IN2012DN02514A - - Google Patents
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- Publication number
- IN2012DN02514A IN2012DN02514A IN2514DEN2012A IN2012DN02514A IN 2012DN02514 A IN2012DN02514 A IN 2012DN02514A IN 2514DEN2012 A IN2514DEN2012 A IN 2514DEN2012A IN 2012DN02514 A IN2012DN02514 A IN 2012DN02514A
- Authority
- IN
- India
- Prior art keywords
- retaining member
- seed
- seed retaining
- polycrystalline silicon
- breaking
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000001902 propagating effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/24—Stationary reactors without moving elements inside
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009202389A JP5431074B2 (ja) | 2009-09-02 | 2009-09-02 | シード保持部材及びそのシード保持部材を用いた多結晶シリコン製造方法 |
| PCT/JP2010/064986 WO2011027803A1 (ja) | 2009-09-02 | 2010-09-02 | シード保持部材及びそのシード保持部材を用いた多結晶シリコン製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN02514A true IN2012DN02514A (ja) | 2015-08-28 |
Family
ID=43649337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN2514DEN2012 IN2012DN02514A (ja) | 2009-09-02 | 2010-09-02 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20120186300A1 (ja) |
| EP (1) | EP2474504A1 (ja) |
| JP (1) | JP5431074B2 (ja) |
| KR (1) | KR20120091034A (ja) |
| CN (1) | CN102482104A (ja) |
| IN (1) | IN2012DN02514A (ja) |
| SG (1) | SG178958A1 (ja) |
| TW (1) | TW201129500A (ja) |
| WO (1) | WO2011027803A1 (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010003064A1 (de) * | 2010-03-19 | 2011-09-22 | Wacker Chemie Ag | Graphitelektrode |
| JP5507493B2 (ja) * | 2011-05-09 | 2014-05-28 | 信越化学工業株式会社 | シリコン芯線ホルダおよび多結晶シリコンの製造方法 |
| JP2013006747A (ja) * | 2011-06-27 | 2013-01-10 | Toyo Tanso Kk | シード保持部材、多結晶シリコン製造装置、及びシード保持部材の製造方法 |
| KR101435875B1 (ko) | 2012-03-12 | 2014-09-01 | (주)아폴로테크 | 폴리실리콘 제조용 흑연척 재활용 방법 |
| JP5761099B2 (ja) * | 2012-03-28 | 2015-08-12 | 三菱マテリアル株式会社 | 多結晶シリコン反応炉 |
| DE102014201096A1 (de) * | 2014-01-22 | 2015-07-23 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
| JP6373724B2 (ja) * | 2014-11-04 | 2018-08-15 | 株式会社トクヤマ | 芯線ホルダ及びシリコンの製造方法 |
| CN110352177B (zh) * | 2017-03-08 | 2023-08-01 | 株式会社德山 | 多晶硅加工品的制造方法 |
| CN111646475B (zh) * | 2020-06-03 | 2024-06-11 | 洛阳中硅高科技有限公司 | 一体式石墨底座和电子级多晶硅生产系统 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960003734B1 (ko) * | 1990-06-27 | 1996-03-21 | 유니온 카바이드 코팅즈 서비스 테크놀러지 코포레이션 | 다결정 실리콘 제조에서의 스타터 필라멘트용 흑연 척 및 그 보호 방법 |
| JP2867306B2 (ja) | 1991-11-15 | 1999-03-08 | 三菱マテリアルポリシリコン株式会社 | 半導体級多結晶シリコンの製造方法とその装置 |
| JP3449201B2 (ja) * | 1997-11-28 | 2003-09-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
| JP3559244B2 (ja) * | 2001-01-18 | 2004-08-25 | 住友チタニウム株式会社 | ロッド解体機 |
| JP2002260915A (ja) * | 2001-02-28 | 2002-09-13 | Matsushita Electric Ind Co Ltd | プラスチック磁石 |
| JP5119950B2 (ja) * | 2008-01-28 | 2013-01-16 | パナソニック株式会社 | 軒樋支持具装置 |
-
2009
- 2009-09-02 JP JP2009202389A patent/JP5431074B2/ja not_active Expired - Fee Related
-
2010
- 2010-09-02 IN IN2514DEN2012 patent/IN2012DN02514A/en unknown
- 2010-09-02 SG SG2012014882A patent/SG178958A1/en unknown
- 2010-09-02 EP EP10813751A patent/EP2474504A1/en not_active Withdrawn
- 2010-09-02 TW TW099129691A patent/TW201129500A/zh unknown
- 2010-09-02 WO PCT/JP2010/064986 patent/WO2011027803A1/ja active Application Filing
- 2010-09-02 US US13/392,688 patent/US20120186300A1/en not_active Abandoned
- 2010-09-02 KR KR1020127008185A patent/KR20120091034A/ko not_active Application Discontinuation
- 2010-09-02 CN CN2010800390661A patent/CN102482104A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP2474504A1 (en) | 2012-07-11 |
| KR20120091034A (ko) | 2012-08-17 |
| TW201129500A (en) | 2011-09-01 |
| CN102482104A (zh) | 2012-05-30 |
| JP5431074B2 (ja) | 2014-03-05 |
| JP2011051837A (ja) | 2011-03-17 |
| SG178958A1 (en) | 2012-04-27 |
| WO2011027803A1 (ja) | 2011-03-10 |
| US20120186300A1 (en) | 2012-07-26 |
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