CN104362191A - CIGS solar battery back electrode manufacturing method - Google Patents
CIGS solar battery back electrode manufacturing method Download PDFInfo
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- CN104362191A CN104362191A CN201410562463.7A CN201410562463A CN104362191A CN 104362191 A CN104362191 A CN 104362191A CN 201410562463 A CN201410562463 A CN 201410562463A CN 104362191 A CN104362191 A CN 104362191A
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- back electrode
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- cigs
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- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a CIGS solar battery back electrode manufacturing method. The back electrode is characterized by comprising three layers of Mo films, has high substrate adhesion and conductivity and is capable of passivating an absorption layer and improving the photoelectric conversion efficiency of a CIGS solar battery. The back electrode comprises an adhering layer, a conducting layer and a passivating layer; the adhering layer is arranged on a substrate to allow the substrate to adhere to the conducting layer well; the conducting layer is of an Mo film with the structure different to that of the adhering layer, has high conductivity and is used for collecting electrons produced by the absorption layer; the passivating layer is of an Mo film with different structure, plays a role of passivating the CIGS absorption layer and improves the performance of the solar battery. The Mo film combined back electrode has the advantages of low cost, simple equipment process, easiness for processing and small film thickness, is capable of improving the CIGS solar battery performance and has promised application prospect.
Description
Technical field
The invention belongs to area of solar cell, relate to a kind of process preparing CIGS back electrode of solar cell.
Background technology
With worldwide energy crisis and ecological deterioration, solar cell receives increasingly extensive attention and achieves significant progress.Wherein CIGS solar cell because of its have few with material, cost is low, conversion ratio is high and the advantage such as undamped, and becomes the potential a kind of battery of following most.CIGS battery is generally made up of substrate, back electrode, CIGS absorbed layer, CdS resilient coating, ZnO Window layer, transparency electrode and aluminium electrode.Wherein back electrode generally adopts Mo metallic film, and play the effect connecting substrate and absorbed layer and collect conduction electron, therefore its photoelectric conversion efficiency tool of structure and properties to battery has a great impact.Mo metallic film back electrode generally adopts magnetron sputtering technique to prepare, and its preparation technology develops into the double-deck Mo thin-film technique of two-part by one-part form individual layer Mo thin-film technique, and the adhesive property of back electrode and substrate and electric property thereof are obtained for larger improvement.But high performance solar batteries requires more excellent electrode, it not only wants it to have good cementability and conductivity, can also improve CIGS absorbed layer simultaneously, improve the performance of battery.The present invention is intended to meet this requirement, utilize syllogic sputtering technology to deposit Mo film, this electrode not only has excellent cementability and conductivity, but also can reduce the compound of electron hole pair on electrode, improve battery open circuit voltage, and then improve the electricity conversion of CIGS solar cell.
Summary of the invention
The object of the present invention is to provide a kind of back electrode with the CIGS battery of premium properties, have employed the technological parameter of three groups of different magnetron sputtering deposition Mo, deposited three layers of Mo film that structural behaviour is different on a glass substrate, the effect played bonding substrate respectively, collect electron conduction, reduce charge recombination and bonding absorbed layer.
The present invention is a kind of back electrode of CIGS solar cell, and its feature comprises:
-substrate binding layer (1), this adhesive linkage micro-structural is coarse loose, and Mo layer and substrate can be made to have good cementability;
-conductive layer (2), this conductive layer is produced on adhesive linkage (1), is the film with dense microstructure, has good conductivity;
-passivation layer (3), this passivation layer (3) is produced on conductive layer (2), has coarse microscopic appearance, its thickness is very thin, resistance is comparatively large, has modification to conductive layer (2), has passivation to the cigs layer grown on it;
Another: the film of three layers of different structure all adopts magnetron sputtering deposition method, and material all adopts same metal M o;
Good effect of the present invention is: these three layers of Mo film preparation composite back electrode can improve open circuit voltage and the fill factor, curve factor of CIGS solar cell, thus improves the transformation efficiency of battery; These three layers of Mo Film laminated electrodes adopt commaterial and same equipment in addition, only need parameter when changing sputtering sedimentation, all more simple and reliable compared with other trilamellar membrane combination electrode Design and materials.
Accompanying drawing explanation
For further illustrating content of the present invention and feature, below in conjunction with accompanying drawing, the present invention is explained in detail, wherein:
Fig. 1 is the schematic diagram of device of the present invention;
Fig. 2 represents the microscopic appearance of combination electrode three-layer thin-film;
Embodiment
For making object of the present invention, technical scheme and advantage clearly understand, also combining below in conjunction with specific embodiment and being specifically described with reference to accompanying drawing.
As shown in Figure 1, Fig. 1 is trilamellar membrane combined electrode structure schematic diagram provided by the invention.This device comprises-substrate binding layer (1);-conductive layer (2); This conductive layer (2) is produced on substrate binding layer (1);-passivation layer (3), this passivation layer is produced on conductive layer (2); .
The Mo film that described substrate binding layer (1) is large resistance, rustic, adopts magnetron sputtering method to be deposited on substrate.Substrate binding layer (1) is also adopt magnetically controlled sputter method depositing conducting layer (2) above, but adopt the technological parameter different from time deposition substrate adhesive linkage (1), the thickness of this conductive layer is between 100-1000nm under normal circumstances, square resistance is less than 1 ohm, passivation layer (3) above conductive layer (2) adopts magnetically controlled sputter method to prepare equally, but take and front two-layer different magnetron sputtering parameter, this passivation layer still adopts Mo film, and its thickness is between 30-70nm.
Experimental example:
1. the substrate of cleaning for depositing combination electrode, for soda lime glass substrate, its technique is as follows:
In service sink, add electronics cleaning fluid and pure water, then heating boils sheet glass 2 hours, is then poured out by cleaning fluid, and repeatedly rinses with pure water; Add acetone afterwards, carry out Ultrasonic Cleaning 15min; Then acetone is poured out, then add isopropyl alcohol, again carry out Ultrasonic Cleaning 15 minutes; Finally isopropyl alcohol is poured out, add pure water repeatedly after Ultrasonic Cleaning twice, glass is sunk to the bottom baking 2 hours for subsequent use.
2. the substrate cleaned up is put into magnetron sputtering apparatus vacuum chamber, enable vacuum system and vacuumize vacuum chamber, the magnetron sputtering technique that brings into operation after vacuum to 2.0E-4Pa deposition Mo film, prepares substrate binding layer (1).Deposition parameter is: sputtering power: 50W-400w; Sputtering pressure 0.2Pa-3Pa; Deposit thickness: 50nm ~ 500nm
3. prepare after substrate binding layer (1) completes, only change technological parameter and continue to prepare conductive layer (2), this conductive layer deposition is on substrate binding layer (1), and deposition parameter is: sputtering power 50W-400w; Sputtering pressure: 0.2Pa-3Pa; Deposit thickness: 100-1000nm;
4., after conductive layer 2 deposit thickness reaches target, continue to change technological parameter and then prepare passivation layer (3).Deposition parameter is: sputtering power 50W-400w, sputtering pressure: 0.2Pa-3Pa, deposit thickness 10nm-200nm.
This combination electrode and substrate have good cementability, and its square resistance is only 0.3 ohm simultaneously, has extraordinary conductivity, due to the effect of passivation layer, uses the CIGS battery of the electrode fabrication of this structure to have higher open circuit voltage and electricity conversion.
Above-describedly specifically execute example; object of the present invention, technical scheme and positive effect are further described; be understood that; the foregoing is only of the present invention and specifically execute example; be not limited to the present invention; all do within principle of the present invention anyly to repair and improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1., for a composite back electrode for CIGS solar cell, its feature comprises:
Adhesive linkage, this adhesive linkage is arranged on substrate, connect substrate and on conductive layer, device and substrate is made to have good caking property and not peel off conductive layer, this conductive layer is arranged on adhesive linkage, and this conductive layer is identical with adhesive linkage material, but has different microstructures and electrical property; Passivation layer, this passivation layer is arranged on the electrically conductive, is the transition zone with passivation.
2. as claimed in claim 1 based on the composite back electrode of CIGS hull cell, it is characterized in that, adhesive linkage is wherein the Mo film made by magnetron sputtering deposition method, has coarse loose microstructure, and it is large to have resistance, the feature that bonding force is strong.
3., as claimed in claim 1 based on the composite back electrode of CIGS hull cell, it is characterized in that, conductive layer is wherein the Mo film with fine and close microstructure and small resistor.
4., as claimed in claim 1 based on the composite back electrode of CIGS hull cell, it is characterized in that, passivation layer is wherein the Mo film with coarse loose microstructure and large resistance, and its thickness is between 10-200nm.
5. as claimed in claim 1 based on the composite back electrode of CIGS hull cell, the composite back electrode of its three layers of Mo film compositions uses same target in same magnetron sputtering device, adopts different technical parameters to make continuously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410562463.7A CN104362191A (en) | 2014-10-21 | 2014-10-21 | CIGS solar battery back electrode manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410562463.7A CN104362191A (en) | 2014-10-21 | 2014-10-21 | CIGS solar battery back electrode manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104362191A true CN104362191A (en) | 2015-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410562463.7A Pending CN104362191A (en) | 2014-10-21 | 2014-10-21 | CIGS solar battery back electrode manufacturing method |
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| Country | Link |
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| CN (1) | CN104362191A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355676A (en) * | 2015-11-18 | 2016-02-24 | 北京四方创能光电科技有限公司 | Back electrode structure of flexible CIGS thin-film solar cell |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881733A (en) * | 2012-10-19 | 2013-01-16 | 上海太阳能电池研究与发展中心 | Thin-film solar cell composite back electrode utilizing polymers as substrate and preparation method |
| CN102983219A (en) * | 2012-12-03 | 2013-03-20 | 深圳先进技术研究院 | Preparation method of thin-film solar cell component |
| WO2013081343A1 (en) * | 2011-11-29 | 2013-06-06 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
| WO2013149757A1 (en) * | 2012-04-02 | 2013-10-10 | Robert Bosch Gmbh | Multi-layer back electrode for a photovoltaic thin-film solar cell, use of the same for producing thin-film solar cells and modules, photovoltaic thin-film solar cells and modules containing the multi-layer back electrode and method for the production thereof |
| CN103354246A (en) * | 2013-07-10 | 2013-10-16 | 尚越光电科技有限公司 | CIGS (Copper Indium Gallium Selenium) solar cell back-electrode Mo film and preparation technology thereof |
| CN103579383A (en) * | 2012-08-09 | 2014-02-12 | 三星Sdi株式会社 | Solar cell and manufacturing method thereof |
| KR20140058794A (en) * | 2012-11-06 | 2014-05-15 | 엘에스엠트론 주식회사 | Thin film solar cell and method of fabricating the same |
-
2014
- 2014-10-21 CN CN201410562463.7A patent/CN104362191A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013081343A1 (en) * | 2011-11-29 | 2013-06-06 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
| WO2013149757A1 (en) * | 2012-04-02 | 2013-10-10 | Robert Bosch Gmbh | Multi-layer back electrode for a photovoltaic thin-film solar cell, use of the same for producing thin-film solar cells and modules, photovoltaic thin-film solar cells and modules containing the multi-layer back electrode and method for the production thereof |
| CN103579383A (en) * | 2012-08-09 | 2014-02-12 | 三星Sdi株式会社 | Solar cell and manufacturing method thereof |
| CN102881733A (en) * | 2012-10-19 | 2013-01-16 | 上海太阳能电池研究与发展中心 | Thin-film solar cell composite back electrode utilizing polymers as substrate and preparation method |
| KR20140058794A (en) * | 2012-11-06 | 2014-05-15 | 엘에스엠트론 주식회사 | Thin film solar cell and method of fabricating the same |
| CN102983219A (en) * | 2012-12-03 | 2013-03-20 | 深圳先进技术研究院 | Preparation method of thin-film solar cell component |
| CN103354246A (en) * | 2013-07-10 | 2013-10-16 | 尚越光电科技有限公司 | CIGS (Copper Indium Gallium Selenium) solar cell back-electrode Mo film and preparation technology thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355676A (en) * | 2015-11-18 | 2016-02-24 | 北京四方创能光电科技有限公司 | Back electrode structure of flexible CIGS thin-film solar cell |
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Application publication date: 20150218 |