Electrically driven aircraft cabin ventilation and environmental control system |
| US7053294B2 (en) * | 2001-07-13 | 2006-05-30 | Midwest Research Institute | Thin-film solar cell fabricated on a flexible metallic substrate |
| SE0400631D0 (en) * | 2004-03-11 | 2004-03-11 | Forskarpatent I Uppsala Ab | Thin film solar cell and manufacturing method |
| JP2006165386A (en) * | 2004-12-09 | 2006-06-22 | Showa Shell Sekiyu Kk | Cis system thin film solar cell and method for manufacturing the same |
| WO2008153690A1 (en) * | 2007-05-22 | 2008-12-18 | Miasole | High rate sputtering apparatus and method |
| FR2922364B1 (en) * | 2007-10-12 | 2014-08-22 | Saint Gobain | PROCESS FOR PRODUCING A MOLYBDENE OXIDE ELECTRODE |
| AT10578U1 (en) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | DUNGOUS SOLAR CELL WITH MOLYBDAN-CONTAINING ELECTRODE LAYER |
| US20100243043A1 (en) * | 2009-03-25 | 2010-09-30 | Chuan-Lung Chuang | Light Absorbing Layer Of CIGS Solar Cell And Method For Fabricating The Same |
| KR101154763B1 (en) * | 2009-09-30 | 2012-06-18 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
| US20110240118A1 (en) * | 2010-04-02 | 2011-10-06 | Paul Hanlon James Beatty | Method and device for scribing a thin film photovoltaic cell |
| US20110259395A1 (en) * | 2010-04-21 | 2011-10-27 | Stion Corporation | Single Junction CIGS/CIS Solar Module |
| JPWO2011149008A1 (en) * | 2010-05-27 | 2013-07-25 | 京セラ株式会社 | Photoelectric conversion device and method for manufacturing photoelectric conversion device |
| WO2012024667A2 (en) * | 2010-08-20 | 2012-02-23 | First Solar, Inc. | Electrical contact |
| US8772076B2 (en) * | 2010-09-03 | 2014-07-08 | Solopower Systems, Inc. | Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells |
-
2012
- 2012-04-02 DE DE102012205375A patent/DE102012205375A1/en not_active Withdrawn
-
2013
- 2013-02-19 JP JP2015503793A patent/JP2015514325A/en active Pending
- 2013-02-19 KR KR1020147027726A patent/KR20140148407A/en not_active Application Discontinuation
- 2013-02-19 US US14/389,894 patent/US20150068579A1/en not_active Abandoned
- 2013-02-19 AU AU2013242990A patent/AU2013242990A1/en not_active Abandoned
- 2013-02-19 WO PCT/EP2013/053224 patent/WO2013149757A1/en active Application Filing
- 2013-02-19 CN CN201380028772.XA patent/CN104335357A/en active Pending
- 2013-02-19 EP EP13705161.1A patent/EP2834852B8/en active Active
- 2013-02-19 CN CN202010310061.3A patent/CN111509059A/en active Pending
-
2014
- 2014-09-26 IN IN8077DEN2014 patent/IN2014DN08077A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20150068579A1 (en) | 2015-03-12 |
| JP2015514325A (en) | 2015-05-18 |
| AU2013242990A1 (en) | 2014-11-20 |
| CN104335357A (en) | 2015-02-04 |
| DE102012205375A1 (en) | 2013-10-02 |
| EP2834852B1 (en) | 2019-12-25 |
| EP2834852A1 (en) | 2015-02-11 |
| WO2013149757A1 (en) | 2013-10-10 |
| EP2834852B8 (en) | 2020-03-04 |
| CN111509059A (en) | 2020-08-07 |
| KR20140148407A (en) | 2014-12-31 |