IN2012DN00641A - - Google Patents

Download PDF

Info

Publication number
IN2012DN00641A
IN2012DN00641A IN641DEN2012A IN2012DN00641A IN 2012DN00641 A IN2012DN00641 A IN 2012DN00641A IN 641DEN2012 A IN641DEN2012 A IN 641DEN2012A IN 2012DN00641 A IN2012DN00641 A IN 2012DN00641A
Authority
IN
India
Prior art keywords
overlying
buffer layer
substrate
array
nanorods
Prior art date
Application number
Other languages
English (en)
Inventor
Selvamanickam Venkat
Majkic Goran
Marchevsky Maxim
Original Assignee
Univ Houston System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Houston System filed Critical Univ Houston System
Publication of IN2012DN00641A publication Critical patent/IN2012DN00641A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0828—Introducing flux pinning centres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
IN641DEN2012 2009-07-28 2010-07-27 IN2012DN00641A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22922509P 2009-07-28 2009-07-28
PCT/US2010/043411 WO2011017112A2 (en) 2009-07-28 2010-07-27 Superconducting article with prefabricated nanostructure for improved flux pinning

Publications (1)

Publication Number Publication Date
IN2012DN00641A true IN2012DN00641A (zh) 2015-08-21

Family

ID=43527576

Family Applications (1)

Application Number Title Priority Date Filing Date
IN641DEN2012 IN2012DN00641A (zh) 2009-07-28 2010-07-27

Country Status (8)

Country Link
US (1) US8926868B2 (zh)
EP (1) EP2460197B1 (zh)
JP (1) JP5858912B2 (zh)
KR (1) KR101485060B1 (zh)
CN (2) CN102484197B (zh)
CA (1) CA2768516C (zh)
IN (1) IN2012DN00641A (zh)
WO (1) WO2011017112A2 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
TW201228985A (en) * 2011-01-05 2012-07-16 Univ Nat Cheng Kung Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same
US9362025B1 (en) 2012-02-08 2016-06-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
US9564258B2 (en) 2012-02-08 2017-02-07 Superconductor Technologies, Inc. Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same
DE102013210940B3 (de) * 2013-06-12 2014-07-03 THEVA DüNNSCHICHTTECHNIK GMBH Beschichtung technischer Substrate zur Herstellung supraleitender Schichten mit hoher Sprungtemperatur
US9410394B2 (en) 2013-12-11 2016-08-09 Schlumberger Technology Corporation Methods for minimizing overdisplacement of proppant in fracture treatments
WO2016149543A1 (en) * 2015-03-17 2016-09-22 The University Of Houston System Improved superconductor compositions
JPWO2017217487A1 (ja) * 2016-06-16 2019-04-11 株式会社フジクラ 酸化物超電導線材及びその製造方法
CN108963067B (zh) * 2018-07-27 2022-04-29 武汉工程大学 一种ReBa2Cu3O7-x超导薄膜上制备钉扎层的方法
CA3115523A1 (en) * 2018-10-14 2020-06-11 Metal Oxide Technologies, Llc. Superconductor flux pinning without columnar defects
WO2020172201A2 (en) * 2019-02-18 2020-08-27 Superpower, Inc. Fabrication of superconductor wire
CN110444658B (zh) * 2019-08-13 2020-08-11 中国科学院上海微系统与信息技术研究所 基于AlMn合金超导薄膜的TES微量能器及制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0262083A (ja) * 1988-08-29 1990-03-01 Canon Inc ジョセフソン接合の形成方法およびジョセフソン接合素子
DE69211117T2 (de) * 1992-01-28 1996-12-12 Ibm Flussschlauch-Verankerungsstrukturen für supraleitende Dünnschichten und Methoden ihrer Herstellung
JP2747173B2 (ja) * 1992-08-07 1998-05-06 日本電信電話株式会社 酸化物高温超伝導体単結晶薄膜形成方法
DE69403104T2 (de) * 1993-02-15 1997-10-30 Sumitomo Electric Industries Verfahren zum Erzeugen einer strukturierten oxydsupraleitenden Dünnschicht
US5897945A (en) * 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6190752B1 (en) 1997-11-13 2001-02-20 Board Of Trustees Of The Leland Stanford Junior University Thin films having rock-salt-like structure deposited on amorphous surfaces
US8119571B2 (en) * 2006-08-03 2012-02-21 Amit Goyal High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods
JP3622147B2 (ja) * 2001-06-19 2005-02-23 独立行政法人産業技術総合研究所 柱状ピン止め中心を有する超伝導薄膜及びその製造方法
US20040266628A1 (en) * 2003-06-27 2004-12-30 Superpower, Inc. Novel superconducting articles, and methods for forming and using same
JP4495426B2 (ja) * 2003-08-29 2010-07-07 独立行政法人科学技術振興機構 超伝導膜およびその製造方法
US8178165B2 (en) 2005-01-21 2012-05-15 The Regents Of The University Of California Method for fabricating a long-range ordered periodic array of nano-features, and articles comprising same
JP2006233247A (ja) * 2005-02-23 2006-09-07 Fujikura Ltd 薄膜形成装置
US8034745B2 (en) * 2005-08-01 2011-10-11 Amit Goyal High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods
US20070238619A1 (en) * 2005-09-06 2007-10-11 Superpower, Inc. Superconductor components
JP2010533985A (ja) * 2007-07-19 2010-10-28 カリフォルニア インスティテュート オブ テクノロジー 半導体の規則配列構造
JP5017161B2 (ja) * 2008-03-27 2012-09-05 株式会社東芝 酸化物超電導体
US7919435B2 (en) * 2008-09-30 2011-04-05 Ut-Battelle, Llc Superconductor films with improved flux pinning and reduced AC losses

Also Published As

Publication number Publication date
US20110028328A1 (en) 2011-02-03
JP2013501313A (ja) 2013-01-10
EP2460197B1 (en) 2016-03-16
CN102484197A (zh) 2012-05-30
CN106065474B (zh) 2019-05-28
KR20120051688A (ko) 2012-05-22
WO2011017112A2 (en) 2011-02-10
JP5858912B2 (ja) 2016-02-10
EP2460197A2 (en) 2012-06-06
EP2460197A4 (en) 2014-01-15
CN102484197B (zh) 2016-08-10
KR101485060B1 (ko) 2015-01-21
WO2011017112A3 (en) 2011-04-28
CA2768516A1 (en) 2011-02-10
CN106065474A (zh) 2016-11-02
CA2768516C (en) 2015-07-14
US8926868B2 (en) 2015-01-06

Similar Documents

Publication Publication Date Title
IN2012DN00641A (zh)
WO2007103249A3 (en) Methods of forming thermoelectric devices using islands of thermoelectric material and related structures
WO2011032187A3 (en) Magnetic tunnel junction device and fabrication
WO2012109438A3 (en) Seed layer passivation
WO2010138811A3 (en) Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
WO2012057512A3 (ko) 화합물 반도체 장치 및 그 제조 방법
EP2420599A4 (en) SUBSTRATE, SUBSTRATE HAVING THIN FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
WO2011094211A3 (en) Reducing latency in serializer-deserializer links
WO2008024380A3 (en) Organic electronic devices
WO2009023148A3 (en) Nanowire electronic devices and method for producing the same
TW201130113A (en) System comprising a semiconductor device and structure
WO2011156031A3 (en) Method and system for providing inverted dual magnetic tunneling junction elements
SG10201805793VA (en) System comprising a semiconductor device and structure
WO2011028359A3 (en) Mems device with stress isolation and method of fabrication
WO2008063337A3 (en) Semiconductor-on-diamond devices and associated methods
EP2543752A4 (en) SUBSTRATE WITH INTERNAL REFORM FOR EPITACTIC GROWTH, INTERNAL REFORMING SUBSTRATE AND A MULTILAYER FILM, SEMICONDUCTOR ELEMENT, MASS SUBSTRATE SUBSTRATE, AND METHOD OF MANUFACTURING THEREOF
WO2012021227A3 (en) Heterojunction solar cell
EP2378570A3 (en) Light emitting device with a stepped light extracting structure and method of manufacturing the same
EP2377976A4 (en) GROUP III NITRIDE SUBSTRATE, SEMICONDUCTOR DEVICE COMPRISING SAME, AND METHOD FOR MANUFACTURING SURFACE TREATED GROUP III NITRIDE SUBSTRATE
WO2012141692A3 (en) Method for transferring a uniform phosphor layer on an article and light-emitting structure fabricated by the method
EP2296185A4 (en) Substrate for thin-film photoelectric conversion device, thin-film photoelectric conversion including the same, and method for producing substrate for thin-film photoelectric conversion device
WO2013019061A3 (ko) 에피택셜 공정을 위한 반도체 제조설비
GB2488908A (en) Tunnel junction via
MY151538A (en) Light-emitting device with improved electrode structures
MY160373A (en) Bonding structure and method