IN2012DN00641A - - Google Patents
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- Publication number
- IN2012DN00641A IN2012DN00641A IN641DEN2012A IN2012DN00641A IN 2012DN00641 A IN2012DN00641 A IN 2012DN00641A IN 641DEN2012 A IN641DEN2012 A IN 641DEN2012A IN 2012DN00641 A IN2012DN00641 A IN 2012DN00641A
- Authority
- IN
- India
- Prior art keywords
- overlying
- buffer layer
- substrate
- array
- nanorods
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 3
- 239000002073 nanorod Substances 0.000 abstract 3
- 239000002096 quantum dot Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0828—Introducing flux pinning centres
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22922509P | 2009-07-28 | 2009-07-28 | |
| PCT/US2010/043411 WO2011017112A2 (en) | 2009-07-28 | 2010-07-27 | Superconducting article with prefabricated nanostructure for improved flux pinning |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DN00641A true IN2012DN00641A (https=) | 2015-08-21 |
Family
ID=43527576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN641DEN2012 IN2012DN00641A (https=) | 2009-07-28 | 2010-07-27 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8926868B2 (https=) |
| EP (1) | EP2460197B1 (https=) |
| JP (1) | JP5858912B2 (https=) |
| KR (1) | KR101485060B1 (https=) |
| CN (2) | CN102484197B (https=) |
| CA (1) | CA2768516C (https=) |
| IN (1) | IN2012DN00641A (https=) |
| WO (1) | WO2011017112A2 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442629B2 (en) * | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| TW201228985A (en) * | 2011-01-05 | 2012-07-16 | Univ Nat Cheng Kung | Nanorod-containing precursor powder, nanorod-containing superconductor bulk and method for manufacturing the same |
| US9362025B1 (en) | 2012-02-08 | 2016-06-07 | Superconductor Technologies, Inc. | Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same |
| US9564258B2 (en) | 2012-02-08 | 2017-02-07 | Superconductor Technologies, Inc. | Coated conductor high temperature superconductor carrying high critical current under magnetic field by intrinsic pinning centers, and methods of manufacture of same |
| DE102013210940B3 (de) * | 2013-06-12 | 2014-07-03 | THEVA DüNNSCHICHTTECHNIK GMBH | Beschichtung technischer Substrate zur Herstellung supraleitender Schichten mit hoher Sprungtemperatur |
| US9410394B2 (en) | 2013-12-11 | 2016-08-09 | Schlumberger Technology Corporation | Methods for minimizing overdisplacement of proppant in fracture treatments |
| WO2016149543A1 (en) * | 2015-03-17 | 2016-09-22 | The University Of Houston System | Improved superconductor compositions |
| JPWO2017217487A1 (ja) * | 2016-06-16 | 2019-04-11 | 株式会社フジクラ | 酸化物超電導線材及びその製造方法 |
| CN108963067B (zh) * | 2018-07-27 | 2022-04-29 | 武汉工程大学 | 一种ReBa2Cu3O7-x超导薄膜上制备钉扎层的方法 |
| EP3863772A4 (en) * | 2018-10-14 | 2022-08-10 | Metal Oxide Technologies, LLC. | SUPERCONDUCTING RIVER ANCHORING WITHOUT COLUMNAL DEFECTS |
| EP3928359B8 (en) * | 2019-02-18 | 2025-08-06 | Superpower, Inc. | Superconductor wire and fabrication thereof |
| CN110444658B (zh) * | 2019-08-13 | 2020-08-11 | 中国科学院上海微系统与信息技术研究所 | 基于AlMn合金超导薄膜的TES微量能器及制备方法 |
| US20230031577A1 (en) * | 2021-07-08 | 2023-02-02 | Superq Technologies India Pvt Ltd | Method and systems for fabricating superconducting nanowire single photon detector (snspd) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0262083A (ja) | 1988-08-29 | 1990-03-01 | Canon Inc | ジョセフソン接合の形成方法およびジョセフソン接合素子 |
| DE69211117T2 (de) | 1992-01-28 | 1996-12-12 | Ibm | Flussschlauch-Verankerungsstrukturen für supraleitende Dünnschichten und Methoden ihrer Herstellung |
| JP2747173B2 (ja) | 1992-08-07 | 1998-05-06 | 日本電信電話株式会社 | 酸化物高温超伝導体単結晶薄膜形成方法 |
| EP0612114B1 (en) | 1993-02-15 | 1997-05-14 | Sumitomo Electric Industries, Ltd. | Method for forming a patterned oxide superconductor thin film |
| US5897945A (en) | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
| US6190752B1 (en) | 1997-11-13 | 2001-02-20 | Board Of Trustees Of The Leland Stanford Junior University | Thin films having rock-salt-like structure deposited on amorphous surfaces |
| US8119571B2 (en) | 2006-08-03 | 2012-02-21 | Amit Goyal | High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods |
| JP3622147B2 (ja) * | 2001-06-19 | 2005-02-23 | 独立行政法人産業技術総合研究所 | 柱状ピン止め中心を有する超伝導薄膜及びその製造方法 |
| US20040266628A1 (en) * | 2003-06-27 | 2004-12-30 | Superpower, Inc. | Novel superconducting articles, and methods for forming and using same |
| JP4495426B2 (ja) * | 2003-08-29 | 2010-07-07 | 独立行政法人科学技術振興機構 | 超伝導膜およびその製造方法 |
| WO2006078952A1 (en) * | 2005-01-21 | 2006-07-27 | University Of California | Methods for fabricating a long-range ordered periodic array of nano-features, and articles comprising same |
| JP2006233247A (ja) | 2005-02-23 | 2006-09-07 | Fujikura Ltd | 薄膜形成装置 |
| US8034745B2 (en) * | 2005-08-01 | 2011-10-11 | Amit Goyal | High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods |
| US20070238619A1 (en) * | 2005-09-06 | 2007-10-11 | Superpower, Inc. | Superconductor components |
| AU2008275956A1 (en) | 2007-07-19 | 2009-01-22 | California Institute Of Technology | Structures of ordered arrays of semiconductors |
| JP5017161B2 (ja) | 2008-03-27 | 2012-09-05 | 株式会社東芝 | 酸化物超電導体 |
| US7919435B2 (en) | 2008-09-30 | 2011-04-05 | Ut-Battelle, Llc | Superconductor films with improved flux pinning and reduced AC losses |
-
2010
- 2010-07-27 CN CN201080038345.6A patent/CN102484197B/zh active Active
- 2010-07-27 CA CA2768516A patent/CA2768516C/en active Active
- 2010-07-27 JP JP2012522973A patent/JP5858912B2/ja active Active
- 2010-07-27 CN CN201610511799.XA patent/CN106065474B/zh active Active
- 2010-07-27 EP EP10806895.8A patent/EP2460197B1/en active Active
- 2010-07-27 WO PCT/US2010/043411 patent/WO2011017112A2/en not_active Ceased
- 2010-07-27 IN IN641DEN2012 patent/IN2012DN00641A/en unknown
- 2010-07-27 KR KR1020127003750A patent/KR101485060B1/ko active Active
- 2010-07-27 US US12/844,432 patent/US8926868B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20110028328A1 (en) | 2011-02-03 |
| JP2013501313A (ja) | 2013-01-10 |
| WO2011017112A2 (en) | 2011-02-10 |
| EP2460197A4 (en) | 2014-01-15 |
| CN106065474B (zh) | 2019-05-28 |
| US8926868B2 (en) | 2015-01-06 |
| JP5858912B2 (ja) | 2016-02-10 |
| CA2768516C (en) | 2015-07-14 |
| CN102484197B (zh) | 2016-08-10 |
| CA2768516A1 (en) | 2011-02-10 |
| KR20120051688A (ko) | 2012-05-22 |
| EP2460197A2 (en) | 2012-06-06 |
| CN102484197A (zh) | 2012-05-30 |
| EP2460197B1 (en) | 2016-03-16 |
| WO2011017112A3 (en) | 2011-04-28 |
| KR101485060B1 (ko) | 2015-01-21 |
| CN106065474A (zh) | 2016-11-02 |
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