IN189112B - - Google Patents
Info
- Publication number
- IN189112B IN189112B IN985CA1996A IN189112B IN 189112 B IN189112 B IN 189112B IN 985CA1996 A IN985CA1996 A IN 985CA1996A IN 189112 B IN189112 B IN 189112B
- Authority
- IN
- India
Links
Classifications
-
- H10P14/69215—
-
- H10P50/283—
-
- H10W10/0145—
-
- H10W10/041—
-
- H10W10/17—
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- H10W10/40—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19525072A DE19525072C2 (de) | 1995-07-10 | 1995-07-10 | Integrierte Schaltungsanordnung, bei der ein erstes Bauelement an einer Hauptfläche eines Halbleitersubstrats und ein zweites Bauelement am Grabenboden angeordnet sind, und Verfahren zu deren Herstellung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN189112B true IN189112B (OSRAM) | 2002-12-21 |
Family
ID=7766444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN985CA1996 IN189112B (OSRAM) | 1995-07-10 | 1996-05-30 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5990536A (OSRAM) |
| EP (1) | EP0838089B1 (OSRAM) |
| JP (1) | JPH11509043A (OSRAM) |
| KR (1) | KR100418849B1 (OSRAM) |
| CN (1) | CN1093983C (OSRAM) |
| AR (1) | AR002791A1 (OSRAM) |
| DE (2) | DE19525072C2 (OSRAM) |
| IN (1) | IN189112B (OSRAM) |
| WO (1) | WO1997003463A1 (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6218720B1 (en) * | 1998-10-21 | 2001-04-17 | Advanced Micro Devices, Inc. | Semiconductor topography employing a nitrogenated shallow trench isolation structure |
| US7071043B2 (en) * | 2002-08-15 | 2006-07-04 | Micron Technology, Inc. | Methods of forming a field effect transistor having source/drain material over insulative material |
| US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58134445A (ja) * | 1982-02-05 | 1983-08-10 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPS58169934A (ja) * | 1982-03-30 | 1983-10-06 | Fujitsu Ltd | 半導体集積回路装置 |
| JPS61135151A (ja) * | 1984-12-05 | 1986-06-23 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5176789A (en) * | 1985-09-21 | 1993-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for depositing material on depressions |
| JPS6378573A (ja) * | 1986-09-22 | 1988-04-08 | Hitachi Ltd | 半導体装置 |
| US4835584A (en) * | 1986-11-27 | 1989-05-30 | American Telephone And Telegraph Company, At&T Bell Laboratories | Trench transistor |
| DE3809218C2 (de) * | 1987-03-20 | 1994-09-01 | Mitsubishi Electric Corp | Halbleitereinrichtung mit einem Graben und Verfahren zum Herstellen einer solchen Halbleitereinrichtung |
| JPH0620108B2 (ja) * | 1987-03-23 | 1994-03-16 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US4977436A (en) * | 1988-07-25 | 1990-12-11 | Motorola, Inc. | High density DRAM |
| JPH04151850A (ja) * | 1990-10-15 | 1992-05-25 | Nec Corp | 溝絶縁分離型半導体集積回路の製造方法 |
| FR2672731A1 (fr) * | 1991-02-07 | 1992-08-14 | France Telecom | Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant. |
| US5122848A (en) * | 1991-04-08 | 1992-06-16 | Micron Technology, Inc. | Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
| EP0540262A2 (en) * | 1991-10-31 | 1993-05-05 | STMicroelectronics, Inc. | Trench isolation region |
| JPH0637275A (ja) * | 1992-07-13 | 1994-02-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| US5512517A (en) * | 1995-04-25 | 1996-04-30 | International Business Machines Corporation | Self-aligned gate sidewall spacer in a corrugated FET and method of making same |
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1995
- 1995-07-10 DE DE19525072A patent/DE19525072C2/de not_active Expired - Fee Related
-
1996
- 1996-05-30 IN IN985CA1996 patent/IN189112B/en unknown
- 1996-06-24 EP EP96918603A patent/EP0838089B1/de not_active Expired - Lifetime
- 1996-06-24 KR KR1019970708234A patent/KR100418849B1/ko not_active Expired - Fee Related
- 1996-06-24 DE DE59607729T patent/DE59607729D1/de not_active Expired - Lifetime
- 1996-06-24 US US08/981,674 patent/US5990536A/en not_active Expired - Lifetime
- 1996-06-24 CN CN96195393A patent/CN1093983C/zh not_active Expired - Fee Related
- 1996-06-24 JP JP9505399A patent/JPH11509043A/ja not_active Ceased
- 1996-06-24 WO PCT/DE1996/001109 patent/WO1997003463A1/de not_active Ceased
- 1996-07-10 AR ARP960103508A patent/AR002791A1/es unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1190490A (zh) | 1998-08-12 |
| WO1997003463A1 (de) | 1997-01-30 |
| DE59607729D1 (de) | 2001-10-25 |
| DE19525072A1 (de) | 1997-01-16 |
| JPH11509043A (ja) | 1999-08-03 |
| CN1093983C (zh) | 2002-11-06 |
| KR19990014889A (ko) | 1999-02-25 |
| US5990536A (en) | 1999-11-23 |
| AR002791A1 (es) | 1998-04-29 |
| KR100418849B1 (ko) | 2004-04-21 |
| DE19525072C2 (de) | 2002-06-27 |
| EP0838089B1 (de) | 2001-09-19 |
| EP0838089A1 (de) | 1998-04-29 |