IN2014CN02460A - - Google Patents

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Publication number
IN2014CN02460A
IN2014CN02460A IN2460CHN2014A IN2014CN02460A IN 2014CN02460 A IN2014CN02460 A IN 2014CN02460A IN 2460CHN2014 A IN2460CHN2014 A IN 2460CHN2014A IN 2014CN02460 A IN2014CN02460 A IN 2014CN02460A
Authority
IN
India
Prior art keywords
power switch
block power
esd
protection circuitry
esd protection
Prior art date
Application number
Other languages
English (en)
Inventor
Mikhail Popovich
Yuan Cheng Christopher Pan
Boris Andreev
Junmou Zhang
Reza Jalilizeinali
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014CN02460A publication Critical patent/IN2014CN02460A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49105—Switch making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IN2460CHN2014 2011-11-01 2012-11-01 IN2014CN02460A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/286,498 US8988839B2 (en) 2011-11-01 2011-11-01 Block power switch with embedded electrostatic discharge (ESD) protection and adaptive body biasing
PCT/US2012/063095 WO2013067205A1 (en) 2011-11-01 2012-11-01 Block power switch with embedded electrostatic discharge (esd) protection and adaptive body biasing

Publications (1)

Publication Number Publication Date
IN2014CN02460A true IN2014CN02460A (enrdf_load_stackoverflow) 2015-08-07

Family

ID=47436167

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2460CHN2014 IN2014CN02460A (enrdf_load_stackoverflow) 2011-11-01 2012-11-01

Country Status (8)

Country Link
US (1) US8988839B2 (enrdf_load_stackoverflow)
EP (1) EP2774179B1 (enrdf_load_stackoverflow)
JP (1) JP5823631B2 (enrdf_load_stackoverflow)
KR (1) KR101516303B1 (enrdf_load_stackoverflow)
CN (1) CN103907186B (enrdf_load_stackoverflow)
ES (1) ES2814350T3 (enrdf_load_stackoverflow)
IN (1) IN2014CN02460A (enrdf_load_stackoverflow)
WO (1) WO2013067205A1 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9300352B2 (en) * 2013-01-30 2016-03-29 Broadcom Corporation Transceiver with board-level configuration of on-chip or external transmit/receive switch
US9466599B2 (en) 2013-09-18 2016-10-11 Nxp B.V. Static current in IO for ultra-low power applications
US9647551B2 (en) 2015-08-14 2017-05-09 Qualcomm Incorporated Switched power control circuits for controlling the rate of providing voltages to powered circuits, and related systems and methods
KR20170052751A (ko) * 2015-11-03 2017-05-15 삼성전자주식회사 반도체 장치에서의 통합 보호회로
US10262829B2 (en) 2015-12-14 2019-04-16 General Electric Company Protection circuit assembly and method for high voltage systems
US10277268B2 (en) * 2017-06-02 2019-04-30 Psemi Corporation Method and apparatus for switching of shunt and through switches of a transceiver
TWI695559B (zh) * 2018-12-20 2020-06-01 大陸商北京集創北方科技股份有限公司 靜電放電防護電路、感測裝置及電子裝置
DE102020104129A1 (de) * 2019-05-03 2020-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Logikpufferschaltung und verfahren
US10979049B2 (en) * 2019-05-03 2021-04-13 Taiwan Semiconductor Manufacturing Company Ltd. Logic buffer circuit and method
US20250246900A1 (en) * 2024-01-31 2025-07-31 Qualcomm Incorporated Low leakage esd structure suitable for high impedance i/o pins

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US6236250B1 (en) * 1999-11-10 2001-05-22 Intel Corporation Circuit for independent power-up sequencing of a multi-voltage chip
JP3899984B2 (ja) * 2002-04-09 2007-03-28 富士電機デバイステクノロジー株式会社 過電圧保護回路
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US7092307B2 (en) * 2003-04-02 2006-08-15 Qualcomm Inc. Leakage current reduction for CMOS memory circuits
KR100761358B1 (ko) * 2004-06-03 2007-09-27 주식회사 하이닉스반도체 반도체 기억 소자 및 그의 내부 전압 조절 방법
JP4647294B2 (ja) * 2004-11-26 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
KR101516303B1 (ko) 2015-05-04
EP2774179B1 (en) 2020-07-01
US20130105951A1 (en) 2013-05-02
CN103907186A (zh) 2014-07-02
KR20140099887A (ko) 2014-08-13
ES2814350T3 (es) 2021-03-26
CN103907186B (zh) 2017-05-31
EP2774179A1 (en) 2014-09-10
JP2015504594A (ja) 2015-02-12
US8988839B2 (en) 2015-03-24
WO2013067205A1 (en) 2013-05-10
JP5823631B2 (ja) 2015-11-25

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