IN191436B - - Google Patents

Info

Publication number
IN191436B
IN191436B IN755CA1997A IN191436B IN 191436 B IN191436 B IN 191436B IN 755CA1997 A IN755CA1997 A IN 755CA1997A IN 191436 B IN191436 B IN 191436B
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Kamiguchi Yuzo
Saito Akito
Saito Kazuhiro
Fukuzawa Hideaki
Iwasaki Hitoshi
Sahashi Masashi
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of IN191436B publication Critical patent/IN191436B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
IN755CA1997 1996-04-30 1997-04-29 IN191436B (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10906896 1996-04-30

Publications (1)

Publication Number Publication Date
IN191436B true IN191436B (id) 2003-12-06

Family

ID=14500792

Family Applications (1)

Application Number Title Priority Date Filing Date
IN755CA1997 IN191436B (id) 1996-04-30 1997-04-29

Country Status (7)

Country Link
US (2) US5949622A (id)
KR (1) KR100262282B1 (id)
CN (1) CN1083597C (id)
IN (1) IN191436B (id)
MY (1) MY121610A (id)
SG (1) SG47223A1 (id)
TW (1) TW367493B (id)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114863952A (zh) * 2021-02-04 2022-08-05 昭和电工株式会社 磁记录介质、磁记录再生装置及磁记录介质的制造方法

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US6404191B2 (en) * 1997-08-08 2002-06-11 Nve Corporation Read heads in planar monolithic integrated circuit chips
JP3833362B2 (ja) * 1997-10-01 2006-10-11 富士通株式会社 磁気抵抗効果型ヘッド
FR2774774B1 (fr) * 1998-02-11 2000-03-03 Commissariat Energie Atomique Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance
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US6446099B1 (en) 1998-09-30 2002-09-03 Ricoh Co., Ltd. Document matching using structural information
US6542342B1 (en) 1998-11-30 2003-04-01 Nec Corporation Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
US6348274B1 (en) * 1998-12-28 2002-02-19 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic recording apparatus
DE50000341D1 (de) * 1999-02-26 2002-09-05 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung
US6567246B1 (en) * 1999-03-02 2003-05-20 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element
US6219274B1 (en) * 1999-06-08 2001-04-17 Tdk Corporation Ferromagnetic tunnel magnetoresistance effect element and method of producing the same
JP2003505873A (ja) * 1999-07-22 2003-02-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 磁気トンネル接合装置を製造する方法
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US6430013B1 (en) * 1999-12-06 2002-08-06 International Business Machines Corporation Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer
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JP4693292B2 (ja) * 2000-09-11 2011-06-01 株式会社東芝 強磁性トンネル接合素子およびその製造方法
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JP3498737B2 (ja) * 2001-01-24 2004-02-16 ヤマハ株式会社 磁気センサの製造方法
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KR100407907B1 (ko) * 2001-05-15 2003-12-03 한국과학기술연구원 자기 터널 접합 소자의 열처리 방법과 그 방법으로 제조된자기 터널 접합 소자
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JP5032429B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5032430B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
US8648589B2 (en) * 2009-10-16 2014-02-11 HGST Netherlands B.V. Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co2(MnFe)X alloys
US8351151B2 (en) * 2010-11-02 2013-01-08 Hitachi Global Storage Technologies Netherlands B.V. Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip
US9099115B2 (en) * 2013-11-12 2015-08-04 HGST Netherlands B.V. Magnetic sensor with doped ferromagnetic cap and/or underlayer
JP2015179779A (ja) * 2014-03-19 2015-10-08 株式会社東芝 歪検出素子、圧力センサ、マイクロフォン、血圧センサ及びタッチパネル
CN112864309B (zh) * 2019-11-12 2022-11-08 上海磁宇信息科技有限公司 磁性隧道结结构及其磁性随机存储器
CN111996493B (zh) * 2020-07-08 2021-10-15 中国科学院西安光学精密机械研究所 一种提高各向异性磁电阻磁阻率的制备方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114863952A (zh) * 2021-02-04 2022-08-05 昭和电工株式会社 磁记录介质、磁记录再生装置及磁记录介质的制造方法

Also Published As

Publication number Publication date
KR100262282B1 (ko) 2000-10-02
SG47223A1 (en) 1998-03-20
TW367493B (en) 1999-08-21
CN1083597C (zh) 2002-04-24
US6111729A (en) 2000-08-29
MY121610A (en) 2006-02-28
CN1167310A (zh) 1997-12-10
KR970071484A (ko) 1997-11-07
US5949622A (en) 1999-09-07

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